Processing device

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

[0001] The present invention relates to a processing device.

2. Description of the Related Art

[0002] Heretofore, in a semiconductor manufacturing process and a liquid crystal device manufacturing process, a heating device which performs heating processing for a substrate such as a semiconductor substrate and a liquid crystal substrate has been used. For example, as shown in Japanese Patent Laid-Open Publication No. 2002-93894, a gas providing passage which provides atmospheric gas to an outer circumference of the heating device is provided in the heating device. The conventional gas providing passage has been formed above a resistance heating body owned by the heating device. Moreover, the conventional gas providing passage has been formed by bonding a ceramic plate of which a surface is formed into a planar shape and a ceramic plate on which a groove rectangular in cross section is formed to each other.

[0003] However, according to the conventional gas providing passage, there has been a problem that a flow of the atmospheric gas in the gas providing passage becomes unstable. Moreover, in some cases, the gas providing passage has been deformed by being heated at the time when the ceramic plates are bonded to each other. There is a possibility that such deformation causes the flow of the atmospheric gas in the gas providing passage to be more unstable, and as a result, it has been difficult to stably provide the gas.

[0004] US A 2003/0136520 describes substrate supports for supporting a substrate during processing. Figs 5 to 7 show a support comprising a ceramic support body having a heater embedded therein. A stem containing a flow passage for the supply of purge gas is coupled to the back surface of the support body. Straight radial grooves and a larger arcuate groove are formed in the back surface of the support body and are closed by a base plate and form passages for flow of purge gas to the periphery of the support body. A passage in the support body leads the purge gas from the stem to the large arcuate groove which is connected to all the radial grooves.

SUMMARY OF THE INVENTION

[0005] It is an object of the present invention to provide a processing device capable of stably providing gas.

[0006] Processing devices according to first and second embodiments of the present invention are set out in claims 1 and 2.

[0007] In the base, linear gas providing passages circular in cross section, which provide gas to an outer circumference of the base, are formed. In these processing devices the cross section of the linear gas providing passages is formed into a circular shape, thus making it possible to stabilize a flow of the gas in the linear gas providing passages. Hence, the processing device can stably provide the gas to the outer circumference of the base.

BRIEF DESCRIPTION OF THE DRAWINGS

[0008] 

FIG. 1B is a plan view of a processing device wich is not an embodiment of the present invention, FIG. 1A is a cross-sectional view of FIG. 1B along a line 1A-1A, and

FIG. 1C is a side view when viewing FIG. 1A from a direction of an arrow C.

FIG. 2A and FIG. 2B are plan views showing linear gas providing passages and coupling passages of processing devices according to the first and second embodiments of the present invention.

FIG. 3 is a partial cross-sectional view of a processing device wich is not an embodiment of the present invention.

FIG. 4 shows the results of an Example.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0009] A processing device shown in FIG. 1A to FIG. 1C is a processing device which holds a processing target and performs a variety of processing on the processing target. The processing device performs heating processing on the processing target. For example, the processing target includes a substrate 2 such as a semiconductor substrate and a liquid crystal substrate. The heating device 1 has a substrate mounting surface 1a, and the substrate 2 is mounted on the substrate mounting surface 1a. Then, the heating device 1 heats the substrate 2 on the substrate mounting surface 1a.

[0010] The heating device 1 includes a base 11, a resistance heating body 12, a tubular member 13, power supply members 14, and insulating pipes 15. The base 11 has the substrate mounting surface 1a, and holds the substrate 2 as the processing target. On the substrate mounting surface 1a, a concave portion (a pocket) for mounting the substrate 2 thereon, a plurality of convex portions (embosses), grooves, and the like, which support the substrate 2, may be formed. A shape of the base 11 is not limited. For example, the base 11 can be formed into a disc-like or polygonal plate shape. It is preferable that a thickness of the base 11 be 30 mm or less. According to this, thermal conductivity of the base 11 can be enhanced, and uniform heating performance of the substrate mounting surface 1a can be enhanced.

[0011] In the base 11, linear gas providing passages 11a which provide gas to an outer circumference of the base 11 are formed. Each linear gas providing passage 11a is connected to the tubular member 13 and provides a gas A introduced from the tubular member 13 to the outer circumference of the base 11. Then, the gas A is emitted from emission holes formed on the outer circumferential surface of the base 11. For example, as shown in FIG. 1A, each linear gas providing passage 11a can provide the gas A from the inside of the base 11 toward the outer circumference of the base 11. For example, each linear gas providing passage 11a can provide atmospheric gas which stabilizes a process in the substrate 2, a reaction gas, and the like. For example, each linear gas providing passage 11a can provide nitrogen gas, argon gas, helium gas, and the like as the atmospheric gas. Each linear gas providing passage 11a has a circular cross-sectional shape, thus making it easy to generate a laminar flow in the linear gas providing passage 11a, and making it possible to stabilize the flow of the gas A. Hence, the heating device 1 can stably provide the gas A to the outer circumference of the base 11. For example, the flow of the gas A each linear gas providing passage 11a can be stabilized, and a loss of such a gas flow can be reduced. Hence, the heating device 1 can stably provide the gas A at a desired flow rate.

[0012] It is preferable that each linear gas providing passage 11a be formed at a position closer to a back surface 1b of the base 11 than to the resistance heating body 12, that is, below the resistance heating body 12 in FIG. 1A. In the conventional heating device, the conventional gas providing passage has been formed above the resistance heating body. Accordingly, a temperature distribution of its substrate mounting surface has been changed by heat communication of the gas flowing in the gas providing passage, and it has been difficult to ensure a uniform heating performance of the substrate mounting surface. As opposed to this, each linear gas providing passage 11a is formed below the resistance heating body 12, thus making it possible to prevent the linear gas providing passage 11a from affecting heat conduction from the resistance heating body 12. Hence, an influence given by each linear gas providing passage 11a to the temperature distribution of the substrate mounting surface 1a can be reduced, and the uniform heating performance of the substrate mounting surface 1a can be enhanced.

[0013] Moreover, it is preferable that each linear gas providing passage 11a be formed by machining. According to this, deformation of each linear gas providing passage 11a can be prevented, and the flow of the gas A in each linear gas providing passage 11a can be stabilized more. Hence, the heating device 1 can provide the gas more stably. For example, the heating device 1 can provide the gas A at a desired flow rate more stably.

[0014] Each linear gas providing passage 11a is formed to reach the outer circumference of the base 11 so as to be capable of providing the gas A to the outer circumference of the base 11. For example, each linear gas providing passage 11a is formed from the center of the base 11 in the radial direction toward the outside thereof in the radial direction. According to this, the flow of the gas A can be stabilized more stably, and the loss of the gas flow can be reduced more.

[0015] It is preferable that a diameter (inner diameter) of each linear gas providing passage 11a be 0.5 to 20 mm. According to this, the flow of the gas in each linear gas providing passage 11a can be stabilized more. Moreover, it is preferable that a length of each linear gas providing passage 11a be 50 to 300 mm. As described above, each linear gas providing passage 11a is formed into a cylindrical shape, and accordingly, the loss of the gas flow can be reduced more.

[0016] In the base 11, the linear gas providing passages 11a and gas coupling passages 11b are formed. Each gas coupling passage 11b couples a linear gas providing passage 11a and a gas introduction passage 13a which is formed in the tubular member 13 and introduces the gas A into the linear gas providing passage 11a to each other. Specifically, on the back surface 1b of the base 11, which is an opposite surface to the substrate mounting surface 1a, through holes serving as the gas coupling passages 11b, through which both of the linear gas providing passages 11a and the gas introduction passages 13a are connected to each other, are formed. Each gas coupling passage 11b couples a gas providing passage 11a and a gas introduction passage 13a to each other, and introduces, to the linear gas providing passage 11a, the gas A provided from the gas introduction passage 13a.

[0017] Moreover, a plurality of linear gas providing passages 11a is formed. In such a way, the gas A of which the flow rate is adjusted can be provided from each providing gas passage 11a. For example, such an adjustment can be performed so that the flow rates of the gas A from all the linear gas providing passages 11a can be substantially the same. According to this, the heating device 1 can provide a substantially uniform amount of the gas A from the plurality of linear gas providing passages 11a. Alternatively, an adjustment can be performed so that the gas flow rate of one linear gas providing passage 11a which provides the gas A to a portion among the outer circumference of the base 11, to which the gas A is desired to be provided concentratedly, can be made larger than those of the other linear gas providing passages 11a. According to this, the heating device 1 can provide the gas A while increasing the flow rate thereof for the target portion more than those for the other portions. Forexample, a diameter, length, surface roughness, and the like of each linear gas providing passage 11a are adjusted, thus making it possible to adjust the gas flow rate from each linear gas providing passage 11a.

[0018] In the case of forming the plurality of linear gas providing passages 11a, for example, as shown in FIG. 1B, two linear gas providing passages 11a can be formed at an interval of 180° along the tangential direction of the base 11. Moreover, as shown in FIG. 2A, three linear gas providing passages 21a to 21c can be formed at an interval of 120°. Furthermore, as shown in FIG. first to fourth linear gas providing passages 31a to 31d can be formed at an interval of 90°. The number of gas providing passages is not limited, and as a matter of course, five or more gas providing passages may be formed. Moreover, the interval among the gas providing passages is not limited to such equal intervals, and may be different intervals.

[0019] As described above, in the case of forming the plurality of linear gas a providing passages, coupling passage which couples the plurality of linear gas providing passages to one another can be formed in the base 11. According to this, the gas A can be distributed to the respective linear gas providing passages. Hence, the heating device 1 can stably provide the gas A at the desired flow rate from the respective linear gas providing passages.

[0020] For example, as shown in FIG. 2A, a coupling passage 21d which couples the plurality of linear gas providing passages 21a to 21c to one another can be formed. Moreover, a plurality of coupling passages can also be formed. For example, as shown in FIG. 2B, a coupling passage 31e which couples the linear gas providing passage 31a and the linear gas providing passage 31b to each other, and a coupling passage 31f which couples the linear gas providing passage 31c and the linear gas providing passage 31d to each other, can be formed.

[0021] The coupling passages 21d, 31e and 31f are formed on the back surface of the base 11. For example, grooves are formed as the coupling passages 21d, 31e and 31f.

[0022] For example, as shown in FIG. 2A, the coupling passage 21d can be formed at a position of being connected to the gas coupling passages 11b. In such a way, the gas A can be introduced into the linear gas providing passages 21a and 21b connected to the gas coupling passages 11b. Moreover, a coupling passage part 11c which connects the coupling passage 21d and a linear gas providing passage 21c which is not connected to a gas coupling passage 11b to each other can be formed on the back surface of the base 11. As the coupling passage part 11c, for example, a through hole connected to both of the linear gas providing passage 21c and the coupling passage 21d can be formed. In such a way, the gas A can also be introduced to the linear gas providing passage 21c which is not connected to a gas coupling passage 11b. For example, as the coupling passage 21d as described above, a the gas coupling circular arc groove which connects passages gas 11b and the coupling passage part 11c to each other can be formed. As the coupling passage, a linear groove may also be formed. By forming the coupling passage 21d into the circular arc groove, the lengths of the respective gas providing passages can be uniformed, and this is preferable.

[0023] 2B, a coupling passage part Alternatively, as shown in FIG. a first coupling passage part 11d which connects the linear gas providing passage 31a and the coupling passage 31e to each other, and a coupling passage part coupling passage 31e to each other, and a second coupling passage part 11e which connects the linear gas providing passage 31b and the coupling passage 31e to each other, can be formed on the back surface of the base 11. For example, as the coupling passage part 11d, a through hole connected to both of the linear gas providing passage 31a and the coupling passage 31e can be formed. As the coupling passage part 11e, a through hole connected to both of the linear gas providing passage 31b and the coupling passage 31e can be formed. As the coupling passage 31e, for example, a circular arc groove which connects the coupling passage part 11d and the coupling passage part 11e to each other can be formed. In this case, the coupling passage 31e is connected to a gas introduction passage 13a of the tubular member 13, and also functions as a coupling passage which couples the linear gas providing passages 31a and 31b and the gas introduction passage 13a to each other in a similar way, a coupling passage part 11f which connects a third coupling passage part 11f which connects the linear gas providing passage 31c and the coupling passage 31f to each other, and a coupling passage part 11g which connects the fourth coupling passage part 11g which connects the linear gas providing passage 31d and the coupling passage 31f to each other, can be formed on the back surface of the base 11. For example, as the coupling passage part 11f, a through hole connected to both of the linear gas providing passage 31c and the coupling passage 31f can be formed. As the coupling passage part 11g, a through hole connected to both of the linear gas providing passage 31d and the coupling passage 31f can be formed. As the coupling passage 31f, for example, a circular arc groove which connects the coupling passage part 11f and the coupling passage part 11g to each other can be formed. In this case, the coupling passage 31f is connected to a gas introduction passage 13a of the tubular member 13, and also functions as a coupling passage which couples the linear gas providing passages 31c and 31d and the gas introduction passage 13a to each other.

[0024] It is preferable to also form the coupling passages 21d, 31e and 31f by the machining described above. It is preferable that the widths of the coupling passages 21d, 31e and 31f (grooves) be 0.5 to 20 mm. The base 11 is formed of ceramics. For example, the base 11 can contain aluminum nitride (AlN), silicon nitride (Si₃N₄), silicon carbide (SiC), alumina (Al₂O₃), sialon (SiAlON), and the like. According to this, the heating device 1 excellent in corrosion resistance and heat resistance can be provided. It is more preferable that the base 11 contains aluminum nitride. According to this, the uniform heating performance of the substrate mounting surface 1a can be enhanced.

[0025] The resistance heating body 12 is formed in the base 11. It is preferable that the resistance heating body 12 be embedded in the base 11. The resistance heating body 12 generates heat upon receiving a supply of electric power, and raises the temperature of the substrate mounting surface 1a. For example, the resistance heating body 12 can be formed of a high melting point material. For example, the resistance heating body 12 can be formed of tungsten, molybdenum, a tungsten-molybdenum alloy, tungsten carbide, molybdenum carbide, or the like. A form of the resistance heating body 12 is not limited, and for example, one formed by printing a printing paste containing high melting point material powder, a linear, coil-like, belt-like bulk body or sheet (foil) of the high melting point material, a thin filmof the highmelting point material, which is formed by CVD or PVD, and the like, can be used. Moreover, a shape of the resistance heating body 12 is not limited, either, and the resistance heating body 12 can be formed into a spiral shape, amesh (wire netting) shape, a punched shape (punching metal), a shape having plural folded portions, and the like.

[0026] As shown in FIG. 1A, the tubular member 13 supports the base 11. Moreover, the tubular member 13 introduces the gas A into the linear gas providing passages 11a of the base 11. Specifically, the tubular member 13 has a plurality of gas introduction passages 13a which introduces the gas A into the linear gas providing passages 11a. Each gas introduction passage 13a communicates with a gas coupling passage 11b of the base 11, and introduces the gas A into a linear gas providing passage 11a through the gas coupling passage 11b. Note that, in the case of forming the linear gas providing passages 31a to 31d shown in FIG. 2B, the gas introduction passages 13a are connected to the coupling passages 31e and 31f of the base 11. For example, each gas introduction passage 13a can be made as a through hole which penetrates from a lower end of the tubular member 13 to an upper end thereof. It is preferable that a diameter of each gas introduction passage 13a be 2 to 10 mm. Moreover, on an inner circumference side of the tubular member 13, the power supply members 14 and the insulating pipes 15 are arranged. The tubular member 13 is bonded to the back surface of the base 11. For example, the tubular member 13 can be bonded to the base 11 by a solid-phase bonding method, a liquid-phase bonding method, and the like, which use a binder. In this case, the base 11 and the tubular member 13 can be integrated together, and air tightness of the gas introduction passages 13a of the tubular member 13 and the linear gas providing passages 11a of the base 11 can be ensured. Alternatively, the tubular member 13 can be bonded to the base 11 by a sealing member such as an O-ring and a metal packing. Also in such a way, the air tightness of the gas introduction passages 13a of the tubular member 13 and the linear gas providing passages 11a of the base 11 can be ensured. Note that the bonding method of the base 11 and the tubular member 13 is not limited to these, and various bonding methods capable of ensuring the air tightness of the gas introduction passages 13a of the tubular member 13 and the linear gas providing passages 11a of the base 11 can be used.

[0027] In a similar way to the base 11, the tubular member 13 can be formed of the ceramics described above. It is preferable that the tubular member 13 be formed of the ceramics of the same type as that of the base 11.

[0028] The power supply members 14 are electrically connected to the resistance heating body 12, and supply the electric power to the resistance heating body 12. The power supply members 14 can be connected to the resistance heating body 12 by brazing, welding, eutectic bonding, crimping, fitting, screwing, and the like. For each power supply member 14, a power supply rod, a power supply line (a power supply wire), a complex of the power supply rod and the power supply line, and the like, can be used. Preferably, the power supply members 14 are formed of metal, more preferably, of nickel. The power supply members 14 are housed in the insulating pipes 15. The insulating pipes 15 are bonded to the back surface of the base 11.

[0029] For example, the heating device 1 can be fabricated in the following manner. Ceramic powders serving as a main component and sintering aids are mixed together, and ceramic raw material powder is prepared. To the ceramic raw material powder, a binder, water, a dispersant, and the like are added and mixed, and a slurry is made. The slurry is granulated by a spray granulation method and the like, and granulated powder is made. By using the granulated powder, a ceramic molded body is fabricated by a die molding method, a CIP method, a slip cast method, or the like. The ceramic molded body is fired under firing conditions (a firing temperature, a firing atmosphere, a firing method, and the like) corresponding to the ceramic raw material powder, and a ceramic sintered body is fabricated.

[0030] The resistance heating body 12 is formed on the ceramic sintered body. For example, the resistance heating body 12 can be formed by printing a printing paste containing the high melting point material powder described above on the ceramic sintered body by using a screen printing method or the like. Alternatively, the resistance heating body 12 can be formed by mounting the bulk body or sheet (foil) of the high melting point material described above on the ceramic sintered body, and by forming the thin film of the high melting point material described above on the ceramic sintered body by CVD or PVD as described above. Next, another ceramic molded body is formed on the ceramic sintered body and the resistance heating body 12. For example, the ceramic sintered body on which the resistance heating body 12 is formed is set in a metal mold or the like, and the granulated powder described above is filled onto the ceramic sintered body and the resistance heating body 12, thus making it possible to form the another ceramic molded body. Alternatively, the another ceramic molded body may be fabricated by using the granulated powder described above by the die molding method, the CIP method, the slip cast method, or the like as described above, and the another ceramic molded body may be mounted and pressed on the ceramic sintered body and the resistance heating body 12.

[0031] Then, the ceramic sintered body, the resistance heating body 12, and the another ceramic molded body are fired integrally according to the firing conditions corresponding to the ceramic raw material powder. In such a way, the base 11 in which the resistance heating body 12 is embedded can be fabricated. For example, the above-described bodies can be fired while being pressurized in one axial direction by using a hot press method or the like.

[0032] Note that a temporarily fired body of the ceramics described above may be fabricated in place of the ceramic sintered body, and that the resistance heating body 12 may be formed on the temporarily fired body of the ceramics described above. Alternatively, a laminated body of the ceramic sintered body, the resistance heating body 12, and the another ceramic molded body may be fabricated, and the laminated body may be fired integrally by the hot press method or the like as described above.

[0033] The linear gas providing passages 11a are formed in the obtained base 11 by the machining described above. For example, the linear gas providing passages 11a are formed in the base 11 from the outside of the base 11 in the radial direction toward the inside thereof in the radial direction by a drilling process using a machining center (MC) and the like. Moreover, holes for the gas coupling passages 11b and holes for inserting the power supply members 14 into the base 11 are formed therein by the process.

[0034] Separately from the base 11, yet another ceramic molded body serving as the tubular member 13 is fabricated by using granulated powder prepared in a similar way thereto by the die molding method, the CIP method, the slip cast method, or the like as described above. Then, the yet another ceramic molded body is fired under the firing conditions corresponding to the ceramic raw material powder described above, and the tubular member 13 is fabricated. The gas introduction passages 13a are formed by the machining described above in the obtained tubular member 13.

[0035] Then, the base 11 and the tubular member 13 are bonded to each other. At this time, the base 11 and the tubular member 13 are bonded to each other so that the gas coupling passages 11b and the gas introduction passages 13a can be fitted to each other. The base 11 and the tubular member 13 can be bonded to each other by the solid-phase bonding method and the liquid-phase bonding method, which use the binder, and by seal bonding using the O-ring, the metal packing, and the like as described above. Moreover, the insulating pipes 15 are inserted into the tubular member 13, and the base 11 and the insulating pipes 15 are also bonded to each other in a similar way to that described above. Finally, the power supply members 14 are inserted into the insulating pipes 15, and are electrically connected to the resistance heating body 12.

[0036] Note that the present invention is not limited to the above-described embodiments. For example, the gas providing passages just need to be formed to reach the outer circumference of the base 11 so as to be capable of providing the gas A to the outer circumference of the base 11. As shown in FIG. 3 (not an embodiment of the invention), gas providing passages 41a may also be formed from the inside of the outer circumference of the base 11 toward the substrate mounting surface 1a thereof.

[0037] Specifically, each gas providing passage 41a is formed into what is substantially an L shape in cross section, which has a first passage 41b extended from the inside of the base 11 in the radial direction toward the outside thereof in the radial direction, and a second passage 41c extended from the inside of the outer circumference of the base 11 toward the substrate mounting surface 1a thereof. The gas providing passages 41a as described above can be formed in the following manner. First, as shown in FIG. 3, the first passages 41b (lateral holes) are formed by the machining described above from a side surface of the base 11 toward the inside thereof in the radial direction. Next, from an upper surface of the base 11 in the vicinity of the outer circumference of the base 11, the second passages 41c (longitudinal holes) connected to the first passages 41b are formed by the machining described above. Then, ends of the first passages 41b (lateral holes) on the side surface of the base 11 are closed by sealing members 41d. Specifically, the sealing members 41d which are formed of the ceramics described above and are fitted into the holes formed in the side surface of the base 11 are fixed by brazing, crimping, screwing, and the like.

[0038] Alternatively, the resistance heating body 12 may be provided on the surface of the base 11 without being embedded in the inside of the base 11. Moreover, the heating device 1 can include an electrostatic electrode which generates electrostatic adsorption force, or a high-frequency electrode which excites the reaction gas described above. Specifically, the electrostatic electrode or the high-frequency electrode can be embedded in the base 11. Moreover, as a processing device, a plasma processing device which performs plasma processing on the substrate 2, a sputter processing device which performs sputter processing thereon, and the like, can be used besides the heating device 1.

EXAMPLES

[0039] Next, the present invention will be specifically described through an example.

[Example of the Present Invention]

[0040] 95 wt% aluminum nitride powder and 5 wt% yttrium oxide powder (sintering aid) were mixed together, and a ceramic raw material powder was thus prepared. Binder (PVA), water, and dispersant were added to the ceramic raw material powder. These components were mixed together by using a ball mill, and a slurry was thus made. The slurry was sprayed and dried by using a spray dryer, and a granulated powder was thus made. By using the granulated powder, an aluminum nitride molded body was fabricated by a die molding method. The aluminum nitride molded body was fired at 1900°C in a nitrogen gas atmosphere by using a hot press method, and an aluminum nitride sintered body was thus fabricated.

[0041] Next, ethyl cellulose was mixed as a binder into mixed powder of 80 wt% tungsten carbide and 20 wt% aluminum nitride powder, and a printing paste was thus prepared. The resistance heating body 12 was formed on the aluminum nitride sintered body by a screen printing method using this printing paste, followed by drying.

[0042] Next, the aluminum nitride sintered body on which the resistance heating body 12 was formed was set in a metal mold, and the granulated powder described above was filled onto the aluminumnitride sintered body and the resistance heating body 12, followed by pressurization, and another aluminum nitride molded body on the aluminum nitride sintered body and the resistance heating body 12 was thus fabricated. Then, the aluminum nitride sintered body, the resistance heating body 12, and the another aluminum nitride molded body were set in a carbon-made sheath, and were fired at 1900°C in a nitrogen gas atmosphere by using a hot press method.

[0043] In such a way, the base 11 of another aluminum nitride sintered body with a diameter of 330 mm and a thickness of 25 mm was fabricated. The linear gas providing passages 31a to 31d, the coupling passages 31e and 31f, and the coupling passage parts 11d to 11g, which are 25 mm was fabricated. The gas providing passages 31a to 31d shown in FIG. 2B, were formed in the base 11 by machining using a machining center (MC). Specifically, four linear gas providing passages 31a to 31d were formed by the process described above from the side surface of the base 11 toward the inside thereof in the radial direction at an interval of 90° along the tangential direction of the base 11. Diameters (Ø) of the respective linear gas providing passages 31a to 31d were set at 4mm, and lengths thereof were set at 135 mm. Moreover, two circular arc coupling passages 31e and 31f (grooves) were formed on the back surface of the base 11 . Widths of the respective coupling passages 31e and 31f were set at 5mm, depths thereof were set at 2 mm, and circular arc diameters (PCD) thereof were set at 60 mm. Moreover, the holes for inserting the power supply members 14 into the base 11 were formed therein by the process described above.

[0044] Moreover, a tubular aluminum nitride molded body was fabricated by a CIP method using granulated powder similar to that described above. Then, the tubular aluminum nitride molded body was fired at 1900°C in a nitrogen gas atmosphere by a normal pressure firing method. In such a way, the tubular member 13 of yet another aluminum nitride sintered body with a diameter of 30 mm and a length of 250 mm was fabricated. As the gas introduction passages 13a, two through holes with a diameter (Ø) of 5 mm were formed in the tubular member 13 by machining using a machining center (MC).

[0045] The base 11 and the tubular member 13 were bonded to each other so that centers of the coupling passages 31e and 31f formed on the base 11 and the gas introduction passages 13a of the tubular member 13 could be fitted to each other. In such a way, the gas introduction passages 13a and the linear gas providing passages 31a to 31d were connected to each other through the coupling passages 31e and 31f. Specifically, a binder was coated on the back surface of the base 11 and an end surface of the tubular member 13, and the base 11 and the tubular member 13 were subjected to a heat treatment at 1850°C, and thus were bonded to each other by a solid-phase bonding method. In a similar way thereto, the base 11 and the insulating pipes 15 were also bonded to each other. Finally, power supply rods made of nickel were inserted as the power supply members 14 into the insulating pipes 15, and were bonded to the resistance heating body 12 by brazing. A heating device 1 according to the Example of the Present Invention was fabricated in the above-described manner. Nitrogen gas was provided as atmospheric gas at 20 sccm (standard cc/min) to the respective gas introduction passages 13a of the tubular member 13 of the obtained heating device 1. Then, flow rates of the gas provided from the respective linear gas providing passages 31a to 31d of the base 11 to the outer circumference of the base 11 were measured by using a flowmeter.

[0046] The flow rate of the gas from the linear gas providing passage 31a was 9.7 sccm, the flow rate of the gas from the linear gas providing passage 31b was 9.2 sccm, the flow rate of the gas from the linear gas providing passage 31c was 9.3 sccm, and the flow rate of the gas from the linear gas providing passage 31d was 9.6 sccm. Variation of the flow rates of the gas from the respective linear gas providing passages 31a to 31d was thus suppressed to be as extremely small as 1 sccm or less, and the atmospheric gas was therefore able to be stably provided to the outer circumference of the base 11.

[Comparative Example]

[0047] Subsequently, a heating device according to a Comparative Example was fabricated. Basically, the heating device according to the Comparative Example was fabricated of materials by a procedure, both of which were similar to those of the heating device according to the Example of the Present Invention. However, gas providing passages in a base were formed by coupling two plate materials, one of which has grooves on a surface thereof, to each other. Specifically, two disc-like plates were fabricated, rectangular grooves were extended along the radial direction on a surface of one of the plates, and the plate having the rectangular grooves formed thereon and the other plate of which a surface was formed into a planar shape were coupled to each other. In such a way, the gas providing passages each having a rectangular shape in cross section with a width of 6 mm and a height of 2 mm were formed. Note that a diameter and thickness of the base and a length, number, and arrangement of the gas providing passages were set similar to those of the Example of the Present Invention. Nitrogen gas was provided as atmospheric gas at 20 sccm (standard cc/min) to the respective gas introduction passages of a tubular member of the heating device thus obtained. Then, flow rates of the gas provided from the respective gas providing passages of the base to an outer circumference of the base were measured by using a flowmeter.

[0048] As shown in FIG. 4, the flow rates of the gas from the gas providing passages were 7.3 sccm, 8.3 sccm, 6.8 sccm, and 9.4 sccm. As described above, variation of the flow rates of the gas according to the Comparative Example was 2.6 sccm, which was double or more the variation according to the Example of the Present Invention.

[0049] Note that, in addition to the variation of the flow rates of the gas, which was described above, variation of uniform heating performance on a surface of the base was also verified. The members to be heated were housed in a vacuum atmosphere, and differences among surface temperatures of plural spots of each thereof when an average value of the temperatures on the surface of the base of each member to be heated reached 500°C were measured by using an infrared radiometer. As shown in FIG. 4, a difference between the maximum value and the minimum value in the temperature on the surface of the base according to the Example of the Present Invention was 5.3°C, and a difference between the maximum value and the minimum value in the temperature on the surface of the base according to the Comparative Example was 12.3°C. As described above, the temperature difference in the Example of the Present Invention became half that or less of the temperature difference in the Comparative Example, and it was therefore found that the Example of the Present Invention was more excellent in uniform heating performance.

[0050] Moreover, in the case of the Comparative Example, a temperature of the surface of the base, which corresponded to the portions of the base where the gas providing passages were formed, became lower than a temperature of the portions of the base where the gas providing passages were not formed. However, in the case of the Example of the Present Invention, such temperature lowering did not occur.

Claims

1. A processing device, comprising:

(a) a base (11) for holding a processing target,
wherein said base (11) is a ceramic body providing a substrate mounting surface (1a) for mounting of the processing target thereon, a back surface (1b) on its opposite side from said substrate mounting surface (1a), and an outer circumferential surface connecting said substrate mounting surface (1a) to said back surface (1b), and
said base (11) has a plurality of linear gas-providing passages (21a, 21b, 21c) formed in said base (11), each of said plurality of linear gas-providing passages (21a, 21b, 21c) being connected to an end opening at said outer circumferential surface of said base (11) and having a circular cross section which is surrounded by material of said ceramic body; and

(b) a tubular member (13) bonded to said back surface (1b) of said base (11), wherein said tubular member (13) has a plurality of gas introduction passages (13a) ;
wherein each of said plurality of gas introduction passages (13a) is connected through a gas coupling passage (11b) formed at said back surface (1b) of said base (11) to a linear gas-providing passage (21a, 21b) of said plurality of linear gas-providing passages (21a, 21b, 21c) for supply of gas thereto; wherein said plurality of linear gas-providing passages (21a, 21b, 21c) is connected to a coupling passage (21d) which couples said plurality of linear gas-providing (21a, 21b, 21c) to each other, said coupling passage (21d) being a groove formed in said back surface (1b) of said base (11); and wherein each linear gas-providing passage (21a, 21b) of said plurality of linear gas-providing passages (21a, 21b, 21c) which is connected to a gas coupling passage (11b) is connected to said coupling passage (21d) through said gas coupling passage (11b) and each linear gas-providing passage (21c) of said plurality of linear gas-providing passages (21a, 21b, 21c) which is not connected to a gas coupling passage (11b) is connected to said coupling passage (21d) through a coupling passage part (11c).

2. A processing device, comprising:

(a) a base (11) for holding a processing target, wherein said base (11) is a ceramic body providing a substrate mounting surface (1a) for mounting of the processing target thereon, a back surface (1b) on its opposite side from said substrate mounting surface (1a), and an outer circumferential surface connecting said substrate mounting surface (1a) to said back surface (1b), and said base (11) has a plurality of linear gas-providing passages (31a, 31b, 31c, 31d) formed in said base (11), each of said plurality of linear gas-providing passages (31a, 31b, 31c, 31d) being connected to an end opening at said outer circumferential surface of said base (11) and having a circular cross section which is surrounded by material of said ceramic body; and

(b) a tubular member (13) bonded to said back surface (1b) of said base (11), wherein said tubular member (13) has a plurality of gas introduction passages (13a) ; wherein each of said plurality of gas introduction passages (13a) is connected through a coupling passage (31e, 31f) formed at said back surface (1b) of said base (11) to linear gas-providing passages (31a, 31b; 31c, 31d) of said plurality of linear gas-providing passages (31a, 31b, 31c, 31d) for supply of gas thereto; wherein said plurality of linear gas-providing passages (31a, 31b, 31c, 31d) is connected to said coupling passages (31e, 31f) which couple said linear gas-providing passages (31a, 31b; 31c, 31d) of said plurality of linear gas-providing passages (31a, 31b, 31c, 31d) to each other, said coupling passages (31e, 31f) each being a groove formed in said back surface (1b) of said base (11); and wherein each linear gas-providing passage (31a, 31b, 31c, 31d) of said plurality of linear gas-providing passages (31a, 31b, 31c, 31d) is connected to said coupling passages (31e, 31f) through a coupling passage part (11d, 11e, 11f, 11g).

3. The processing device according to claim 1 or 2, further comprising a resistance heating body (12) in said base (11).

4. The processing device according to claim 3, wherein said plurality of linear gas-providing passages (21a, 21b, 21c; 31a, 31b, 31c, 31d) is formed closer to said back surface (1b) of said base (11) than to said resistance heating body (12).

5. The processing device according to any one of claims 1 to 4, wherein each of said plurality of linear gas-providing passages (21a, 21b, 21c; 31a, 31b, 31c, 31d) is formed by machining.

Ansprüche

1. Verarbeitungsvorrichtung, umfassend:

(a) eine Basis (11) zum Halten eines Verarbeitungszielobjekts, wobei die Basis (11) ein Keramikkörper ist, der eine Substratanbringungsfläche (1a) zum Anbringen des Verarbeitungszielobjekts auf derselben, eine Rückfläche (1b) auf der zur Substratanbringungsfläche (1 a) entgegengesetzten Seite und eine Außenumfangsfläche bereitstellt, die die Substratanbringungsfläche (1a) mit der Rückfläche (1 b) verbindet, und wobei
die Basis (11) eine Vielzahl von linearen Gasbereitstellungsdurchlässen (21 a, 21 b, 21 c) umfasst, die in der Basis (11) ausgebildet sind, wobei
jeder der Vielzahl von linearen Gasbereitstellungsdurchlässen (21 a, 21 b, 21 c) mit einer Endöffnung auf der Außenumfangsfläche der Basis (11) verbunden ist und einen kreisförmigen Querschnitt aufweist, der von Material des Keramikkörpers umgeben ist; und

(b) ein rohrförmiges Element (13), das mit der Rückfläche (1 b) der Basis (11) haftschlüssig verbunden ist, wobei das rohrförmige Element (13) eine Vielzahl von Gaseinbringungsdurchlässen (13a) aufweist; wobei
jeder der Vielzahl von Gaseinbringungsdurchlässen (13a) durch einen Gaskopplungsdurchlass (11b), der auf der Rückfläche (1b) der Basis (11) ausgebildet ist, mit einem linearen Gasbereitstellungsdurchlass (21 a, 21 b) der Vielzahl von linearen Gasbereitstellungsdurchlässen (21 a, 21 b, 21 c) verbunden ist, um diesem Gas zuzuführen; wobei
die Vielzahl von linearen Gasbereitstellungsdurchlässen (21 a, 21 b, 21 c) mit einem Kopplungsdurchlass (21 d), der die Vielzahl von linearen Gasbereitstellungsdurchlässen (21 a, 21 b, 21 c) miteinander koppelt, verbunden ist, wobei der Kopplungsdurchlass (21 d) eine auf der Rückfläche (1b) der Basis (11) ausgebildete Vertiefung ist, und wobei
jeder lineare Gasbereitstellungsdurchlass (21 a, 21 b) der Vielzahl von linearen Gasbereitstellungsdurchlässen (21 a, 21 b, 21 c), der mit einem Gaskopplungsdurchlass (11b) verbunden ist, mit dem Kopplungsdurchlass (21 d) über den Gaskopplungsdurchlass (11b) verbunden ist, und wobei jeder lineare Gasbereitstellungsdurchlass (21 c) der Vielzahl von linearen Gasbereitstellungsdurchlässen (21 a, 21 b, 21 c), der nicht mit einem Gaskopplungsdurchlass (11b) verbunden ist, mit dem Kopplungsdurchlass (21 d) über einen Kopplungsdurchlassteil (11 c) verbunden ist.

2. Verarbeitungsvorrichtung, umfassend:

(a) eine Basis (11) zum Halten eines Verarbeitungszielobjekts, wobei die Basis (11) ein Keramikkörper ist, der eine Substratanbringungsfläche (1a) zum Anbringen des Verarbeitungszielobjekts auf derselben, eine Rückfläche (1b) auf der zur Substratanbringungsfläche (1 a) entgegengesetzten Seite und eine Außenumfangsfläche bereitstellt, die die Substratanbringungsfläche (1a) mit der Rückfläche (1 b) verbindet, und wobei
die Basis (11) eine Vielzahl von linearen Gasbereitstellungsdurchlässen (31 a, 31 b, 31 c) umfasst, die in der Basis (11) ausgebildet sind, wobei
jeder der Vielzahl von linearen Gasbereitstellungsdurchlässen (31 a, 31 b, 31 c) mit einer Endöffnung auf der Außenumfangsfläche der Basis (11) verbunden ist und einen kreisförmigen Querschnitt aufweist, der von Material des Keramikkörpers umgeben ist; und

(b) ein rohrförmiges Element (13), das mit der Rückfläche (1 b) der Basis (11) haftschlüssig verbunden ist, wobei das rohrförmige Element (13) eine Vielzahl von Gaseinbringungsdurchlässen (13a) aufweist; wobei
jeder der Vielzahl von Gaseinbringungsdurchlässen (13a) über einen Kopplungsdurchlass (31 e, 31 f), der auf der Rückfläche (1b) der Basis (11) ausgebildet ist, mit linearen Gasbereitstellungsdurchlässen (31 a, 31 b; 31 c, 31 d) der Vielzahl von linearen Gasbereitstellungsdurchlässen (31 a, 31 b, 31 c, 31 d) verbunden ist, um diesen Gas zuzuführen; wobei
die Vielzahl von linearen Gasbereitstellungsdurchlässen (31 a, 31 b, 31 c, 31 d) mit den Kopplungsdurchlässen (31 e, 31 f) verbunden ist, die die linearen Gasbereitstellungsdurchlässe (31 a, 31 b, 31 c, 31d) der Vielzahl von linearen Gasbereitstellungsdurchlässen (31 a, 31 b, 31 c, 31 d) miteinander koppeln, wobei die Kopplungsdurchlässe (31 e, 31 f) jeweils in der Rückfläche (1b) der Basis (11) ausgebildete Vertiefungen sind; und wobei
jeder lineare Gasbereitstellungsdurchlass (31 a, 31 b, 31 c, 31 d) der Vielzahl von linearen Gasbereitstellungsdurchlässen (31 a, 31 b, 31 c, 31 d) mit den Kopplungsdurchlässen (31 e, 31 f) über einen Kopplungsdurchlassteil (11 d, 11 e, 11 f, 11 g) verbunden ist.

3. Verarbeitungsvorrichtung nach Anspruch 1 oder 2, ferner umfassend einen Widerstandsheizkörper (12) in der Basis (11).

4. Verarbeitungsvorrichtung nach Anspruch 3, wobei die Vielzahl von linearen Gasbereitstellungsdurchlässen (21a, 21b, 21c; 31a, 31b, 31c, 31 d) näher bei der Rückfläche (1b) der Basis (11) als bei dem Widerstandsheizkörper (12) ausgebildet ist.

5. Verarbeitungsvorrichtung nach einem der Ansprüche 1 bis 4, wobei jeder der Vielzahl von linearen Gasbereitstellungsdurchlässen (21 a, 21 b, 21 c; 31 a, 31 b, 31 c, 31 d) durch maschinelle Bearbeitung ausgebildet ist.

Revendications

1. Dispositif de traitement, comprenant :

(a) une base (11) pour supporter une cible de traitement,
dans lequel ladite base (11) est un corps en céramique fournissant une surface de montage de substrat (1a) pour le montage de la cible de traitement sur celle-ci, une surface arrière (1b) du côté de celle-ci opposé à ladite surface de montage de substrat (1a), et une surface circonférentielle extérieure reliant ladite surface de montage de substrat (1a) à ladite surface arrière (1b), et
ladite base (11) comporte une pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c) formés dans ladite base (11), chacun de ladite pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c) étant relié à une ouverture d'extrémité au niveau de ladite surface circonférentielle extérieure de ladite base (11) et ayant une section transversale circulaire qui est entourée par le matériau dudit corps en céramique ; et

(b) un élément tubulaire (13) lié à ladite surface arrière (1b) de ladite base (11), dans lequel ledit élément tubulaire (13) comporte une pluralité de passages d'introduction de gaz (13a) ;
dans lequel chacun de ladite pluralité de passages d'introduction de gaz (13a) est relié, par l'intermédiaire d'un passage d'accouplement de gaz (11b) formé au niveau de ladite surface arrière (1b) de ladite base (11), à un passage de fourniture de gaz linéaire (21a, 21b) de ladite pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c) pour la fourniture de gaz à celle-ci ; dans lequel ladite pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c) sont reliés à un passage d'accouplement (21d) qui accouple ladite pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c) les uns aux autres, ledit passage d'accouplement (21d) consistant en une rainure formée dans ladite surface arrière (1b) de ladite base (11) ; et dans lequel chaque passage de fourniture de gaz linéaire (21a, 21b) de ladite pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c) qui sont reliés à un passage d'accouplement de gaz (11b) est relié au dit passage d'accouplement (21d) par l'intermédiaire dudit passage d'accouplement de gaz (11b) et chaque passage de fourniture de gaz linéaire (21c) de ladite pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c) qui ne sont pas reliés à un passage d'accouplement de gaz (11b) est relié au dit passage d'accouplement (21d) par l'intermédiaire d'une partie de passage d'accouplement (11c).

2. Dispositif de traitement, comprenant :

(a) une base (11) pour supporter une cible de traitement, dans lequel ladite base (11) est un corps en céramique fournissant une surface de montage de substrat (1a) pour le montage de la cible de traitement sur celle-ci, une surface arrière (1b) du côté de celle-ci opposé à ladite surface de montage de substrat (1a), et une surface circonférentielle extérieure reliant ladite surface de montage de substrat (1a) à ladite surface arrière (1b), et
ladite base (11) comporte une pluralité de passages de fourniture de gaz linéaires (31a, 31b, 31c, 31d) formés dans ladite base (11), chacun de ladite pluralité de passages de fourniture de gaz linéaires (31a, 31b, 31c, 31d) étant relié à une ouverture d'extrémité au niveau de ladite surface circonférentielle extérieure de ladite base (11) et ayant une section transversale circulaire qui est entourée par le matériau dudit corps en céramique ; et

(b) un élément tubulaire (13) lié à ladite surface arrière (1b) de ladite base (11), dans lequel ledit élément tubulaire (13) comporte une pluralité de passages d'introduction de gaz (13a) ;
dans lequel chacun de ladite pluralité de passages d'introduction de gaz (13a) est relié, par l'intermédiaire d'un passage d'accouplement (31e, 31f) formé au niveau de ladite surface arrière (1b) de ladite base (11), à des passages de fourniture de gaz linéaires (31a, 31b ; 31c, 31d) de ladite pluralité de passages de fourniture de gaz linéaires (31a, 31b, 31c, 31d) pour la fourniture de gaz à celle-ci ;
dans lequel ladite pluralité de passages de fourniture de gaz linéaires (31a, 31b, 31c, 31d) est relié aux dits passages d'accouplement (31e, 31f) qui accouplent lesdits passages de fourniture de gaz linéaires (31a, 31b ; 31c, 31d) de ladite pluralité de passages de fourniture de gaz linéaires (31a, 31b, 31c, 31d) les uns aux autres, lesdits passages d'accouplement (31e, 31f) consistant chacun en une rainure formée dans ladite surface arrière (1b) de ladite base (11) ; et
dans lequel chaque passage de fourniture de gaz linéaire (31a, 31b, 31c, 31d) de ladite pluralité de passages de fourniture de gaz linéaires (31a, 31b, 31c, 31d) est relié aux dits passages d'accouplement (31e, 31f) par l'intermédiaire d'une partie de passage d'accouplement (11d, 11e, 11f, 11g).

3. Dispositif de traitement selon la revendication 1 ou 2, comprenant en outre un corps chauffant résistif (12) dans ladite base (11).

4. Dispositif de traitement selon la revendication 3, dans lequel ladite pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c ; 31a, 31b, 31c, 31d) sont formés plus près de ladite surface arrière (1b) de ladite base (11) que du corps chauffant résistif (12).

5. Dispositif de traitement selon l'une quelconque des revendications 1 à 4, dans lequel chacun de ladite pluralité de passages de fourniture de gaz linéaires (21a, 21b, 21c ; 31a, 31b, 31c, 31d) est formé par usinage.

Drawing