Technical Field
[0001] The present invention relates to an electron-emitting apparatus comprising an element
having an emitter section made of a dielectric material, a lower electrode disposed
below the emitter section, and an upper electrode disposed above the emitter section
and an electron-emitting method using the element.
Background Art
[0002] Conventionally, an electron-emitting apparatus is known that comprises an electron-emitting
element including an emitter section made of a dielectric material, a lower electrode
(lower electrode layer) disposed below the emitter section, and an upper electrode
(upper electrode layer) disposed above the emitter section and having numerous micro
through holes. In the electron-emitting apparatus, a drive voltage is applied between
the upper electrode and the lower electrode to reverse the polarization of the dielectric
material and to thereby emit electrons through the micro through holes in the upper
electrode (e.g., refer to
Japanese Unexamined Patent Application Publication No. 2005-183361).
[0003] In the electron-emitting device, upon setting the potential of the upper electrode
relative to (or with respect to) the potential of the lower electrode (i.e., the potential
difference between the lower electrode and the upper electrode with the potential
of the lower electrode as the reference, hereinafter, also referred to as "element
voltage") to a negative voltage whose absolute value is larger than a predetermined
level, electrons are supplied from the upper electrode to the emitter section, thus
to accumulate the electrons in (on) the emitter section. Further, upon setting the
element voltage to a positive voltage whose absolute value is larger than another
predetermined level when electrons have been accumulated in the emitter section, the
electrons accumulated in the emitter section are emitted in the upward direction of
the upper electrode via the micro through holes.
[0004] Specifically, referring to Fig. 29, a drive voltage Vin applied between the upper
electrode and the lower electrode is set at the negative voltage Vm1 during a charge
accumulation period Td. Thus, the electrons are accumulated in the emitter portion.
Subsequently, the drive voltage Vin is changed to set the element voltage at the positive
voltage Vp1 during an electron-emission period Th. Thus, as shown by current Ph of
emitted electrons in Fig. 29, the electrons accumulated in the emitter section are
emitted in the upward direction of the upper electrode.
Summary of the Invention
[0005] The above-mentioned electron-emitting apparatus is used as a display, a backlight
of a liquid crystal screen, or, various electron-emitting sources. Therefore, it is
preferable that the amount of emitted electrons (e.g., the amount expressed as an
area S1 shaded in Fig. 29, and referred to as "the total amount of electron emission"
or "electron emission total amount" in this specification) be large during a predetermined
period T.
[0006] In order to increase the amount of emitted electrons (electron emission total amount)
within the predetermined period T, the charge accumulation period Td and electron-emission
period Th are set to be short, thereby increasing the number of electron-emitting
times during the predetermined period T, as shown in Fig. 30. However, according to
this method, polarization reversal times of the electron-emitting element are increased
(i.e., the polarization reversal occurs frequently), and therefore, the lifetime of
the electron emitting element may be reduced (shortened).
[0007] On the other hand, as shown in Fig. 31, in order to increase the amount of emitted
electrons within the predetermined period T, the negative voltage may be changed from
Vm1 to Vm2 (|Vm2|>|Vm1|) to increase the amount of accumulated electrons once (i.e.,
per one accumulation operation). Further, the positive voltage may be changed from
Vp1 to Vp2 (|Vp2|>|Vp1|) to increase the amount of emitted electrons per one emission
operation (expressed by an area S2 corresponding to a shaded portion in Fig. 31).
However, according to this method, a peak value Pk2 of the current of emitted electrons
shown in Fig. 31 is larger than a peak value Pk1 shown in Fig. 29. Thus, as will be
obviously understood, a larger amount of electrons are emitted within a short time
period (per one operation for emitting electrons). As a result, inrush current flows
through the electron-emitting element, thereby to generate a large amount of heat.
Thus, the element may be deteriorated.
[0008] Moreover, an electron-emitting apparatus which operates as illustrated in Fig.31
is not a preferable one if the "target of electron irradiation" such as a phosphor,
onto which electrons emitted from an electron-emitting element is irradiated, has
a tendency to degrade in its characteristic due to an excessive amount of electron
irradiation for a given period of time, and/or due to continuous electron irradiation
for a long period of time.
[0009] The present invention is devised to solve the above-mentioned problems. It is one
of objects of the present invention to provide an electron-emitting apparatus having
a long lifetime and capable of emitting a large total amount of electrons, and an
electron-emitting method by which the total amount of emitted electrons is increased
while avoiding the shortening the lifetime of the electron-emitting element.
[0010] In order to attain the above-mentioned object, an electron-emitting apparatus according
to the present invention comprises an element (an electron-emitting element) including:
an emitter section made of a dielectric material; a lower electrode disposed below
the emitter section; and an upper electrode disposed above the emitter section to
oppose the lower electrode with the emitter section sandwiched therebetween, the upper
electrode having a plurality of micro through holes and formed in such a manner that
its surface around the circumference of the micro through holes facing the emitter
section is apart from the emitter section.
[0011] The element supplies electrons to the emitter section from the upper electrode and
accumulates the electrons in the emitter section, when an element voltage (said element
voltage), as a potential of the upper electrode relative to a potential of the lower
electrode, is a negative voltage whose absolute value is larger than a predetermined
level. Further, the element emits the electrons accumulated in the emitter section
via the micro through holes when the element voltage is a positive voltage whose absolute
value is larger than another predetermined level while (if) the electrons are (have
been) accumulated (i.e., stored or held) in the emitter section.
[0012] Furthermore, the electron-emitting apparatus according to the present invention comprises
drive voltage applying means for applying a drive voltage between the upper electrode
and the lower electrode to set the element voltage at the negative voltage and thereafter
to set the element voltage at the positive voltage. The drive voltage applying means
increases the positive voltage stepwise (for example, refer to Fig. 15 and Fig. 18).
[0013] Thus, upon setting the element voltage at the negative voltage, electrons are accumulated
in the emitter section. Then, the accumulated electrons are (gradually) emitted every
time the element voltage is increased stepwise.
[0014] In other words, the electrons which were (have been) accumulated in the emitter section
by one electron-accumulation operation are emitted via the micro through holes of
the upper electrode a plurality of times (the electrons are emitted a plurality of
times by a divided amount). Therefore, even if the level of the negative voltage is
(is set) larger and thus a large amount of electrons are accumulated in the emitter
section (e.g., in the case of setting the negative voltage at the voltage Vm2), the
amount of emitted electrons per a single electron-emission operation (i.e., per each
emission) is smaller than that in the conventional case shown in Fig. 31 (that is,
for example, the peak value Pk3 of the current of emitted electrons illustrated in
Fig. 15 is smaller than the peak value Pk2 of the current of emitted electrons of
Fig. 31). As a result, since the large inrush current flowing locally through the
electron-emitting element is avoided, the deterioration in the element due to the
heating is prevented and the amount of emitted electrons (electron emission total
amount) for the predetermined period T is increased. Further, the dipoles in the emitter
section rotate only once during a period from the one (once) electron-accumulation
to the emission of electrons accumulated by the electron accumulation. Therefore,
since the number of times for polarization reversal of the dipoles is not increased,
the deterioration in the element is suppressed.
[0015] In addition to that, compared with a case where a large positive voltage is applied
to the element immediately after electron accumulation, it is possible to relatively
reduce the number of dipoles that go through positive polarization reversal by each
one stepped-increase in the drive voltage, which helps to prevent the occurrence of
excessive inrush current in the element. As a consequence thereof, unnecessary electron
emission can be avoided. Moreover, it becomes also possible to increase the element
voltage at a relatively high rate because it is not necessary to be concerned with
any unnecessary electron emission. Thus, it is possible to reduce "an amount of the
leakage of accumulated electrons to the upper electrode" which leakage may occur when
the element voltage is increased gradually. Consequently, it is possible to increase
the total amount of emitted electrons.
[0016] Note that the number of steps is not limited in changing the positive voltage stepwise.
Therefore, for example, the element voltage may be firstly increased from the first
voltage to the second voltage larger than the first voltage, then, it may be increased
from the second voltage to another voltage larger than the second voltage, and then,
it may be thereafter changed to the negative voltage.
[0017] An electron emission apparatus according to another embodiment of the present invention
comprises the above electron emission element, and further comprises drive voltage
applying means for applying a drive voltage between the lower electrode and the upper
electrode in such a manner that the drive voltage causes the element voltage to reach
the negative voltage in order that electrons are accumulated in the emitter section,
and then causes the element voltage to reach the positive voltage in order that the
accumulated electrons are emitted.
[0018] The drive voltage applying means is configured to apply, as a drive voltage for causing
the element voltage to reach the positive voltage, between the lower electrode and
the upper electrode, a voltage which has a plurality of pulses generated intermittently
(a plurality of pulses having an intermittent waveform pattern). The maximum value
of each of the pulses is not less than the maximum value of the immediately preceding
pulse so that the maximum values of the pulses are on the increase. In addition, the
voltage alters to keep the element voltage at a level which causes no electron accumulation
into the emitter section during each interval between the successive pulses. (refer
to Fig.17, Fig.19, Fig.20, and Fig.22). In such a waveform pattern, the maximum value
of each pulses (the maximum value of a voltage pulse for electron emission) is a voltage
having a value sufficiently large for reversing dipoles of the emitter section (a
positive polarization reversal) which have gone through reversals (negative polarization
reversals) during the electron accumulation.
[0019] With the above configuration, electrons are emitted at a predetermined timing within
a period where a voltage having a pulse (waveform) is applied. Moreover, it is possible
to provide a time interval, in which no electron is emitted, between two successive
electron emissions (i.e. an interval between two successive pulses). As a consequence,
it is possible to achieve electron emission at any timing that meets the requirements
of a display device, etc., to which the electron emission apparatus is applied. In
other words, the apparatus can provide a substantial increase in the frequency of
electron emissions.
[0020] Furthermore, the changing of a drive voltage in this way makes it possible to reduce
the power consumption of the electron emission apparatus.
[0021] When changing the drive voltage, it is preferable that the drive voltage applied
between the lower electrode and the upper electrode during the interval of the two
successive pulses has an absolute value smaller than that of the coercive electric
field voltage (coercive voltage) of the emitter section.
[0022] Herein, the coercive electric field voltage means "a voltage determined by the material
of the emitter section and the thickness of the emitter section" at which polarization
reversal (a phenomenon of the reversing of dipole orientation) occurs in the emitter
section (a dielectric material). In an electron emission element employed in an electron
emission apparatus according to the present invention, the absolute value of the positive
coercive electric field voltage is larger than the absolute value of the negative
coercive electric field voltage because of the structure of the upper electrode which
is an "eaves structure" as described later, while the absolute value of the negative
coercive electric field voltage is approximately equal to the absolute value of the
coercive electric field voltage of the emitter.
[0023] Therefore, it is theoretically understood that no electron emission or electron accumulation
occurs if the absolute value of a voltage applied between the lower electrode and
the upper electrode within an interval between two successive pulses is smaller than
the positive coercive electric field voltage; and in such a case, electrons stay in
the emitter section.
[0024] Practically, however, a continuous applying of a voltage greater than the coercive
electric field voltage (of the emitter section) of the element between the upper electrode
and the lower electrode might cause electrons to travel on the surface of the emitter
section and cause such electrons to leak into the portion of the upper electrode,
said portion being in contact with the emitter section, thereby decreasing the amount
of accumulated electrons.
[0025] Therefore, the absolute value of the above-described voltage applied between the
lower electrode and the upper electrode within the interval between the two successive
pulses should be set smaller than the coercive electric field voltage of the emitter
section. If set so, the leakage of electrons does not occur; and in addition to that,
no polarization reversal does not occur in the emitter section, which ensures that
electrons held in the emitter section stay in the emitter section.
[0026] The above-described absolute value of the voltage applied between the lower electrode
and the upper electrode within the interval between the two successive pulses should
be, preferably, not more than 1/4 of the coercive electric field voltage of the emitter
section. It is more preferable that the value be not more than 1 /10 thereof, and
most preferable if 0V (zero volt). As the absolute value of the voltage becomes smaller,
the advantageous effect that power consumption within in the electron emission element
is reduced can be obtained.
[0027] Moreover, it is more preferable that the length of time from the start of the rising
to the end of the falling of each pulse (Tps --- voltage pulse duration [width]) should
be set shorter than the length of time from the end of the falling of each pulse to
the start of the rising of the subsequent pulse (Trs --- voltage pulse pause period
between successive two voltage pulses).
[0028] With such a pulse waveform configuration, the length of time within which a voltage
larger than the coercive electric field voltage of the emitter section is being applied
between the upper electrode and the lower electrode is shortened; and therefore, the
amount of the above-mentioned leakage of electrons into the upper electrode is reduced.
Consequently, the total amount of electron emission increases. Herein, it is preferable
that the time length Tps (voltage pulse duration) should be not more than 1/2 of the
time length Trs (voltage pulse pause period between successive two voltage pulses),
and more preferably, it should be not more than 1/5 thereof.
[0029] In such an electron emission apparatus, there are many cases where the electron accumulation
and the electron emission are repeatedly carried out. That is, said drive voltage
applying means is configured to apply said drive voltage between the upper electrode
and the lower electrode repeatedly.
[0030] When having such a configuration, it is preferable that, during a period from a timing
when the drive voltage is set at a level to cause the element voltage to reach the
negative voltage till a timing when the drive voltage is set at the level to cause
the element voltage to reach the negative voltage again to restart the electron accumulation
operation after the drive voltage is set at a level to cause the element voltage to
reach the positive voltage, the drive voltage when causing the element voltage to
reach the positive voltage should have such a waveform that the last pulse, which
is generated immediately before the restart of the electron accumulation operation,
has the longest pulse duration among said plurality of voltage pulses generated intermittently.
[0031] With such a pulse pattern, it is possible to stabilize the polarization state of
the emitter section which is disordered due to application of a plurality of voltage
pulses, by means of the voltage pulse immediately before the restart of the electron
accumulation operation (the last voltage pulse). In addition, the above-mentioned
leakage of electrons into the upper electrode will occur if the pulse durations of
preceding pulses before the last pulse are set longer than the duration of the last
pulse; and consequently, the total amount of electron emission might decrease. In
contrast thereto, the last pulse is supposed to completely emit any remaining electrons
that have still stayed in the emitter section. In other words, there is no more pulse
provided for electron emission after the last voltage pulse without having another
electron accumulation time period. Thus, even if it is assumed that any leakage of
electrons into the upper electrode occurs due to the lengthened pulse duration of
the last voltage pulse, such a leakage will have no adverse impact on electron emission
performed after the last voltage pulse.
[0032] As a consequence thereof, it becomes possible for an electron emission apparatus
to emit a large number of electrons steadily for a long time period. It should be
noted that, in addition to setting the pulse duration as such, it is preferable to
set the maximum value of the last pulse immediately before the restart of electron
accumulation operation at a value significantly larger than those of a plurality of
the other voltage pulses preceding the last voltage pulse. If set so, the above-described
polarization stabilizing effect and so on will be emerged more efficiently.
[0033] Furthermore, if an electron emission apparatus is provided with a phosphor that illuminates
by means of electrons emitted from said electron emission apparatus, it is possible
to efficiently utilize the persistent light (remaining light, afterglow) of the phosphor
by setting the time length Tps (voltage pulse duration) shorter than the time length
Trs (voltage pulse pause period between successive two voltage pulses). That is, as
the phosphor emits the persistent light after electron irradiation, the above configuration
makes it possible to obtain a larger light emission amount while keeping energy involved
in electron emission small.
[0034] In still another embodiment of the present invention, at least one pulse contained
in the above-described pulse waveform (at least one pulse among a plurality of the
voltage pulses) has such a pulse-characteristic that a voltage (a maximum voltage)
according to said one pulse decreases to stop the emission of accumulated electrons
at a point in time before the electron emission is completed if the voltage according
to said one pulse (i.e. the voltage pulse) is kept unchanged (i.e., if a maximum voltage
of said one pulse continues to be applied).
[0035] With such a pulse form, it is possible to emit electrons a plurality of times even
when applying two or more pulse-formed voltages (voltage pulse) having the same maximum
values. In other words, there is less necessity to have many pulses having the maximum
value different from those of the others in order to achieve electron emission in
a plural number of times. Further to that, as the voltage of the pulse (pulse-waveform)
is decreased in the middle of electron emission, it is possible to shorten the duration
of each pulse. As a consequence thereof, it is further possible to increase the frequency
of electron emission.
[0036] It should be noted that it is preferable to set the durations of the second and subsequent
pulses longer than that of the first pulse when applying a plurality of pulses having
the same maximum value to the element for electron emission. This is because electrons
can be emitted even with a short pulse duration as the amount of accumulated electrons
is large at the time of the first application of the pulse-formed voltage (i.e., at
the time of the first pulse). In addition to that reason, because the amount of the
accumulated electrons remaining in the emitter section decreases by the first emission
owing to the first pulse, elongating the duration of the second and subsequent pulses
can ensure electron emission at the time of the application of the second pulse and
the subsequent pulses.
[0037] According to one of the embodiments of the present invention, said drive voltage
applying means comprises an electron accumulation voltage generation source that generates
a negative voltage at its both ends for accumulating electrons in said emitter section;
a sinusoidal wave generation circuit that generates a voltage fluctuating in a sinusoidal
wave pattern at its both ends; a keeping voltage generation source that generates
a voltage at its both ends for keeping the element voltage at a voltage level at which
no accumulation of electrons into the emitter section occurs during an interval of
the successive pulses; and a switching controlling means for connecting the upper
electrode and the lower electrode respectively with said both ends of said electron
accumulation voltage generation source, and thereafter, said both ends of said sinusoidal
wave generation circuit, and said both ends of said keeping voltage generation source
in an alternate manner.
[0038] With such a configuration, it is possible to accumulate the electrons in the emitter
section by connecting the upper electrode and the lower electrode with the both ends
of the electron accumulation voltage generation source, and thereafter, it is possiblet
to apply a plurality of pulses by connecting the upper electrode and the lower electrode
with the both ends of the sinusoidal wave generation circuit at appropriate timings.
[0039] Further with such a configuration, each of the pulses increases in a sinusoidal wave
pattern. That is, it is possible to give an inclination to a plurality of pulses when
increasing by means of a simple configuration.
[0040] An electron emission method according to the present invention is an electron emission
method employing the above electron emission element, wherein an element voltage,
which is the potential of the upper electrode with respect to the potential of the
lower electrode, is set at a negative voltage to supply electrons from the upper electrode
to the emitter section and to accumulate the electrons in the emitter section, and
thereafter, the element voltage is increased to the first positive voltage to cause
electrons accumulated in the emitter section to emit via the micro through holes,
and thereafter, the element voltage is increased to the second positive voltage larger
than the first voltage to cause electrons remaining in the emitter section to emit
via the micro through holes.
[0041] According to such a method, in the same manner as the above-described electron emission
apparatus of the present invention, electrons accumulated in the emitter section in
one electron accumulation operation is emitted in a plural number of times. Accordingly,
because of the same reason as above, it is possible to increase the amount of electron
emission (total electron emission amount) during a given period T while avoiding the
degradation of the element due to heating, increased number of polarization reversals,
and so on.
[0042] Note that the number of voltage levels applied for electron emission is not limited.
Therefore, for example, the element voltage may be firstly set at the first voltage
(for the first electron emission) and then increased from the first voltage to the
second voltage larger than the first voltage (for the second election emission), then,
it may be increased from the second voltage to another voltage larger than the second
voltage (for the third electron emission), thereby splitting electron emissions into
three times or more.
[0043] Also in such a case, when increasing the element voltage from the first voltage to
the second voltage, it is preferable to set the element voltage at the third voltage,
which is smaller than the first voltage, and which does not causes the element to
accumulate any of the electrons to the emitter section by, and then increase it to
the second voltage.
[0044] According to such a setting above, because a period in which no electron is emitted
within an interval of two successive electron emissions is provided, it is possible
to emit electrons at timings in response to various requests.
[0045] Also in such a case, due to the above-described reason, it is preferable that the
absolute value of the third voltage be smaller than the absolute value of the coercive
electric field voltage of said emitter section, and the time length during which the
first voltage is being applied be shorter than the time length during which the third
voltage is being applied.
[0046] Furthermore, an electron emission method according to another aspect of the present
invention comprises: a step of setting an element voltage, which is the potential
of the upper electrode relative to (or with respect to) the potential of the lower
electrode, at the negative voltage to supply electrons from the upper electrode to
the emitter section and to accumulate the electrons in the emitter section, and thereafter,
increasing the element voltage to the first positive voltage to cause electrons accumulated
in the emitter section to emit via the micro through holes and decreasing the element
voltage to the third voltage before the completion of the electron emission caused
by the first positive voltage, and thereafter, increasing the element voltage again
to the first positive voltage to cause electrons accumulated in the emitter section
to emit via the micro through holes; and a step of thereafter increasing the element
voltage to the second positive voltage larger than the first voltage to cause electrons
remaining in the emitter section to emit via the micro through holes.
[0047] According to such a method, it is possible to achieve electron emission in a plural
number of times by applying two or more pulses (voltage pulses) having the same maximum
value. Therefore, it is not necessary to generate many pulses having various maximum
values in order to increase the number of times of electron emission. Moreover, it
is possible to increase the frequency of electron emissions because the duration of
a pulse (voltage pulse duration) is shortened.
[0048] Further, the electron-emitting apparatus according to the present invention or the
element to which the electron-emitting method according to the present invention is
applied, preferably, comprises a phosphor which emits light by electron collision
and which is disposed in the upper side of the upper electrode to oppose the upper
electrode.
[0049] In general, if and when an excessively large amount of electrons collide with the
phosphor, a part of the energy of the electrons changes to the heat and thus the amount
of emission light from the phosphor is not increased. On the other hand, after ending
the collision of electrons, the phosphor emits light (remaining light) whose amount
decreases in accordance with the time elapse. Therefore, the phosphor can emit light
with high efficiency, if electrons whose amount is proper in that energy of the electrons
does not change to the heat are caused to collide with the phosphor, then, the collision
of electrons is stopped, and then electrons are caused to collide with the phosphor
again at the proper timing when an amount of light (remaining light) becomes small.
[0050] Therefore, as the electron-emitting apparatus or the electron-emitting method, according
to the present invention, a large amount of emission light can be generated with small
power-consumption by repeating the electron emission for a short period a plurality
of times and causing the emitted electrons to collide with the phosphor, while suppressing
an amount of emitted electrons for each of the electron emissions. As a result, it
is possible to provide a display device showing a clear image with lower power-consumption
or a light-emitting device capable of emitting a large amount of light.
[0051] In this case, preferably, the electron-emitting element used by the electron-emitting
apparatus or the electron-emitting method further comprises: a collector electrode
disposed near the phosphor; and collector voltage applying means for applying a voltage
to the collector electrode so that the collector electrode generates an electric field
which attracts the emitted electrons to the collector electrode side.
[0052] With this configuration, the electric field generated by the collector electrode
can certainly cause the electrons emitted from the emitter section via the micro through
holes of the upper electrode to collide with the phosphor. Further, the electric field
generated by the collector electrode accelerates the electrons by applying the energy
to the emitted electrons, thereby increasing the amount of emission light of the phosphor.
Brief Description of the Drawings
[0053]
Fig. 1 is a partial cross-sectional view showing an electron-emitting apparatus according
to a first embodiment of the present invention;
Fig. 2 is a partial cross-sectional view showing the electron-emitting apparatus shown
in Fig. 1, taken along a different plane;
Fig. 3 is a partial plan view showing the electron-emitting apparatus shown in Fig.
1;
Fig. 4 is an enlarged partial cross-sectional view showing the electron-emitting apparatus
shown in Fig. 1;
Fig. 5 is an enlarged partial plan view showing an upper electrode shown in Fig. 1;
Fig. 6 is a diagram showing one state showing the electron-emitting apparatus shown
in Fig. 1;
Fig. 7 is a graph showing the voltage-polarization characteristic of an emitter section
shown in Fig. 1;
Fig. 8 is a diagram showing another state of the electron-emitting apparatus shown
in Fig. 1;
Fig. 9 is a diagram showing another state of the electron-emitting apparatus shown
in Fig. 1;
Fig. 10 is a diagram showing another state of the electron-emitting apparatus shown
in Fig. 1;
Fig. 11 is a diagram showing another state of the electron-emitting apparatus shown
in Fig. 1;
Fig. 12 is a diagram showing another state of the electron-emitting apparatus shown
in Fig. 1;
Fig. 13 is a diagram showing a state of electrons emitted from an electron-emitting
apparatus having no focusing electrode;
Fig. 14 is a diagram showing a state of electrons emitted from the electron-emitting
apparatus shown in Fig. 1;
Fig. 15 is a time chart showing a drive voltage applied between the upper and lower
electrodes by a drive voltage applying circuit shown in Fig. 1 and the current of
emitted electrons indicating the amount of emitted electrons;
Fig. 16 is a circuit diagram showing the drive voltage applying circuit shown in Fig.
1, a focusing electrode potential applying circuit, and a collector voltage applying
circuit;
Fig. 17(A) is a time chart showing a drive voltages applied between upper and lower
electrodes by a drive voltage applying circuit in an electron-emitting apparatus according
to a second embodiment of the present invention and the current of emitted electrons
indicating the amount of emitted electrons and Fig. 17(B) is a graph showing the voltage-polarization
characteristic of an emitter section;
Fig. 18 is a time chart showing a drive voltage applied between upper and lower electrodes
by a drive voltage applying circuit in an electron-emitting apparatus and the current
of emitted electrons indicating the amount of emitted electrons according to a third
embodiment of the present invention;
Fig. 19 is a time chart showing a drive voltage applied between upper and lower electrodes
by a drive voltage applying circuit in an electron-emitting apparatus and the current
of emitted electrons indicating the amount of emitted electrons according to a fourth
embodiment of the present invention;
Fig. 20 is a time chart showing a drive voltage applied between upper and lower electrodes
by a drive voltage applying circuit in an electron-emitting apparatus and the current
of emitted electrons indicating the amount of emitted electrons according to a fifth
embodiment of the present invention;
Fig. 21 is a circuit diagram showing a drive voltage applying circuit of an electron-emitting
apparatus according to a sixth embodiment of the present invention;
Fig. 22 is a time chart showing the drive voltage applied between upper and lower
electrodes by the drive voltage applying circuit in the electron-emitting apparatus
and the current of emission electrons indicating the amount of emission electrons
according to the sixth embodiment of the present invention;
Fig. 23 is a circuit diagram showing the drive voltage applying circuit of an electron-emitting
apparatus according to a modification of the sixth embodiment of the present invention;
Fig. 24 is a partial cross-sectional view showing an electron-emitting apparatus according
to a seventh embodiment of the present invention;
Fig. 25 is a partial plan view of one modification of the electron-emitting apparatus
according to the present invention;
Fig. 26 is a partial plan view showing another modification of the electron-emitting
apparatus according to the present invention;
Fig. 27 is a partial cross-sectional view showing still another modification of the
electron-emitting apparatus according to the present invention;
Fig. 28 is another partial cross-sectional view showing the electron-emitting apparatus
shown in Fig. 27;
Fig. 29 is a time chart showing a drive voltage applied between upper and lower electrodes
in a conventional electron-emitting apparatus and the current of emitted electrons
indicating the amount of emitted electrons;
Fig. 30 is a time chart showing another drive voltage applied between the upper and
lower electrodes in the conventional electron-emitting device and the current of emitted
electrons indicating the amount of emitted electrons; and
Fig. 31 is a time chart showing still another drive voltage applied between the upper
and lower electrodes in the conventional electron-emitting device and the current
of emitted electrons indicating the amount of emitted electrons.
Description of the preferred embodiment
[0054] Electron-emitting apparatuses and electron-emitting methods according to the embodiments
of the present invention will now be described with reference to the drawings. The
electron-emitting apparatus is applicable to electron beam irradiators, light sources,
such as a backlight of a liquid crystal screen, electron-emitting sources of manufacturing
apparatuses for electronic components, and the like. Note that in the description
below, the electron-emitting apparatuses are applied to displays.
(First embodiment)
(Structure)
[0055] As shown in Figs. 1 to 3, an electron emitting apparatus 10 according to a first
embodiment of the present invention comprises: a substrate 11; a plurality of lower
electrodes (lower electrode layers) 12; an emitter section 13; a plurality of upper
electrodes (upper electrode layers) 14; an insulating layers 15; and a plurality of
focusing electrodes (focusing electrode layers) 16. Fig. 1 is a cross-sectional view
showing the electron-emitting apparatus 10 taken along a line I-I in Fig. 3, which
is a partial plan view showing the electron-emitting apparatus 10. Fig. 2 is a cross-sectional
view showing the electron-emitting apparatus 10 taken by a plane along a line II-II
in Fig. 3.
[0056] The substrate 11 is a thin plate having an upper surface and a lower surface parallel
to the plane (X-Y plane) defined by the X axis and the Y axis perpendicular to each
other. The thickness direction of the substrate 11 is the Z-axis direction perpendicular
to both the X and Y axes. The substrate 11 is made of, e.g., glass or ceramics (preferably,
a material containing zirconium oxide as a main component).
[0057] Each of the lower electrodes 12 is a layer made of a conductive material, e.g., silver
or platinum in this embodiment, and is disposed (formed) on the upper surface of the
substrate 11. In a plan view, each lower electrode 12 has a shape of a strip whose
longitudinal direction of the strip is the Y-axis direction. As shown in Fig. 1, the
adjacent two lower electrodes 12 are apart from each other by a predetermined distance
in the X-axis direction. Note that in Fig. 1, the lower electrodes 12 represented
by reference numerals 12-1, 12-2, and 12-3 are respectively referred to as a first
lower electrode, a second lower electrode, and a third lower electrode for the convenience
sake.
[0058] The emitter section 13 is made of a dielectric material having a high relative dielectric
constant (for example, a three-component material PMN-PT-PZ composed of lead magnesium
niobate (PMN), lead titanate (PT), and lead zirconate (PZ), and materials for the
emitter section 13 will be described in detail below). The emitter section 13 is formed
on the upper surfaces of the substrate 11 and lower electrodes 12. The emitter section
13 is a thin plate similar to the substrate 11. As shown in an enlarged view in Fig.
4, the upper surface of the emitter section 13 has irregularities (asperities) 13a
formed by the grain boundaries of the dielectric material.
[0059] Each of the upper electrodes 14 is a layer made of a conductive material, e.g., platinum
in this embodiment, and is formed on the upper surface of the emitter section 13.
As shown in a plan view of Fig. 3, each upper electrode 14 has a shape of a rectangle
having a short side and a long side respectively lying in the X-axis direction and
the Y-axis direction. The upper electrodes 14 are apart from one another and are disposed
(arranged) into a matrix. Each upper electrode 14 is opposed to the corresponding
lower electrode 12. In a plan view, the upper electrode 14 is disposed at a position
that overlaps the corresponding lower electrode 12.
[0060] Furthermore, as shown in Figs. 4 and 5, which is a partial enlarged view of the upper
electrode 14, each upper electrode 14 has a plurality of micro through holes 14a.
Note that in Figs. 1 and 3, the upper electrodes 14 represented by reference numerals
14-1, 14-2, and 14-3 are respectively referred to as a first upper electrode, a second
upper electrode, and a third upper electrode for the convenience sake. The upper electrodes
14 aligned in the same row with respect to the X-axis direction are connected to one
another by a layer (not shown) made of a conductor and are maintained at the same
electric potential. The surface of the upper electrodes 14 to oppose the emitter section
13 at the circumferences of a micro through holes 14a is apart from the emitter section
13 (i.e., upper surface of the emitter section 13), as shown by reference numeral
14b in Fig. 4. The structure of the upper electrode 14 may be referred to as an "eaves
structure" for convenience.
[0061] The lower electrodes 12, the emitter section 13, and the upper electrodes 14 made
of a platinum resinate paste are monolithically integrated by firing (baking). As
a result of the firing for integration, the upper electrode 14 shrinks and its thickness
of the upper electrode 14 reduces, for example, from 10 µm to 0.1 µm. Upon this shrinking,
the micro through holes 14a are formed in the upper electrode 14. Note that the average
diameter of the micro through holes 14a may be not less than 0.01 µm and not more
than 10 µm.
[0062] As shown in Fig. 6, a thickness t of the upper electrode 14 is 0.01 µm or more and
10 µm or less. Preferably, the thickness t is 0.05 µm or more and 1 µm or less. Further,
a maximum d of the distance between the emitter section 13 (upper surface of the upper
electrode 13) and the surface facing the emitter section 13 at the circumference of
each of the through hole 14a (end of the through hole) is larger than 0 µm and 10
µm or less. Preferably, the maximum d is 0.01 µm or more and 1 µm or less.
[0063] As described above, the portion where an upper electrode 14 overlaps the lower electrode
12 in a plan view forms one (single) element for emitting electrons. For example,
the first lower electrode 12-1, the first upper electrode 14-1, and the portion of
the emitter section 13 sandwiched between the first lower electrode 12-1 and the first
upper electrode 14-1 form a first element. The second lower electrode 12-2, the second
upper electrode 14-2, and the portion of the emitter section 13 sandwiched between
the second lower electrode 12-2 and the second upper electrode 14-2 form a second
element. The third lower electrode 12-3, the third upper electrode 14-3, and the portion
of the emitter section 13 sandwiched between the third lower electrode 12-3 and the
third upper electrode 14-3 form a third element. In this manner, the electron-emitting
apparatus 10 includes a plurality of independent electron-emitting elements.
[0064] The insulating layers 15 are disposed (formed) on the upper surface of the emitter
section 13 so as to fill the gaps between the upper electrodes 14. The thickness (the
length in the Z-axis direction) of each insulating layer 15 is slightly larger than
the thickness (the length in the Z-axis direction) of each upper electrode 14. As
shown in Figs. 1 and 2, the end portions of each insulating layer 15 in the X-axis
direction and the Y-axis direction cover the end portions of the upper electrodes
14 in the X-axis and Y-axis directions, respectively.
[0065] Each of the focusing electrodes 16 is a layer made of a conductive material, e.g.,
silver in this embodiment, and are disposed (formed) on each of the insulating layers
15. As shown in a plan view of Fig. 3, each focusing electrode 16 has a shape of a
strip whose longitudinal direction is the Y-axis direction. Each focusing electrode
16 is (formed) disposed between the upper electrodes of the elements adjacent to each
other in the X-axis direction and is slightly obliquely above the upper electrodes.
All the focusing electrodes 16 are connected to one another by a layer (not shown)
made of a conductor and maintained at the same potential.
[0066] In Figs. 1 and 3, the focusing electrodes 16 represented by reference numerals 16-1,
16-2, and 16-3 are respectively referred to as a first focusing electrode, a second
focusing electrode, and a third focusing electrode for the convenience sake. The second
focusing electrode 16-2 lies between the first upper electrode 14-1 of the first element
and the second upper electrode 14-2 of the second element and is located obliquely
above the first and second upper electrodes 14-1 and 14-2. Similarly, the third focusing
electrode 16-3 is between the second upper electrode 14-2 of the second element and
the third upper electrode 14-3 of the third element and is located obliquely above
the second and third upper electrodes 14-2 and 14-3.
[0067] The electron emitting apparatus 10 further comprises: a transparent plate 17; a collector
electrode (collector electrode layer) 18; and phosphors 19.
[0068] The transparent plate 17 is made of a transparent material (e.g., glass or acrylic
resin in this embodiment), and is disposed above the upper electrodes 14 so that the
transparent plate 17 is apart from the upper electrodes 14 in the positive direction
of the Z axis by a predetermined distance. The upper and lower surfaces of the transparent
plate 17 are parallel to the upper surfaces of the emitter section 13 and the upper
electrodes 14 (i.e., the upper and lower surfaces lie in the X-Y plane).
[0069] The collector electrode 18 is made of a conductive material (e.g., in this embodiment,
a transparent conductive film made of indium tin oxide (ITO)) and is formed as a layer
covering the entire lower surface of the transparent plate 17. In other words, the
collector electrode 18 is disposed above the upper electrodes 14 to be opposed to
the upper electrodes 14 apart from the upper electrode 14 for a predetermined distance.
[0070] Each phosphor 19 enters the exciting state by the collision of electrons, and emits
red, green, or blue light in the transition from the exciting state to the base state.
In a plan view, each phosphor 19 has substantially the same shape as that of the upper
electrode 14 and is provided at the lower surface of the collector electrode 18 in
a position overlapping the corresponding upper electrode 14. In Fig. 1, the phosphors
19 represented by reference numerals 19R, 19G, and 19B respectively emit red, green,
and blue light. In this embodiment, the red phosphor 19R is disposed directly above
the first upper electrode 14-1 (i.e., in the positive direction of the Z axis), the
green phosphor 19G is disposed directly above the second upper electrode 14-2, and
the blue phosphor 19B is disposed directly above the third upper electrode 14-3.
[0071] For example, the red phosphor may be made of Y
2O
2S:Eu, the green phosphor may be made of ZnS:Cu and Al, and the blue phosphor may be
made of ZnS:Ag and Cl. Further, if the phosphor 19 is made of Y
2O
2S:Tb, a white phosphor which emits white light can be obtained. Or, the white phosphor
can be manufactured by mixing the red phosphor (e.g., Y
2O
2S:Eu), the green phosphor (e.g., ZnS:Cu and Al), and the blue phosphor (e.g., ZnS:Ag
and C1).
[0072] The space surrounded by the emitter section 13, the upper electrodes 14, the insulating
layers 15, the focusing electrodes 16, and the transparent plate 17 (the collector
electrode 18) is maintained under substantial vacuum of preferably 10
2 to 10
-6 Pa and more preferably 10
-3 to 10
-5 Pa. In other words, the side walls (not shown) of the electron emitting apparatus
10, the transparent plate 17, and the collector electrode 18 serve as the members
for defining a hermetically closed space, and this hermetically closed space is maintained
under substantial vacuum. The elements (at least the upper part of the emitter section
13 and the upper electrode 14 of each element) of the electron emitting apparatus
10 are disposed inside the hermetically closed space under substantial vacuum.
[0073] As shown in Fig. 1, the electron emitting apparatus 10 further comprises a drive
voltage applying circuit (drive voltage applying means or potential difference applying
means) 21, a focusing electrode potential applying circuit (focusing electrode potential
difference applying means) 22, and a collector voltage applying circuit (collector
voltage applying means) 23.
[0074] The drive voltage applying circuit 21 includes a power supply 21s which generates
a drive voltage Vin (which will be described later). The power supply 21 s is connected
to the upper electrodes 14 and the lower electrodes 12. In other words, the drive
voltage applying circuit 21 comprises the power supply 21 s and a circuit for connecting
the power supply 21s to each of the elements. Further, the drive voltage applying
circuit 21 is connected to a signal control circuit 100 and a power circuit 110. The
drive voltage applying circuit 21 applies the drive voltage Vin (to the element) between
the lower electrode 12 and the upper electrode 14 facing to each other, based on the
signal received from the signal control circuit 100.
[0075] The focusing electrode potential applying circuit 22 is connected to the focusing
electrodes 16 and constantly applies a predetermined negative potential (voltage)
Vs to the focusing electrodes 16.
[0076] The collector voltage applying circuit 23 applies a predetermined voltage (collector
voltage) to the collector electrode 18 and includes a resistance 23a, a switching
element 23b, a constant voltage source 23c, and a switch control circuit 23d. One
end of the resistance 23a is connected to the collector electrode 18. The other end
of the resistance 23a is connected to a fixed connection point of the switching element
23b. The switching element 23b is a semiconductor element, such as MOS-FET, and is
connected to the switch control circuit 23d.
[0077] The switching element 23b has two switching points in addition to the above-described
fixed connection point. In response to the control signal from the switch control
circuit 23d, the switching element 23b selectively couples the fixed connection point
to one of the two switching points. One of the two switching points is grounded, and
the other is connected to the anode of the constant voltage source 23c. The cathode
of the constant voltage source 23c is grounded. The switch control circuit 23d is
connected to the signal control circuit 100, and controls the switching operation
of the switching element 23b based on the signal received from the signal control
circuit 100.
(Principle and Operation of Electron Emission)
[0078] The principle of the electron emission of the electron emitting apparatus 10 having
the above-described structure will now be explained. Hereinafter, for the purpose
of a brief description, the drive voltage Vin has a simple rectangular waveform different
from the drive voltage Vin according to the first embodiment.
[0079] First, the state is described with reference to Fig. 6 in which the actual potential
difference Vka (element voltage Vka) between the lower electrode 12 and the upper
electrode 14 relative to the lower electrode 12 is maintained at a predetermined positive
voltage Vp and in which all the electrons in the emitter section 13 have been emitted
without remaining in the emitter section 13. At this stage, the negative pole of each
of the dipoles in the emitter section 13 is oriented toward the upper surface of the
emitter section 13, (i.e., oriented in the positive direction of the Z axis toward
the upper electrode 14). This state is observed at a point p1 on the graph shown in
Fig. 7. The graph in Fig. 7 shows the voltage-polarization characteristic of the emitter
section 13 and has the abscissa indicating the element voltage Vka and the ordinate
indicating the charge Q accumulated in the element 10.
[0080] At this state, when the drive voltage Vin is set at a predetermined negative voltage
Vm2 so that the element voltage Vka becomes the predetermined negative voltage Vm2,
the element voltage Vka decreases toward a point p3 via a point p2 in Fig. 7. Once
the element voltage Vka is decreased to near the negative coercive electric field
voltage Va shown in Fig. 7, the orientation of the dipoles in the emitter section
13 starts reversing. In other words, the polarization reversal (negative-side polarization
reversal) starts, as shown in Fig. 8. The polarization reversal increases the electric
field in the contact sites (triple junctions) between the upper surface of the emitter
section 13, the upper electrodes 14, and the ambient medium (in this embodiment, vacuum)
and/or increases the electric field at the distal end portions of the upper electrodes
14 forming the micro through holes 14a. (In other words, electrical field concentration
occurs at these sites). As a result, as shown in Fig. 9, the electrons are started
to be supplied toward the emitter section 13 from the upper electrodes 14.
[0081] Note that the coercive electric field voltage (coercive voltage) means "a voltage
determined by the material of the emitter section 13 and the thickness of the emitter
section 13" at which polarization reversal occurs at the emitter section 13 (a dielectric
material). That is, given a predetermined thickness of the emitter section 13, the
absolute value (|Va|) of the coercive electric field voltage Va is determined by the
material of the emitter section 13. According to the electron emission element used
by the electron emission apparatus of the present invention, the absolute value of
the positive coercive electric field voltage Vd, which will be described later, is
larger than the absolute value of the negative coercive electric field voltage (the
absolute value of the negative coercive electric field voltage being equal to the
absolute value of the coercive electric field voltage of the emitter) because of the
"eaves structure" of the upper electrode 14.
[0082] The electrons supplied as above are accumulated mainly in the upper part of the emitter
section 13 near the region exposed through the micro through hole 14a and near the
distal end portions of the upper electrode 14 that define the micro through hole 14a
(this portion where the electrons are accumulated is hereinafter simply referred to
as "the region near the micro through holes 14a of the emitter section 13"). Subsequently,
the negative-side polarization reversal is completed when a predetermined time passes,
and thereafter, the element voltage Vka rapidly changes toward the predetermined negative
voltage Vm2. As a result, electron accumulation is completed, (i.e., a saturation
state of electron accumulation is reached). This state is observed at a point p4 in
Fig. 7.
[0083] At this state, the drive voltage Vin is set at a predetermined positive voltage (second
voltage) Vp2 so that the element voltage Vka becomes the predetermined positive voltage
Vp2. Thus, the element voltage Vka starts to increase. Until the element voltage Vka
becomes the voltage Vb (point p6) slightly smaller than the positive coercive electric
field voltage Vd corresponding to a point p5 in Fig. 7, the charge state of the emitter
section 13 is maintained, as shown in Fig. 10. Subsequently, the element voltage Vka
reaches a value near the positive coercive electric field voltage Vd. This causes
the negative poles of the dipoles to orient toward the upper surface of the emitter
section 13. In other words, as shown in Fig. 11, the polarization reversal starts
for the second time, (i.e., the positive-side polarization reversal is initiated).
This state is observed near the point p5 in Fig. 7.
[0084] Subsequently, the positive-side polarization reversal proceeds, and thus, the number
of the dipoles having negative poles oriented toward the upper surface of the emitter
section 13 increases. As a result, as shown in Fig. 12, the electrons accumulated
in the region near the micro through holes 14a of the emitter section 13 are started
to be emitted in the upward direction (the positive direction of the Z axis) through
the micro through holes 14a by Coulomb repulsion. At this time, a part of the accumulated
electrons collides with the upper electrode 14, and thus, they are recaptured (recovered)
by the upper electrode 14. In addition, the collision generates the secondary electron
emission, and a part of the electrons generated by the secondary electron emission
is emitted upward via the micro through holes 14a.
[0085] Then, the positive-side polarization reversal completes. As a consequence, the element
voltage Vka starts to increase rapidly, and the element voltage Vka reaches the positive
predetermined voltage Vp2 (at the state p1 in Fig. 7). During this operation, electrons
are emitted continuously and then all electrons are emitted. Thereafter, the drive
voltage Vin is set again at the predetermined negative voltage Vm2 so that the element
voltage Vka becomes a predetermined negative voltage Vm2. Thus, the element voltage
Vka reduces toward the point p3 via the point p2 shown in Fig. 7. This summarizes
the principle of a series of operation including electron accumulation (light OFF
state) and electron emission (light ON or emission state).
[0086] Note that, when a plurality of elements exist, the drive voltage applying circuit
21 sets the drive voltage Vin of only the upper electrodes 14 (between the upper and
lower electrodes) from which electron emission is required at the predetermined negative
voltage Vm2 to accumulate electrons, and maintains the drive voltage Vin of upper
electrodes 14 from which no electron emission is required at "zero (0) V". Subsequently,
the drive voltage applying circuit 21 simultaneously sets the drive voltage Vin of
all of the upper electrodes 14 at the predetermined positive value Vp2. According
to this drive voltage Vin, electrons are emitted from the upper electrodes 14 (via
the micro through holes 14a) of only the elements in which electrons have been accumulated
in the emitter section 13. Thus, no polarization reversal occurs in the portions of
emitter section 13 near the upper electrodes 14 from which no electron emission is
required.
[0087] When electrons are emitted through the micro through holes 14a of the upper electrodes
14, the electrons travel in the positive direction of the Z axis by spreading (into
the shape of a cone), as shown in Fig. 13. Thus, in an apparatus of the related art,
electrons emitted from one upper electrode 14, e.g., the second upper electrode 14-2,
reach not only the phosphor 19, e.g., the green phosphor 19G, directly above that
upper electrode 14 but also the phosphors 19, e.g., the red phosphor 19R and the blue
phosphor 19B, adjacent to this phosphor 19. This decreases color purity and sharpness
of images.
[0088] In contrast, the electron emitting apparatus 10 of this embodiment has focusing electrodes
16 to which a negative potential is applied. Each focusing electrode 16 is interposed
between the adjacent upper electrodes 14 (i.e., between the upper electrodes of the
adjacent elements) and is disposed at a position slightly above the upper electrodes
14. Thus, as shown in Fig. 14, the electrons emitted from the micro through holes
14a travel substantially directly upward without spreading by the electric field generated
by the focusing electrode 16.
[0089] As a result, the electrons emitted from the first upper electrode 14-1 reach only
the red phosphor 19R, the electrons emitted from the second upper electrode 14-2 reach
only the green phosphor 19G, and the electrons emitted from the third upper electrode
14-3 reach only the blue phosphor 19B. Thus, the color purity of the display does
not decrease, and sharper images can be obtained.
(Control of Drive Voltage Vin)
[0090] Next, a description is given of the control of the drive voltage Vin by the drive
voltage applying circuit 21. In the specification, an expression that the drive voltage
Vin is a positive voltage means that the drive voltage Vin is a voltage which makes
the potential (element voltage Vka) of the upper electrode 14 relative to the potential
of the lower electrode 12 equal to the positive voltage". Therefore, an expression
that the drive voltage Vin is a negative voltage means that the drive voltage Vin
is a voltage which makes the element voltage Vka equal to the negative voltage".
[0091] First, the power supply 21 s of the drive voltage applying circuit 21 sets the drive
voltage Vin at a predetermined negative voltage Vm2 (e.g., -70V) at a time t1, a predetermined
timing, as shown in Fig. 15. Thus, the element voltage Vka alters toward the predetermined
negative voltage Vm2. Therefore, the negative-side polarization reversal is caused
in the emitter section 13, and electrons are supplied to the emitter section 13 from
the upper electrode 14 and are accumulated in the region near the micro through holes
14a of the emitter section 13.
[0092] When the charge accumulation period Td passes from the time t1, i.e., at the time
t2, the power supply 21 s of the drive voltage applying circuit 21 sets the drive
voltage Vin at a predetermined positive voltage Vp1 (e.g., +200V). As a consequence,
the element voltage Vka alters toward the predetermined positive voltage Vp1. The
predetermined positive voltage Vp1 is higher than the above-mentioned positive coercive
electric field voltage Vd, and is not less than the minimum voltage (electron emission
threshold voltage Vth) for starting the electron emission when the element 10 is in
the state where it holds (accumulates) the electrons. Thus, the positive-side polarization
reversal starts and the electrons accumulated in the region near the micro through
holes 14a are emitted via the micro through holes 14a. The predetermined positive
voltage Vp1 is also referred to as the "first voltage" for the convenience sake.
[0093] When a predetermined time passes from the time t2, the first electron-emission ends.
After that, at a time t3, the power supply 21s of the drive voltage applying circuit
21 sets the drive voltage Vin at the predetermined positive voltage Vp2 (e.g., +300V).
The predetermined positive voltage Vp2 is higher than the predetermined positive voltage
Vp1. Therefore, the element voltage Vka alters toward the voltage Vp2 which is higher
than the above-mentioned electron emission threshold voltage Vth and which is higher
than the first voltage Vp1. The predetermined positive voltage Vp2 is also referred
to as a "second voltage" for the convenience sake.
[0094] As a consequence, during the period (first electron-emission period) from the time
t2 to the time t3, the dipoles having the negative poles that have not reversed to
orient toward the upper surface of the emitter section 13 (i.e. the dipoles having
the negative poles that have not undergone the positive-side polarization reversal)
start the positive-side polarization reversal after the time t3. Therefore, Coulomb
repulsion is generated again and thereby the electrons remaining in the region near
the micro through holes 14a of the emitter section 13 are emitted in the upward direction
via the micron through holes 14a. In other words, just after the time t3, second electron-emission
is performed. The period of the time t3 to t4 may be referred to as a second electro-emission
period.
[0095] At the time t4 after a predetermined time passes (i.e., when the electron-emission
period Th passes from the time t2), the power supply 21s of the drive voltage applying
circuit 21 sets the drive voltage Vin at the predetermined negative voltage Vm2 again.
As a consequence, the accumulation of electrons to the emitter section 13 restarts.
The drive voltage applying circuit 21 (power supply 21s) thereafter repeats the operation
during the time t1 to t4.
(Control of Collector Electrode)
[0096] Next, a description is given of the control of a collector electrode by the collector
voltage applying circuit 23. Within a collector voltage applying period starting from
"time t2 at which the drive voltage Vin is set at the first voltage Vp1, serving as
the predetermined positive voltage" to the "time just before the time t4 at which
the drive voltage Vin is set at the predetermined negative voltage Vm2 to start the
electron-accumulation to the emitter section 13 after the second electro-emission
completes", the collector voltage applying circuit 23 applies a voltage Vc to the
collector electrode 18. In other words, the collector voltage applying circuit 23
connects the fixed connection point of the switching element 23b to the anode of the
constant voltage source 23c for the collector voltage applying period.
[0097] By this operation, the collector electrode 18 generates the electric field for collecting
the emitted electrons. As a result, the emitted electrons via the fine through holes
14a from the emitter section 13 are accelerated (i.e., given high energy) by the electric
field generated by the collector electrode 18 and travel in the upward direction from
the upper electrode 14. Thus, the phosphors 19 are irradiated with electrons having
high energy, and therefore, high luminance is achieved.
[0098] Further, the collector voltage applying circuit 23 applies a voltage (e.g., 0V) lower
than the voltage Vc to the collector electrode 18 during the period (collector voltage
non-applying period) except for the collector voltage applying period. That is, the
collector voltage applying circuit 23 connects the fixed connection point of the switching
element 23b to the earthed switching point during the collector voltage non-applying
period. The collector voltage non-applying period matches the charge accumulation
period Td.
[0099] Thus, the collector electrode 18 does not generate the electric field for attracting
(collecting) the emitted electrodes or reduces the intensity of such electric field.
Therefore, even if unnecessary electrons are emitted due to a large inrush current
flowing through the element 10 during the charge accumulation period Td or due to
an excessive large change rate in the element voltage (excessively large rate of voltage
change) after the negative-side polarization reversal, the number of electrons reaching
the phosphors 19 among the thus emitted electrons reduces. As a result, unnecessary
light emission can be avoided.
[0100] The switching element 23b may be configured such that the earthed switching point
is replaced by a floating point coupled to nowhere. In this case, the collector electrode
18 is caused to enter a floating state during the collector voltage non-applying period.
The floating state of the collector electrode 18 prevents the generation of electric
field for collecting the emitted electrons. Thus, by the reason similar to the above-mentioned
reason, unnecessary electron emission can be avoided.
(Examples of Drive Voltage Applying Circuit, Focusing Electrode Potential Applying
Circuit, and Collector Voltage applying Circuit)
[0101] The examples and operation of the drive voltage applying circuit 21, the focusing
electrode potential applying circuit 22, and the collector voltage applying circuit
23 will now be explained.
[0102] As shown in Fig. 16, the drive voltage applying circuit 21 comprises:
a row selection circuit 21 a; a pulse generator 21b; and a signal supplying circuit
21c. In Fig. 16, each of the components labeled D11, D12, ...D22, and D23 represents
one element (one electron-emitting element constituted from the portion where upper
electrode 14 is superimposed on the lower electrode 12 with the emitter section 13
therebetween). In this embodiment, the electron emitting apparatus 10 has a number
n of elements in the row direction and a number m of elements in the column direction.
[0103] The row selection circuit 21 a is connected to a control signal line 100a of the
signal control circuit 100 and a positive electrode line 110p and a negative electrode
line 110m of the power circuit 110. The row selection circuit 21 a is also connected
to a plurality of row selection lines LL. Each row selection line LL is connected
to the lower electrodes 12 of a series of elements in the same row. For example, a
row selection line LL1 is connected to the lower electrodes 12 of elements D11, D12,
D13, ... and D1m in the first row, and a row selection line LL2 is connected to the
lower electrodes 12 of elements D21, D22, D23, ... and D2m in the second row.
[0104] During the charge accumulation period Td in which electrons are being accumulated
in the emitter section 13 of each element, the row selection circuit 21 a outputs
a selection signal Ss (a 70V voltage signal in this embodiment) to one of the row
selection lines LL and outputs non-selection signals Sn (a 0V voltage signal in this
embodiment) to the rest of the row selection lines LL for a predetermined period (row
selection period) Ts in response to the control signal from the signal control circuit
100. The row selection line LL to which the selection signal Ss is output from the
row selection circuit 21 a is sequentially changed every row selection period Ts.
[0105] The pulse generator 21 b generates a reference voltage (0V in this embodiment) during
a charge accumulation period Td, further generates a first fixed voltage (-250V in
this embodiment) during a first electron-emission period (corresponding to the period
from the time t2 to t3 in Fig. 15) which is a former half period of the light emission
period (light ON period or electron emitting period) Th, and furthermore generates
a second fixed voltage (-350V in this embodiment) during the second electron-emission
period (corresponding to the period from the time t3 to t4 in Fig. 15), which is a
latter half period of the light emission period Th. The pulse generator 21 b is coupled
between the negative electrode line 110m of the power circuit 110 and the ground (GND).
[0106] The signal supplying circuit 21c is connected to the a control signal line 100b of
the signal control circuit 100 and the positive electrode line 110p and the negative
electrode line 110m of the power circuit 110. The signal supplying circuit 21 c has
a pulse generating circuit 21c1 and an amplitude modulator circuit 21 c2 inside.
[0107] The pulse generating circuit 21 c1 outputs a pulse signal Sp having a predetermined
amplitude (70V in this embodiment) with a predetermined pulse period during the charge
accumulation period Td, and outputs a reference voltage (0V in this embodiment) during
the emission period Th.
[0108] The amplitude modulator circuit 21 c2 is connected to the pulse generating circuit
21c1 so as to receive the pulse signal Sp from the pulse generating circuit 21 c1.
Further, the amplitude modulator circuit 21 c2 is connected to a plurality of pixel
signal lines UL. Each of the pixel signal lines UL is connected the upper electrodes
14 of a series of elements in the same column. For example, a pixel signal line UL1
is connected to the upper electrodes 14 of the elements D11, D21, ... and Dn1 of the
first column, a pixel signal line UL2 is connected to the upper electrodes 14 of the
elements D12, D22, ... and Dn2 of the second column, and a pixel signal line UL3 is
connected to the upper electrodes 14 of the elements D13, D23, ... and Dn3 of the
third column.
[0109] During the charge accumulation period Td, the amplitude modulator circuit 21c2 modulates
the amplitude of the pulse signal Sp according to the luminance levels of the pixels
in the selected row, and outputs the modulated signal (a voltage signal of 0V, 35V,
or 70V in this embodiment), which serves as a pixel signal Sd, to the pixel signal
lines UL (UL1, UL2, ... and ULm). During the emission period Th, the amplitude modulator
circuit 21c2 outputs, without any modulation, the reference voltage (0V) generated
by the pulse generating circuit 21c1.
[0110] The signal control circuit 100 receives a video signal Sv and a sync signal Sc and
outputs a signal for controlling the row selection circuit 21 a to the signal line
100a, a signal for controlling the signal supplying circuit 21 c to the signal line
100b, and a signal for controlling the collector voltage applying circuit 23 to a
signal line 100c based on these received signals.
[0111] The power circuit 110 outputs voltage signals to the positive electrode line 110p
and the negative electrode line 110m so that the potential of the positive electrode
line 110p is higher than the potential of the negative electrode line 110m by a predetermined
voltage (50V in this embodiment).
[0112] The focusing electrode potential applying circuit 22 is coupled to a connecting line
SL that connects all of the focusing electrodes 16. The focusing electrode potential
applying circuit 22 applies to the connecting line SL a potential Vs with respect
to the ground.
[0113] The collector voltage applying circuit 23 is connected to an interconnection line
CL coupled to the collector electrode 18 and the signal line 100c from the signal
control circuit 100. The collector voltage applying circuit 23 alternately applies
the positive first voltage Vc (= first collector voltage V1) and the second voltage
(second collector voltage V2 which is equal to the ground voltage, 0V, in this embodiment)
smaller than the first voltage Vc to the interconnection line CL based on the signal
received from the signal control circuit 100.
[0114] The operation of the circuit having the above-described structure will now be described.
At the beginning of the charge accumulation period Td starting at a particular time,
the row selection circuit 21 a outputs a selection signal Ss (70V) to the row selection
line LL1 of the first row based on the control signal from the signal control circuit
100 and outputs non-selection signals Sn (0V) to the rest of the row selection lines
LL.
[0115] As a result, the potential of the lower electrodes 12 of the elements D11, D12, D13,
... and D1m in the first row becomes the voltage (70V) of the selection signal Ss.
The potential of the lower electrodes 12 of the other elements (for example, the elements
D21, D22, ...and D2m in the second row and the elements D31, D32, ...and D3m in the
third row) becomes the voltage (0V) of the non-selection signal Sn.
[0116] At this time, the signal supplying circuit 21 c outputs pixel signals Sd (0V, 35V,
or 70V in this embodiment) to the pixel signal lines UL (UL1, UL2, ... and ULm) based
on the control signal from the signal control circuit 100, the pixel signals Sd corresponding
to the luminance level of the respective pixels constituted from the elements of the
selected row, i.e., in this case, the elements D11, D12, D13, ... and D1m in the first
row. The potential difference between the pixel signal Sd and the selection signal
Ss becomes the drive signal Vin.
[0117] For example, assuming that a 0V pixel signal Sd is supplied to the pixel signal line
UL1, the element voltage Vka (D11) which is the potential difference between the upper
electrode 14 and the lower electrode 12 of the element D11 reaches finally the aforementioned
negative predetermined voltage Vm, i.e., -70V (= 0V - 70V, a first predetermined negative
voltage). Accordingly, a large number of electrons are accumulated in the emitter
section 13 in the region near the micro through holes 14a of the element D11. Assuming
that a 35V pixel signal Sd is supplied to the pixel signal line UL2, the element voltage
Vka (D12) becomes the aforementioned negative predetermined voltage Vm, i.e., -35V
(= 35V - 70V, a second predetermined negative voltage). As a result, fewer electrons
are accumulated in the region near the micro through holes 14a of the emitter section
13 in the element D12 than in the element D11.
[0118] Further, assuming that a 70V pixel signal Sd is supplied to the pixel signal line
UL3, the element voltage Vka(D13) of the element D13 is 0V (= 70V - 70V). Thus, no
polarization reversal occurs in the emitter section 13 of the element D13. That is,
no electron is accumulated in the emitter section 13 of the element D13.
[0119] Once the row selection period Ts (which is long enough to accumulate electrons to
the selected element) has elapsed, the row selection circuit 21 a outputs a selection
signal Ss (70V) to the row selection line LL2 of the second row based on the control
signal from the signal control circuit 100 and outputs non-selection signals Sn (0V)
to the rest of the row selection lines. By this operation, the potential of the lower
electrodes 12 of the elements D21, D22, D23, ... and D2m in the second row becomes
the voltage (70V) of the selection signal Ss. The potential of the lower electrodes
12 of the rest of the elements (e.g., the elements D11 to D1m in the first row and
the elements D31 to D3m in the third row) becomes the voltage (0V) of the non-selection
signals Sn.
[0120] At this time, the signal supplying circuit 21 c outputs pixel signals Sd (voltage
signal of any of 0V, 35V, and 70V in this embodiment) to the plurality of pixel signal
lines UL (UL1, UL2, and ULm) based on the control signal from the signal control circuit
100, the pixel signals Sd corresponding to the luminance level of the respective pixels
constituted from the elements of the selected row, i.e., in this case, the elements
D21, D22, D23, ... and D2m in the second row. As a result, electrons are accumulated
in the emitter sections of the elements D21, D22, D23, ... and D2m in the second row,
in amounts corresponding to the pixel signals Sd.
[0121] Note that the element voltage Vka of the element to which the 0V non-selection signal
Sn is supplied is 0V (in this case, 0V potential of the upper electrode and 0V potential
of the lower electrode), 35V (in this case, 35V potential of the upper electrode and
0V potential of the lower electrode), or 70V (in this case, 70V potential of the upper
electrode and the 0V potential of the lower electro). However, these levels of voltage
are not sufficient for (the positive) polarization reversal in each of the elements
in which the electrons have already been accumulated. That is, the element voltage
Vka does not exceed the electron-emission threshold voltage Vth.
[0122] Further, when the row selection time Ts has elapsed, the row selection circuit 21
a outputs the selection signal Ss (70V) to the row selection line LL3 (not shown)
of the third row and outputs the non-selection signals Sn (0V) to the rest of the
row selection lines. Meanwhile, the signal supplying circuit 21c outputs pixel signals
Sd corresponding to the luminance levels of the respective pixels constituted from
the elements in the selected third row to the plurality of pixel signal lines UL.
Such an operation is repeated every row selection time Ts until all of the rows are
selected. As a result, at a predetermined time point, electrons are accumulated in
the emitter sections of all the elements in amounts (including "zero") corresponding
to the luminance levels of the respective elements. This summarizes the operation
that takes place during the charge accumulation period Td.
[0123] In order to start the emission period Th (more concretely, first electron-emission
period), the row selection circuit 21 a applies a large negative voltage (in this
embodiment, the applied voltage is -200V, i.e., the difference between +50V generated
by the power circuit 110 and -250V generated by the pulse generator 21 b) to all of
the row selection lines LL. Meanwhile, the signal supplying circuit 21 c outputs the
reference voltage (0V), which is generated by the pulse generating circuit 21c1, through
the amplitude modulator circuit 21c2 without modulation to all of the pixel signal
lines UL. As a result, the potential of the upper electrodes 14 of all the elements
becomes the reference voltage (0V).
[0124] Thus, the drive voltage Vin applied to all the elements is set at the first voltage
Vp1 (= 200V). Therefore, the positive-side polarization reversal is caused in each
of the emitter sections 13 of the elements and the electrons accumulated in each of
the emitter sections 13 of the elements are partly emitted concurrently by Coulomb
repulsion. This causes the phosphors disposed above the elements to emit light and
to thereby display images. Note that in the emitter section of the elements, to which
a zero voltage Vin between the upper and the lower electrodes was applied during the
charge accumulation period Td, and therefore, which have not accumulated electrons,
no negative-side polarization reversal has occurred. Thus, no positive-side polarization
reversal occurs even when the voltage Vin between the upper and lower electrodes is
set at the large positive voltage. Accordingly, for example, the element that is not
required to emit light for the purpose of producing a particular image at a particular
timing does not consume excess energy that accompanies the polarization reversal.
[0125] After the first electron-emission period, the row selection circuit 21 a applies
a large negative voltage (in this embodiment, -300V, which is a difference between
+50V generated by the power circuit 110 and -350V generated by the pulse generator
21 b) to all the row selection lines LL. The signal supplying circuit 21c outputs
the reference voltage (0V) generated by the pulse generating circuit 21c1 via the
amplitude modulator circuit 21 c2 without modulation to all the pixel signal lines
UL. As a consequence, the potential of the upper electrodes 14 of all the elements
becomes the reference voltage (0V).
[0126] Thus, the drive voltage Vin applied to all the elements is set at the second voltage
Vp2 (= 300V). Therefore, the dipoles, that have not undergone (completed) the positive-side
polarization reversals during the first electron-emission period, undergo the positive-side
polarization reversals. Thus, the rest of electrons in the emitter section 13 are
emitted concurrently by Coulomb repulsion. This causes the phosphors disposed above
the elements to emit light and to thereby display images.
[0127] As described above, during the charge accumulation period Td, the drive voltage applying
circuit 21 consecutively (sequentially) sets the drive voltage Vin for the plurality
of elements at the predetermined negative voltage one after next. Upon completion
of electron accumulation in all the elements, the drive voltage applying circuit 21
simultaneously sets the drive voltage Vin for all the elements at the first voltage
Vp1, which is the predetermined positive voltage to cause concurrent electron emission
from all of the elements, and subsequently, at the second voltage Vp2, which is the
predetermined positive voltage to cause concurrent electron emission from all of the
elements. After the predetermined emission period Th has elapsed, the drive voltage
applying circuit 21 again starts the charge accumulation period Td.
[0128] As explained above, the electron emitting apparatus 10 according to the first embodiment
of the present invention comprises the drive voltage applying circuit 21 which applies
between the lower electrode 12 and the upper electrode 14 the drive voltage Vin to
cause the element voltage Vka, which is the potential of the upper electrode 14 relative
to (or with respect to) the potential of the lower electrode 12, to reach the negative
voltage Vm2 (Vm) and thereafter to reach the positive voltage. Further, the drive
voltage applying circuit 21 is configured as to stepwise increase the positive voltage
(to the first voltage Vp1 during the first electron-emission period and to the second
voltage Vp2 larger than the first voltage Vp1 during the second electron-emission
period).
[0129] Thus, upon causing the element voltage Vka to be at the negative voltage, the electrons
are accumulated to the emitter section. Then, the accumulated electrons are emitted
every stepwise increase in the element voltage Vka.
[0130] In other words, the electrons accumulated in the emitter section 13 per one electron-accumulation
(during the each electron-accumulation period Td) are emitted at a plurality of times
via the micro through holes 14a of the upper electrode 14. Thus, even if the absolute
value of the negative voltage applied to the element voltage Vka during the electron
accumulation period Td is large and a large number of electrons are accumulated in
the emitter section, the amount of electrons emitted by each one operation of the
electron-emission is smaller than that of the conventional case. As a result, since
large inrush current does not flow through the electron emitting apparatus 10, the
deterioration of the element due to the heating is avoided and the total amount of
emitted electrons (electron emission total amount) during the predetermined period
T increases. Further, the dipoles in the emitter section 13 rotate only once (i.e.
reverses twice) during the period from one electron accumulation operation to completion
of emitting electrons accumulated in the one electron accumulation (during the predetermined
period T). Therefore, since the number of polarization reversal does not increase,
the deterioration of the elements is suppressed.
[0131] In addition, in general, if and when an excessively large amount of electrons collide
with the phosphor 19 , the part of energy of the electrons changes to the heat and
thus the amount of emission light from the phosphor is not increased. On the other
hand, after ending the collision of electrons, the phosphor 19 still emits light (remaining
light) whose amount decreases in accordance with the time elapse. Thus, the phosphor
19 can emit light with high efficiency, if electrons whose amount is proper in that
a part of energy of the electrons does not change to the heat are caused to collide
with the phosphor 19, and then the collision of electrons is stopped, and then the
electrons are caused to collide with the phosphor 19 again at the proper timing when
an amount of light (remaining light, persistent light) becomes small.
[0132] Therefore, as the electron-emitting apparatus according to the first embodiment,
a large amount of emission light is generated with small power-consumption by repeating
the electron emission for a short period a plurality of times and causing the emitted
electrons to collide with the phosphor, while suppressing an amount of emitted electrons
for each of the electron emissions. That is, a large part of energy of the electrons
does not change to the heat and the remaining light of the phosphor can be utilized.
As a result, it is possible to provide a display device showing a clear image or a
light-emitting device capable of emitting a large amount of light.
[0133] Further, in the first embodiment, the predetermined potential (Vs) is applied to
the focusing electrodes. Therefore, the electrons emitted from each of the upper electrodes
14 of the elements are irradiated only to the phosphor existing on the direct upper
portion of the upper electrode 14. As a consequence, clear image is provided.
[0134] Moreover, the collector voltage applying circuit 23 applies the voltage Vc to the
collector electrode 18 during the collector voltage applying period, and further applies
the voltage (e.g., 0V) smaller than the voltage Vc to the collector electrode 18 during
the collector voltage non-applying period. Thus, during the electron emission period
Th, the electric field generated by the collector electrode allows the electrons emitted
via the micro through holes 14a of the upper electrode 14 from the emitter section
13 to collide with the phosphor 19 certainly. Further, the electric field generated
by the collector electrode accelerates the electrons by applying the energy to the
emitted electrons, thereby increasing the amount of emission light of the phosphor
19. In addition, only the electrons emitted during the electron emission period Th
are certainly led toward the phosphor 19 and it can be avoided that the electrons
emitted during the electron accumulation period Td reach the phosphor 19.
(Second embodiment)
[0135] An electron-emitting apparatus according to a second embodiment of the present invention
will now be described. The electron-emitting apparatus according to the second embodiment
is different from the electron-emitting apparatus 10 according to the first embodiment
only in that the apparatus according to the second embodiment alters the drive voltage
Vin differently from the drive voltage Vin in the electron-emitting apparatus 10 according
to the first embodiment. Therefore, the different point is mainly described hereinafter.
[0136] Similarly to the drive voltage applying circuit 21 according to the first embodiment,
as shown in Fig. 17(A), the drive voltage applying circuit 21 according to the second
embodiment applies, between the lower electrode 12 and the upper electrode 14 (to
inter-electrodes), the drive voltage Vin for setting the element voltage Vka at the
negative voltage Vm2 during the electron accumulation period Td starting from the
time t1. Thus, the electrons are accumulated in the region near the micro through
holes 14a of the emitter section 13.
[0137] Further, at the time t2 when the electron accumulation period Td passes, the drive
voltage applying circuit 21 according to the second embodiment applies to the inter-electrodes
the drive voltage Vin (i.e., first predetermined voltage Vp1) which sets the element
voltage Vka at the predetermined positive voltage (first voltage) Vp1. Thus, the positive-side
polarization reversal is caused and the first electron-emission occurs.
[0138] At a time t21 at which the first electron-emission is completed when a predetermined
time (first electron-emission period) elapses from the time t2, the drive voltage
applying circuit 21 applies the drive voltage Vin (i.e., third voltage Vp3) to the
inter-electrodes to cause the element voltage Vka to become the third voltage Vp3.
The third voltage Vp3 is a voltage which is smaller than the first voltage Vp1 and
which does not cause the element to accumulate electrons in the emitter section 13.
[0139] Just before the end of the first electron-emission period (time t21), a large part
of dipoles designed to undergo the positive-side polarization reversal by setting
the element voltage Vka at the first voltage Vp1 actually have completed the positive-side
polarization reversal. However, a part of such dipoles have not undergone the positive-side
polarization reversal or are just undergoing the reversal.
[0140] Therefore, if the element voltage Vka is promptly changed to a voltage larger than
the first voltage Vp1 at the time t21 or at the time t3 just after the time t21, next
electron-emission (second electron-emission) may start without the interrupt (halt)
of electron emission. Such continuous electron-emission is not preferable for a device
(e.g., a display device) which requires the electron emission at a predetermined timing
only.
[0141] On the contrary, the drive voltage applying circuit 21 according to the second embodiment
temporarily stops the polarization reversal so as to completely stop the electron
emission by temporarily keeping the element voltage Vka to the third voltage Vp3,
without increasing immediately the element voltage Vka just after the first electron-emission
period. That is, as shown in a graph of the characteristics between the voltage and
the polarization of the emitter section 13 in Fig. 17(B), the drive voltage applying
circuit 21 changes the element state from a point p7 to a point p8. As will be understood
with reference to the graph, there is no difference between the amount of charges
(amount of electrons) kept by the emitter section 13 at the point p7 and the amount
of charges (amount of electrons) kept by the emitter section 13 at the point p8. In
other words, even if the element state changes from the point p7 to the point p8,
the electrons are kept unchanged in the emitter section 13 and are not emitted.
[0142] Thereafter, at the time t3 when a short time elapses from the time t21, the drive
voltage applying circuit 21 then applies to the inter-electrodes the drive voltage
Vin (i.e., second voltage Vp2) for setting the element voltage Vka at the second voltage
Vp2 larger than the first voltage Vp1. As a result, the dipoles that have not completed
the positive-side polarization reversal start the positive-side polarization, and
thus, the electrons remaining in the region near the micro through holes 14a of the
emitter section 13 begins to be emitted. In other words, the second electron-emission
is performed.
[0143] As explained above, in the electron-emitting apparatus according to the second embodiment,
the drive voltage applying circuit 21 is configured to temporarily set the element
voltage Vka at the voltage (the third voltage) Vp3 which is smaller than the first
voltage Vp1 and which does not cause the element 10 to accumulate the electrons in
the emitter section 13, upon increasing the potential (the element voltage Vka) of
the upper electrode 14 with respect to the potential of the lower electrode 12 from
the first voltage Vp1 as the positive voltage to the second voltage Vp2 larger than
the first voltage Vp1 for the purpose of electron emission.
[0144] In other words, an apparatus according to the second embodiment comprises drive voltage
applying means (circuit) 21 for applying a drive voltage Vin between the lower electrode
and the upper electrode (the inter-electrodes) in such a manner that the drive voltage
Vin causes the element voltage Vka to reach the negative voltage Vm2 in order that
electrons are accumulated in the emitter section 13, and then causes the element voltage
Vka to reach the positive voltage in order that the accumulated electrons are emitted.
[0145] The drive voltage applying circuit 21 is configured to apply, as the drive voltage
Vin for causing the element voltage Vka to reach the positive voltage between the
lower electrode and the upper electrode, a voltage which includes a plurality of pulses
(pulse waveforms) generated intermittently, each of the pulses whose maximum value
being not less than the maximum value of the immediately preceding pulse so that the
maximum values of the pulses are on the increase (e.g., the drive voltage Vin of the
time period t2~t21 and t3~t4 in Fig. 17), and the voltage becomes levels to keep the
element voltage Vka at which no electron accumulation in the emitter section is caused
during each interval between successive pulses (the time period t21~t3).
[0146] With the configuration above, electrons are emitted at a certain timing within a
period during which a pulse is applied (i.e., at the timing at which positive polarization
reversal starts due to the increase in the element voltage Vka). Further to that,
it is possible to certainly provide a period Tp3 (time t21~t3) during which the electron-emission
is prevented between two successive electron-emission periods (the interval between
successive two pulses). As a consequence, the electrons can be emitted at the timing
corresponding to the requirements of a display to which the electron-emitting apparatus
is applied. That is, it is possible that the frequency for electron emission substantially
increases.
[0147] Furthermore, with the drive voltage changed in this way, it is possible to reduce
power consumption in the element by the amount corresponding to the area defined by
a curve connecting the point p7, the point p8, and the point p1 of Fig. 17(B).
(Third embodiment)
[0148] Next, an electron-emitting apparatus according to the third embodiment of the present
invention will be described. The electron-emitting apparatus according to the third
embodiment is different from the electron-emitting apparatus 10 according to the first
embodiment only in that the apparatus according to the third embodiment alters the
drive voltage Vin differently from the drive voltage Vin in the electron-emitting
apparatus 10 according to the first embodiment. Therefore, the different point is
mainly described hereinafter.
[0149] Referring to Fig. 18, similarly to the drive voltage applying circuit 21 according
to the first embodiment, the drive voltage applying circuit 21 according to the third
embodiment applies between the lower electrode 12 and the upper electrode 14 (to the
inter-electrodes) the drive voltage Vin for setting the element voltage Vka to the
negative voltage Vm2 during the electron accumulation period Td starting from the
time t1. Thus, the electrons are accumulated in the region near the micro through
holes 14a of the emitter section 13.
[0150] Further, at the time t2 when the electron accumulation period Td elapses, the drive
voltage applying circuit 21 according to the third embodiment increases the drive
voltage Vin (i.e., element voltage Vka) gradually and stepwise every predetermined
time. Specifically, at the time t2 when the electron accumulation period Td elapses,
the drive voltage applying circuit 21 makes the drive voltage Vin to keep a fourth
voltage Vp4 which is the positive voltage for a predetermined period, and subsequently
makes the drive voltage Vin to keep a fifth voltage Vp5 (Vp1>Vp5>Vp4) which is the
positive voltage for a predetermined period. In this case, the fourth voltage Vp4
and the fifth voltage Vp5 are selected to be values by which the positive-side polarization
reversal is not caused, i.e., voltages smaller than the electron emission threshold
voltage Vth (thus, the voltage being smaller the positive coercive electric field
voltage Vd). Therefore, when the element voltage Vka becomes the fourth voltage Vp4
and the fifth voltage Vp5, the electrons are not emitted. Thereafter, the drive voltage
applying circuit 21 sets the drive voltage Vin at the first voltage Vp1 throughout
the first period, and subsequently sets the drive voltage Vin at the second voltage
Vp2 throughout the second period. Thus, the first electron-emission is performed within
the first period and the second electron-emission is performed within the second period.
[0151] As mentioned above, the electron-emitting apparatus according to the third embodiment
applies the drive voltage Vin to the inter-electrodes so as to stepwise increase the
element voltage Vka before the element voltage Vka reaches the voltage necessary for
starting the electron emission after the electron accumulation.
[0152] Thus, similarly to the first and second embodiments, the electrons which are accumulated
once are emitted separately at a plurality of times, and therefore the total amount
of emitted electrons can be increased without reducing the lifetime of the element
10. Further, although the drive voltage Vin stepwise but gradually increases. Thus,
the element voltage Vka follows the drive voltage Vin. Therefore, the polarization
reversal and the electron emission occur when the difference between the drive voltage
Vin and the element voltage Vka is small. As a consequence, the power consumption
(Joule heat) at the resistance of the element, the resistance near the element and
the circuit resistance is reduced.
[0153] Thus, since the element is not heated, the change in characteristics of the emitter
section 13 due to the heat is avoided. Further, since the element temperature is not
high, the generation of gas consisting of materials absorbed to the element is avoided.
As a result, the generation of plasma is prevented and therefore the excessive emission
of electrons (generation of large light-emission) and the damage on the element due
to the ion bombardment are avoided.
(Fourth embodiment)
[0154] Next, a description is given of an electron-emitting apparatus according to a fourth
embodiment of the present invention. The electron-emitting apparatus according to
the fourth embodiment is different from the electron-emitting apparatus 10 according
to the first embodiment,
in that the drive voltage Vin is changed differently from the drive voltage Vin is
changed in the electron-emitting apparatus 10. Therefore, the different point is mainly
described hereinafter.
[0155] Similarly to the drive voltage applying circuit 21 according to the first embodiment,
the drive voltage applying circuit 21 according to the fourth embodiment applies the
drive voltage Vin, for setting the element voltage Vka at the negative voltage Vm2
during the electron accumulation period Td from the time t1 to t2, between the upper
and lower electrodes, as shown in Fig. 19. Thus, electrons are accumulated in the
region near the micro through holes 14a of the emitter section 13.
[0156] Further, the drive voltage applying circuit 21 according to the fourth embodiment
applies the drive voltage Vin (i.e., fourth voltage Vp4) for setting the element voltage
Vka at the fourth voltage Vp4 (in the example, Vp4=0) between the upper and lower
electrodes during the period from the time t2 to the time t3. That is, the drive voltage
applying circuit 21 sets the drive voltage Vin at the fourth voltage Vp4. The fourth
voltage Vp4 is a value at which the positive-side polarization reversal is not caused,
i.e., a value smaller than the electron emission threshold voltage Vth, preferably,
a voltage having the level smaller than the coercive electric field voltage Va.
[0157] Subsequently, the drive voltage applying circuit 21 sets the drive voltage Vin at
a first lower voltage Vp1.1 during a period (first electron-emission period Tp1.1)
from the time t3 to t4. The first lower voltage Vp1.1 is larger than the positive
coercive electric field voltage Vd, and is not less than the electron emission threshold
voltage Vth. Consequently, as shown by emission electron current I in Fig. 19, electrons
are emitted during a period from the time immediately after the time t3 to the time
t4.
[0158] Then, the drive voltage applying circuit 21 applies the drive voltage Vin (i.e.,
third voltage Vp3) for setting the element voltage Vka at a third voltage Vp3 during
a period from the time t4 to t5 (third-voltage-setting period Tp3, i.e., electron
holding period Tp3) between the upper and lower electrodes. The third voltage Vp3
is a voltage which is smaller than the first lower voltage Vp1.1 and which prevents
the operation for accumulating electrons to the emitter section 13 by the electron-emitting
apparatus 10. The third-voltage-setting period Tp3 is set to be a period longer than
the first electron-emission period Tp1.1.
[0159] Subsequently, the drive voltage applying circuit 21 sets the drive voltage Vin at
a first higher voltage Vp1.2 for a period (second electron-emission period Tp1.2)
from the time t5 to t6. The first higher voltage Vp1.2 is larger than the first lower
voltage Vp1.1. Therefore, the first higher voltage Vp1.2 is larger than the positive
coercive electric field voltage Vd and is larger than the electron emission threshold
voltage Vth. As a result, since the dipoles, which have not yet completed the positive-side
polarization reversal, start the positive-side polarization reversal, the electrons
remaining in the region near the micro through hole 14a of the emitter section 13
are emitted via the micro through hole 14a. That is, the electrons are emitted again
during a period from the time immediately after time t5 to the time t6.
[0160] The drive voltage applying circuit 21 applies the drive voltage Vin for setting again
the element voltage Vka at the third voltage Vp3 between the upper and lower electrodes
during a period from the time t6 to t7 (third-voltage-setting period Tp3, i.e., electron
holding period Tp3). The third-voltage-setting period Tp3 is set to be a period longer
than the second electron-emission period Tp1.2.
[0161] Further, the drive voltage applying circuit 21 sets the drive voltage Vin at the
second voltage Vp2 for a period (third electron-emission period Tp2) from the time
t7 to t8. The second voltage Vp2 is larger than the first higher voltage Vp1.2. Consequently,
since the dipoles, which have not yet completed the positive-side polarization reversal,
start the positive-side polarization reversal, the electrons remaining in the region
near the micro through holes 14a of the emitter section 13 are emitted via the micro
through holes 14a. That is, the third electron-emission is performed.
[0162] Thereafter, the drive voltage applying circuit 21 sets the drive voltage Vin at a
sixth voltage Vp6 (in the example, Vp6=0) during a period from the time t8 to t9.
The sixth voltage Vp6 is a voltage between the positive coercive electric field voltage
Vd and the negative coercive electric field voltage Va.
[0163] At the time t9, similarly to the time t1, the drive voltage applying circuit 21 sets
the drive voltage Vin at the negative voltage Vm2. Thus, the operation during the
electron accumulation period Td restarts. In other words, the period from the time
t1 to the time t9 corresponds to one period T of accumulation and emission of electrons.
[0164] It should be noted that, preferably, the third electron-emission period Tp2 is set
to a period longer than the first electron-emission period Tp1.1 and the second electron-emission
period Tp1.2. In other words, preferably, among a plurality of voltage pulses (voltage
having a pulse waveform) for emitting electrons that are generated in a period from
"the time point (time t2) at which the electron accumulation period Td starting from
the time t1 shown in Fig. 19 has elapsed" to "the time point (time t9) at which the
next electron-accumulation operation starts (time point for restarting the electron
accumulation operation)", a voltage pulse which is generated just before the time
t9 which is the time point for restarting the electron accumulation operation (this
voltage pulse is referred to as "voltage pulse finally generated" or "final voltage-pulse")
has a pulse width (pulse duration) which is the widest in the plurality of voltage
pulses generated during the period from the time t2 to the time t9. That is, it is
preferable that relationships of TP2>Tp1.1 and TP2>Tp1.2 be established.
[0165] Such a voltage pulse (the final voltage-pulse) generated just before the restart
time (time t9) of the electron accumulation operation can stabilize the status of
the polarization of the emitter section, which is disturbed by applying voltage pulses
plural times.
[0166] Further, if the pulse width (Tp1.1 and/or Tp1.2) of the voltage pulse generated before
the final voltage-pulse is longer, the leakage of electrons to the upper electrode
14 may occur. As a result, the total amount of emission electrons may be reduced.
On the other hand, the final voltage-pulse is to be a pulse for emitting all the electrons
accumulated in the emitter section. In other words, there is no voltage pulse generated
for electron emission after the final voltage-pulse without providing the period (time
t9 to t10) for accumulating the electrons. Therefore, even if the leakage of electrons
to the upper electrode 14 occurs by elongating the pulse width Tp2 of the final voltage-pulse,
the leakage does not influence on the electron emission after the final voltage-pulse.
[0167] Note that the above-mentioned technique in which the final voltage-pulse width is
set maximum among the pulse widths of the plural voltage pulses generated during the
period (time t3 to t8) of the one-time electron-emission operation can be applied
to the other embodiments of the present invention.
[0168] As mentioned above, according to the fourth embodiment, the electron-emitting apparatus
comprises the drive voltage applying means (circuit) 21 for applying the drive voltage
Vin between the lower electrode and the upper electrode, wherein the voltage Vin is
for enabling the element voltage Vka to reach the negative voltage Vm2 so as to accumulate
electrons in the emitter section 13 of the element, and thereafter for enabling the
element voltage Vka to reach the positive voltage so as to emit the accumulated electrons.
[0169] The drive voltage applying circuit 21 applies, between the upper and lower electrodes,
as the drive voltage Vin for enabling the element voltage Vka to reach the positive
voltage, a voltage (the drive voltage Vin during the period of the time t3 to t4,
time t5 to t6, and time t7 to t8) which has a plurality of pulse waveforms intermittently
generated. The maximum values of the pulse waveforms (peak values of voltage pulses)
increase while each of the maximum values has a value not less the maximum value of
the just-before pulse waveform (i.e., the peak value of the voltage pulse generated
just previously). The voltage applied by the drive voltage applying circuit 21 includes
a voltage level for making the element voltage Vka be a voltage Vp3 which prevents
the electron accumulation to the emitter section 13 during the period of continuous
pulse waveforms (time t4 to t5 and time t6 and t7).
[0170] Thus, at a predetermined timing within a period during which the voltage (voltage
pulse) of pulse waveform is applied (i.e., at a starting timing of the positive-side
polarization reversal as a result of increasing the element voltage Vka), electrons
start to be emitted. Further, it is possible to certainly provide the period Tp3 which
prevents the electron emission during the successive two-time electron emission (during
the two successive voltage pulses). As a consequence, it is possible to emit electrons
at the timing in response to the request of a display to which the electron-emitting
apparatus is applied. That is, it is possible to substantially increase the frequency
for emitting electrons.
[0171] Further, by altering the drive voltage as mentioned above, it is possible to reduce
power consumption in the element by the amount corresponding to the area surrounded
by the curve connecting the points p7, p8, and p1 shown in Fig. 17(B).
[0172] When the level (the absolute values) of the voltage Vp3 is smaller than the positive
coercive electric field voltage Vd, the emission of electrons are not caused, and
electrons are kept in the emitter section. However, actually, the voltage larger than
the coercive electric field voltage (|Va|) of the emitter section 13 is continuously
applied between the upper and lower electrodes, the electrons may move on the surface
of the emitter section 13, so that the electrons can be leaked to the portions of
the upper electrode 14 which are in contact with the emitter section 13. As a result,
the amount of accumulated electrons may be reduced.
[0173] Thus, it is preferable that the level of the voltage Vp3 be set at a level smaller
than the level (|Va|) of the coercive electric field voltage of the emitter section
13.
[0174] If the voltage Vp3 is set as mentioned above (if the level of the voltage Vp3 is
set at a level smaller than the level (|Va|)), the above-mentioned leakage of electrons
to the upper electrode 14 is avoided, and no polarization reversal in the emitter
section 13 occurs. Thus, the electrons accumulated in the emitter section 13 can be
certainly kept in the emitter section 13.
[0175] Further, preferably, the level of the voltage Vp3 is 1/4 or less of the coercive
electric field voltage (|Va|) of the emitter section 13. More preferably, the level
of the voltage Vp3 is 1 /10 or less of the coercive electric field voltage (|Va|)
of the emitter section 13. Most preferably, the level of the voltage Vp3 is 0V. As
the level of the voltage Vp3 is smaller, the area surrounded by the curve connecting
the points p7, p8, and p1 shown in Fig. 17(B) is larger. Therefore, the power consumed
in the element can be reduced by a larger amount.
[0176] In order to set the voltage Vp3 to be 0V, the upper electrode 14 and the lower electrode
12 may be short-circuited. The short-circuit operation includes the connection between
the upper electrode 14 and the lower electrode 12 via a lead or a resistor having
a resistance having a predetermined level. When the voltage Vp3 is set to be 0V as
above, a power supply circuit (i.e., a power supply for voltage Vp3) for generating
a predetermined voltage other than 0V to provide the voltage Vp3 is not necessary
and the drive voltage applying circuit 21 is therefore simplified.
[0177] Note that the technique for the voltage Vp3 above can be applied to the other embodiments.
[0178] In addition, during the electron holding period Tp3 (i.e., interval between successive
pulse waveforms), a connection between the upper and lower electrodes may be opened.
In this case, since it is not necessary to have a separate voltage source for voltage
Vp3, the drive voltage applying circuit 21 can also be simplified.
[0179] Further, according to the fourth embodiment, the period from the start of rising
(the increase start-timing) to the end of falling (the reduction end-timing) of the
each pulse (pulse waveforms) (Tps, i.e., periods of the time t3 to t4, time t5 to
t6, and time t7 to t8, in other words, width of voltage pulse) is set to be shorter
than the period from the end of falling of the pulse to the start of rising of the
next pulse (Trs, i.e., periods of the time t4 to t5 and time t6 to t7, in other words,
voltage pulse rest period between the successive voltage pulses, serving as the electron
holding period Tp3).
[0180] With this arrangement, since it is possible to reduce the time for applying the voltage
larger than the coercive electric field voltage between the upper and lower electrodes,
an amount of the above-mentioned leakage of electrons to the upper electrode 14 can
be reduced. As a consequence, the total amount of emission electrons can be increased.
In this case, preferably, the time Tps is 1/2 or less than the time Trs and, more
preferably, 1/5 of the time Trs.
[0181] Further, according to the fourth embodiment, the electron-emitting apparatus comprises
the phosphor(s) 19 and the time Tps is shorter than the time Trs. Thus, the persistent
light of the phosphor(s) 19 is effectively used. As a result, a large amount of emission
light can be obtained while keeping the energy for electron emission lower.
[0182] In addition, as seen from the time t8 to t9, the drive voltage Vin is set at the
sixth voltage Vp6 after completing the last electron-emission. Therefore, as compared
with the case where the drive voltage Vin is immediately changed to the negative voltage
Vm2 at the time t8, the inrush current flowing through the element can be reduced.
As a consequence, the abnormal occurrence of electron emission can be avoided.
[0183] Note that the final voltage-pulse (voltage for the time t7 to t8) during the period
from the time t1 to the time t9 is excluded from the voltage pulse to which the above-mentioned
operation (technique) for "setting the time (Tps) from the start of rising to the
end of falling of the voltage pulse to be shorter than the time (Trs) from the end
of falling of the voltage pulse to the start of the rising of the next voltage pulse"
is applied.
(Fifth embodiment)
[0184] Next, a description is given of an electron-emitting apparatus according to a fifth
embodiment of the present invention. The electron-emitting apparatus according to
the fifth embodiment is different from the electron-emitting apparatus 10 according
to the first embodiment,
in that drive voltage Vin changes differently from the drive voltage Vin is changed
in the electron-emitting apparatus 10. Therefore, the different point is mainly described
hereinafter.
[0185] Similarly to the drive voltage applying circuit 21 according to the first embodiment,
the drive voltage applying circuit 21 according to the fifth embodiment, as shown
in Fig. 20, applies the drive voltage Vin, for setting the element voltage Vka at
the negative voltage Vm2 during the electron accumulation period Td from the time
t1 to t2, between the upper and lower electrodes. Thus, electrons are accumulated
in the region near the micro through holes 14a of the emitter section 13.
[0186] Further, the drive voltage applying circuit 21 according to the fifth embodiment
sets the drive voltage Vin at the fourth voltage Vp4 (in the example, Vp4=0) during
the period from the time t2 to t3.
[0187] Subsequently, the drive voltage applying circuit 21 sets the drive voltage Vin at
the first voltage Vp1 during the first electron-emission period Tp1(1) from the time
t3 to t4. Consequently, as shown by emission electron current I in Fig. 20, electrons
are emitted just after the time t3.
[0188] Then, the drive voltage applying circuit 21 applies, between the upper and lower
electrodes, the drive voltage Vin (i.e., third voltage Vp3) for setting the element
voltage Vka at the third voltage Vp3 during the period from the time t4 which is a
timing before emitting all electrons to be emitted in the case of continuously applying
the first voltage Vp1 between the upper and lower electrodes, to the time t5 which
is a timing at which a (first) third-voltage-setting period Tp3(1) has elapsed. Consequently,
at the time t4, the electron emission immediately stops (refer to the electron emission
current I). The first third-voltage-setting period Tp3(1) is set to be longer than
the first electron-emission period Tp1(1).
[0189] Subsequently, the drive voltage applying circuit 21 sets again the drive voltage
Vin at the first voltage Vp1 during the second electron-emission period Tp1(2) from
the time t5 to t6. Thus, dipoles which have not completed the positive-side polarization
reversal during the first electron-emission period Tp1(1), starts the positive-side
polarization reversal. Therefore, the electrons are emitted again via the micro through
holes 14a. Then, just before the time t6, all dipoles which can undergo the positive-side
polarization reversal under the first voltage Vp1 serving as the drive voltage Vin
complete the polarization reversal. As a result, the electron emission temporarily
stops.
[0190] Further, the drive voltage applying circuit 21 applies, between the upper and lower
electrodes, the drive voltage Vin (i.e., third voltage Vp3) for setting the element
voltage Vka at the third voltage Vp3 during a (second) third-voltage-setting period
Tp3(2) from the time t6 to t7. Thus, after the time t6, the electron emission certainly
stops. The second third-voltage-setting period Tp3(2) is set to be longer than the
second electron-emission period Tp1 (2).
[0191] Further, the drive voltage applying circuit 21 sets the drive voltage Vin at the
second voltage Vp2 (>Vp1, Vp2 being larger than Vp1) during a third electron-emission
period Tp2(1) from the time t7 to t8. Consequently, dipoles which have not completed
the positive-side polarization reversal, starts the positive-side polarization reversal
and the electrons remaining in the region near the micro through holes 14a of the
emitter section 13 are therefore emitted via the micro through holes 14a. That is,
the third electron-emission is performed.
[0192] The drive voltage applying circuit 21 applies, between the upper and lower electrodes,
the drive voltage Vin (i.e., third voltage Vp3) for setting the element voltage Vka
at the third voltage Vp3 during the period from the time t8 which is a timing before
emitting all electrons to be emitted in the case of continuously applying the second
voltage Vp2 between the upper and lower electrodes, to the time t9 at which a (third)
third-voltage-setting period Tp3(3) has elapsed. As a result, at the time t8, the
electron emission immediately stops. The third third-voltage-setting period Tp3(3)
is set to be longer than the third electron-emission period Tp2(1).
[0193] Subsequently, the drive voltage applying circuit 21 again sets the drive voltage
Vin at the second voltage Vp2 during a fourth electron-emission period Tp2(2) from
the time t9 to t10. Consequently, dipoles which have not completed the positive-side
polarization reversal during the third electron-emission period Tp2(1), start the
positive-side polarization reversal. Therefore, the electrons are emitted again via
the micro through holes 14a. Then, just before the time t10, all dipoles complete
the positive-side polarization reversal. As a result, all the electrons accumulated
in the emitter section 13 are emitted. Simultaneously, the dipoles of the emitter
section 13 are aligned in the same direction. That is, the polarization of the emitter
section 13 becomes stable.
[0194] Thereafter, the drive voltage applying circuit 21 applies, between the upper and
lower electrodes, the drive voltage Vin (i.e., sixth voltage Vp6) for setting the
element voltage Vka at the sixth voltage Vp6 (in the example, Vp6=0) during the period
from the time t10 to t11.
[0195] Then, at the time t11, the drive voltage applying circuit 21 applies, between the
upper and the lower electrodes, the drive voltage Vin for setting the element voltage
Vka at the negative voltage Vm2, similarly to the time t1. Thus, the electron accumulation
period Td restarts. In other words, the period from the time t1 to t11 corresponds
to one period T of accumulation and election of electrons.
[0196] As mentioned above, the drive voltage applying circuit (means) 21 according to the
fifth embodiment applies, between the upper and lower electrodes, a voltage, serving
as the drive voltage which makes the element voltage Vka reach the positive voltage
for emitting electrons, which has a plurality of pulse waveforms generated intermittently,
which increases the maximum values of the pulse waveforms in such a manner that each
one of the maximum values of the pulse waveforms is equal to or larger than the maximum
value of the other pulse waveform that appears just previously (i.e., drive voltage
Vin during the period from the time t3 to t4, time t5 to t6, time t7 to t8, and time
t9 to t10), which allows the element voltage Vka to reach the voltage Vp3 for preventing
the accumulation of electrons to the emitter section 13 during the intervals of successive
two pulse waveforms (periods from the time t4 to t5, t6 to t7, and t8 to t9).
[0197] Thus, similarly to the fourth embodiment, it is possible to provide an electron-emitting
apparatus in which the power consumption is low and the total amount of emission electrons
is increased. Further, since the voltage Vp3 is set to be smaller than the coercive
electric field voltage (|Va|), the leakage of accumulated electrons is prevented.
[0198] In addition, in the drive voltage applying circuit 21 according to the fifth embodiment,
at least one of the above-mentioned pulses (e.g., waveform during the time t3 to t4
or the time t7 to t8) is a pulse which starts to decrease to stop the electron emission
before the accumulated electrons are emitted completely under the drive voltage whose
level is determined by the one pulse.
[0199] Therefore, upon applying two or more pulse waveforms having the same maximum voltage
each other (e.g., the voltage, whose maximum value is Vp1, during the period from
the time t3 to t4 and the voltage, whose maximum value is also Vp1, during the period
from the time t5 to t6), the electron emission is performed plural times. In other
words, it is not necessary to generate a large number of pulse waveforms having different
maximum values each other in order to obtain the electron emission many times.
[0200] Further, since the voltage of some of the pulse waveforms is reduced during the electron
emission, the width of the pulse waveform (e.g., period Tp1(1) from the time t3 to
t4 and the period Tp2(1) from the time t7 to t8) is reduced. Consequently, the frequency
for electron emission is increased, and the persistent light of the phosphor(s) 19
is effectively used.
[0201] Preferably, the period Tp1(2) is longer than the period Tp1(1) and the period Tp2(2)
is longer than the period Tp2(1). That is, when applying the voltage of the pulses
(pulse waveforms) having the same maximum value each other to the element plural times
so as to emit the electrons, it is preferable that the width (e.g., Tp1 (2)) of the
second or later pulse (waveform) generated after the first pulse (waveform) is set
to be larger than the width (Tp1(1)) of the first pulse (waveform).
[0202] The reason for the above is that, the electrons accumulated can be emitted even if
the width of the first pulse waveform is relatively shorter, because the amount of
electrons accumulated when applying the first pulse waveform is larger. In addition,
the electron emission by the first pulse reduces the amount of electrons remaining
in the emitter section 13, and thus, the width of the pulse waveform after the first
pulse should be elongated in order to emit certainly the electrons when applying the
pulse after the first pulse.
[0203] As mentioned above with respect to the fourth embodiment, it is also preferable in
the fifth embodiment that the pulse width Tp2(2) of the final voltage-pulse be set
to be longer than the pulse widths (i.e., Tp1(1), Tp1(2) and Tp2(1)) other than the
pulse width Tp2(2).
(Sixth embodiment)
[0204] Next, a description is given of an electron-emitting apparatus according to a sixth
embodiment of the present invention. The electron-emitting apparatus according to
the sixth embodiment is different from the electron-emitting apparatus 10 according
to the first embodiment,
in that the drive voltage applying circuit 21 according to the first embodiment is
replaced by a drive voltage applying circuit 25 shown in Fig. 21. Therefore, the different
point is mainly described hereinafter.
[0205] The drive voltage applying circuit 25 comprises: a switching circuit (switching element)
25a; a switching pulse generating circuit 25b serving as switching control means together
with the switching circuit 25a; a constant-voltage source (keeping-voltage generating
source) 25c; a sinusoidal wave generating circuit 25d; and the constant-voltage source
(voltage generating source for electron accumulation) 25e.
[0206] The switching circuit 25a comprises switching contacts "a" to "c" and a fixed contact
"f". The switching circuit 25a connects one of the switching contacts "a" to "c" to
the fixed contact "f" in accordance with an instructing signal from the switching
pulse generating circuit 25b. The fixed contact "f" is connected to the upper electrode
14 of an electron-emitting element D.
[0207] The constant-voltage source 25c generates the third voltage Vp3 at both terminals
thereof. Both the terminals of the constant-voltage source 25c are connected to the
lower electrode 12 of the electron-emitting element D and the switching contact "c",
respectively. When the switching circuit 25a connects the switching contact "c" to
the fixed contact "f", the constant-voltage source 25c applies the third voltage Vp3
to the upper electrode 14 relative to the lower electrode 12.
[0208] The sinusoidal wave generating circuit 25d generates a voltage Vout which alters
with sinusoidal waves at both the terminals thereof. An amplitude V0 of the voltage
Vout is set to be the second voltage Vp2. A period T0 of the voltage Vout is set to
be a period shorter than a value (T/N) obtained by dividing one period T for one electron
accumulation and emission by the number N of electron emission caused during the one
period T (i.e., N being the number of voltage pulses during the one period T). Both
terminals of the sinusoidal wave generating circuit 25d are connected to the lower
electrode 12 and the switching contact "a", respectively. When the switching circuit
25a connects the switching contact "a" to the fixed contact "f", the voltage Vout
is applied to the upper electrode 14 relative to the lower electrode 12.
[0209] The constant-voltage source 25e generates the predetermined negative voltage Vm2
at both terminals thereof. Both the terminals of the constant-voltage source 25e are
connected to the lower electrode 12 of the electron-emitting element D and the switching
contact "b", respectively. When the switching circuit 25a connects the switching contact
"b" to the fixed contact "f', the predetermined negative voltage Vm2 is applied to
the upper electrode 14 relative to the lower electrode 12. Note that the constant-voltage
source 25e may be replaced with a voltage source which changes the voltage Vm2 in
accordance with the amount of electrons to be emitted (amount of electrons to be accumulated).
[0210] Next, a description is given of the operation of the electron-emitting apparatus
using the drive voltage applying circuit 25 with reference to Fig. 22. First, the
switching pulse generating circuit 25b connects the fixed contact "f" to the switching
contact "b" at the time t1. Thus, the negative voltage Vm2 is applied between the
upper and lower electrodes, and the element voltage Vka therefore changes toward the
predetermined negative voltage Vm2. Consequently, the negative-side polarization reversal
is caused in the emitter section 13, and thus, the electrons are accumulated in the
region near the micro through holes 14a of the emitter section 13.
[0211] At the time t2 when an electron accumulation period Tb has elapsed from the time
t1, the switching pulse generating circuit 25b connects the fixed contact "f" to the
switching contact "a". Thus, the sinusoidal wave voltage Vout generated by the sinusoidal
wave generating circuit 25d is applied between the upper and lower electrodes. That
is, the drive voltage Vin becomes the sinusoidal wave voltage Vout. The time t2 is
set at the timing from which the sinusoidal wave voltage Vout starts to increase from
the predetermined negative voltage Vm2. Thereafter, at the time t3 at which the drive
voltage Vin becomes the first lower voltage Vp1.1, the switching pulse generating
circuit 25b connects the fixed contact "f" with the switching contact "c".
[0212] Consequently, the element voltage Vka gradually increases during a first electron-emission
operation period Ta1 from the time t2 to the time t3, and reaches the first lower
voltage Vp1.1 at the time t3. Therefore, immediately before the time t3, the positive-side
polarization reversal is caused and the electrons are emitted.
[0213] The switching pulse generating circuit 25b continuously connects the fixed contact
"f" with the switching contact "c" during a third-voltage-setting period Tc1 from
the time t3 to the time t4. The time t4 is set at the timing at which a time duration
which is roughly equal to the double the period T0 of the sinusoidal wave voltage
Vout has elapsed from the time t2, and is further set at the timing from which the
sinusoidal wave voltage Vout starts to increase from the third voltage Vp3. During
the (first) third-voltage-setting period Tc1, the electrons are held in the emitter
section 13.
[0214] At the time t4, the switching pulse generating circuit 25b again connects the fixed
contact "f" to the switching contact "a". Thus, the sinusoidal wave voltage Vout generated
by the sinusoidal wave generating circuit 25d is applied between the upper and lower
electrodes. That is, the drive voltage Vin becomes the sinusoidal wave voltage Vout.
Thereafter, at the time t5 at which the drive voltage Vin becomes the first higher
voltage Vp1.2, the switching pulse generating circuit 25b connects the fixed contact
"f" to the switching contact "c".
[0215] Consequently, the element voltage Vka gradually increases during a second electron-emission
operation period Ta2 from the time t4 to the time t5, and reaches the first higher
voltage Vp1.2 at the time t5. Therefore, dipoles which have not completed the positive-side
polarization reversal starts the positive-side polarization reversal. As a result,
the electrons remaining in the region near the micro through holes 14a of the emitter
section 13 are emitted via the micro through holes 14a. That is, the electrons are
emitted again during the period from the time immediately before the time t5 to the
time t5.
[0216] The switching pulse generating circuit 25b connects the fixed contact "f" to the
switching contact "c" during a third-voltage-setting period Tc2 from the time t5 to
the time t6. The time t6 is set at the timing at which a time duration which is equal
to the double the period T0 of the sinusoidal wave voltage Vout has elapsed from the
time t4, and thus, is set at the timing from which the sinusoidal wave voltage Vout
starts to increase from the third voltage Vp3. During the (second) third-voltage-setting
period Tc2, the electrons are held in the emitter section 13.
[0217] The switching pulse generating circuit 25b connects the fixed contact "f" to the
switching contact "a" at the time t6. Thus, the sinusoidal wave voltage Vout is applied
between the upper and lower electrodes. Thereafter, the switching pulse generating
circuit 25b connects the fixed contact "f" to the switching contact "b" at the time
t7. The time t7 is set at the time at which the sinusoidal wave voltage Vout reaches
the predetermined negative voltage Vm2 after the peak on the positive side that appears
after the time t6.
[0218] As a result, the element voltage Vka reaches the second voltage Vp2 during a third
electron-emission operation period Ta3 from the time t6 to the time t7. Therefore,
dipoles which have not completed the positive-side polarization reversal by the time
t6, performs the positive-side polarization reversal, and thus, all the electrons
remaining in the emitter section 13 are emitted.
[0219] After the time t7, the electron accumulation period Tb restarts. In other words,
the period from the time t1 to the time t7 corresponds to one period T for electron
accumulation and emission.
[0220] As described above, according to the sixth embodiment, in order to accumulate the
electrons in the emitter section 13, the upper electrode 14 and the lower electrode
12 are connected to both the terminals of the voltage generating source for electron
accumulation 25e. The upper electrode 14 and the lower electrode 12 are thereafter
connected to both the terminals of the sinusoidal wave generating circuit 25d at the
appropriate timings so that the voltage having a plurality of pulse waveforms (voltage
pulses for electron emission) can be applied to the element.
[0221] The drive voltage applying circuit 25 increases each of a plurality of the pulse
waveforms (drive voltage Vin during the periods of the times t2 to t3, t4 to t5, and
t6 to t7, i.e., voltage pulse) along with the sinusoidal wave. Therefore, with the
simple configuration, it is possible to give an inclination to the each of pulse waveforms.
[0222] In addition, according to the sixth embodiment, relationships of Ta1<Tc1 and Ta2<Tc2
(i.e., Tps<Trs) are also established. Therefore, it is possible to reduce the amount
of electrons moving on the surface of the emitter section 13 and leaked to the upper
electrode 14 among the electrons accumulated in the emitter section 13.
[0223] Furthermore, relationships of Ta3>Ta2 and Ta3>Ta1 are established. In other words,
the pulse width of the final voltage-pulse is larger than the pulse width of another
voltage-pulse. In addition, the maximum value of the final voltage-pulse (Vp2) is
significantly larger than the maximum values of the other voltage-pulses (Vp1.1 and
Vp1.2). As a consequence, the polarization of the emitter section 13 becomes stable
by the final voltage-pulse generated just before the restart timing of electron accumulation
operation (time t7 shown in Fig. 22).
[0224] As described, the third voltage Vp3 may be 0V and, alternatively, the third voltage
Vp3 may be the negative voltage. In order to set the third voltage Vp3 to be 0V, the
constant-voltage source 25c is replaced with a voltage source for generating 0V. Specifically,
the contact "c" is connected to the lower electrode 12 via a lead or a resistor having
a predetermined resistance. In other words, such a lead or such a resistor can constitute
the constant-voltage source 25c. As above, if the third voltage Vp3 is set to be 0V,
a power supply circuit for generating a predetermined voltage other than 0V (power
supply circuit for generating the third voltage) is not necessary and the drive voltage
applying circuit 25 is therefore simplified.
[0225] Further, as shown in Fig. 23, the switching contact "c" may be a contact which is
not connected to any portion, i.e., may be opened. With this configuration, since
it is not necessary to provide the constant-voltage source 25c additionally, the drive
voltage applying circuit 31 can be manufactured with low costs.
(Seventh embodiment)
[0226] Next, a description is given of an electron-emitting apparatus 30 according to the
seventh embodiment of the present invention with reference to Fig. 24. The electron-emitting
apparatus 30 is different from the electron-emitting apparatus 10 in that the electron-emitting
apparatus 10 includes a collector electrode 18' and a phosphor 19' in place of the
collector electrode 18 and the phosphor 19 in the electron emitting apparatus 10,
respectively. Thus, the description below is mainly directed to this difference.
[0227] In the electron-emitting apparatus 30, the phosphor 19' is disposed on the back surface
of the transparent plate 17 (i.e., on the surface facing the upper electrode 14),
and the collector electrode 18' is disposed to cover the phosphor 19'. The collector
electrode 18' has a thickness that allows electrons emitted from the emitter section
13 via the micro through holes 14a in the upper electrode 14 to travel through (penetrate)
the collector electrode 18'. The thickness of the collector electrode 18' is preferably
100 nm or less. The thickness of the collector electrode 18' can be larger as the
kinetic energy of the emitted electrons is higher.
[0228] The configuration of this embodiment is typically employed in cathode ray tubes (CRTs).
The collector electrode 18' functions as a metal back. The electrons emitted from
the emitter section 13 through the micro through holes 14a in the upper electrode
14 travel through the collector electrode 18', enter the phosphor 19', and excite
the phosphor 19', thereby causing light emission. The advantages of the electron-emitting
apparatus 30 are as follows:
(a) When the phosphor 19' is not electrically conductive, electrification (negative
charging) of the phosphor 19' can be avoided. Thus, the electric field that accelerates
electrons can be maintained.
(b) Since the collector electrode 18' reflects light generated by the phosphor 19',
the light can be emitted toward the transparent plate 17-side (emission surface side)
with higher efficiency.
(c) Since collision of excessive electrons against the phosphor 19' can be avoided,
deterioration of the phosphor 19' and the generation of gas from the phosphor 19'
can be avoided.
(Materials of Constituent Components and Production Examples)
[0229] The materials of the constituent components of the electron-emitting apparatuses
described above and the method for producing the constituent components will now be
described.
(Lower electrode 12)
[0230] The lower electrode is made of an electrically conductive material described above.
Examples of the preferable materials for the lower electrode will be described in
detail below:
- (1) Conductors resistant to high-temperature oxidizing atmosphere (e.g., elemental
metals or alloys)
Examples: high-melting-point noble metals such as platinum, iridium, palladium, rhodium,
and molybdenum
Examples: materials mainly made of a silver-palladium alloy, a silver-platinum alloy,
or a platinum-palladium alloy
- (2) Mixtures of ceramics having electrical isolation and being resistant to high-temperature
oxidizing atmosphere and elemental metals
Example: a cermet material of platinum and a ceramic
- (3) Mixtures of ceramics having electrical isolation and being resistant to high-temperature
oxidizing atmosphere and alloys
- (4) Carbon-based or graphite-based materials
[0231] Among these materials above, elemental platinum and materials mainly composed of
platinum alloys are particularly preferable. It should be noted that when a ceramic
material is added to the electrode material, it is preferable to use roughly 5 to
30 percent by volume of the ceramic material. Materials similar to those of the upper
electrode 14 described below may also be used for the lower electrode. The lower electrode
is preferably formed by a thick-film forming process. The thickness of the lower electrode
is preferably 20 µm or less and most preferably 5 µm or less.
(Emitter Section 13)
[0232] The dielectric material that constitutes the emitter section may be a dielectric
material having a relatively high relative dielectric constant (for example, a relative
dielectric constant of 1,000 or higher). Examples of the preferable material for the
emitter section are as follows:
- (1) Barium titanate, lead zirconate, lead magnesium niobate, lead nickelniobate, lead
zinc niobate, lead manganese niobate, lead magnesium tantalate, lead nickel tantalate,
lead antimony stannate, lead titanate, lead magnesium tungstate, and lead cobalt niobate
- (2) Ceramics containing any combination of the substances listed in (1) above
- (3) Ceramics described in (2) further containing an oxide of lanthanum, calcium, strontium,
molybdenum, tungsten, barium, niobium, zinc, nickel, or manganese; ceramics described
in (2) further containing any combination of the oxides described above; and the ceramics
described above further containing other compounds
- (4) Materials mainly containing 50% or more of the materials listed in (1) above
[0233] It is noted that, for example, a two-component system containing lead magnesium niobate
(PMN) and lead titanate (PT), i.e., nPMN-mPT (n and m represent molar ratios), can
exhibit a decreased Curie point and a large relative dielectric constant at room temperature
by increasing the molar ratio of the PMN. In particular, nPMN-mPT having n of 0.85
to 1.0 and m of 1.0-n exhibits a relative dielectric constant of 3,000 or higher and
is thus particularly preferable as the material for the emitter section. For example,
the nPMN-mPT having n of 0.91 and m of 0.09 exhibits a relative dielectric constant
of 15,000 at room temperature. The nPMN-mPT having n of 0.95 and m of 0.05 exhibits
a relative dielectric constant of 20,000 at room temperature.
[0234] Furthermore, a three-component system containing lead magnesium niobate (PMN), lead
titanate (PT), and lead zirconate (PZ), i.e., PMN-PT-PZ, can exhibit a higher relative
dielectric constant by increasing the molar ratio of PMN. In this three-component
system, the relative dielectric constant can be increased by adjusting the composition
to near the morphotropic phase boundary (MPB) between the tetragonal and pseudo cubic
phases or between the tetragonal and rhombohedral phases.
[0235] For example, PMN:PT:PZ of 0.375:0.375:0.25 yields a relative dielectric constant
of 5,500, and PMN:PT:PZ of 0.5:0.375:0.125 yields a relative dielectric constant of
4,500. These compositions are particularly preferable as the material for the emitter
section.
[0236] Furthermore, a metal, such as platinum, may be preferably added to the dielectric
material as long as the insulating ability can be ensured in order to increase the
dielectric constant. For example, 20 percent by weight of platinum may preferably
be added to the dielectric material.
[0237] A piezoelectric/electrostrictive layer, a ferroelectric layer or an antiferroelectric
layer may be used as the emitter section. When the emitter section is a piezoelectric/electrostrictive
layer, the piezoelectric/electrostrictive layer may be composed of a ceramic containing
lead zirconate, lead magnesium niobate, lead nickel niobate, lead zinc niobate, lead
manganese niobate, lead magnesium tantalate, lead nickel tantalate, lead antimony
stannate, lead titanate, barium titanate, lead magnesium tungstate, lead cobalt niobate,
or any combination of these.
[0238] Obviously, the emitter section may be made of a material containing 50 percent by
weight or more of the above-described compound as the main component. Among the ceramics
described above, a ceramic containing lead zirconate is most frequently used as the
constituent material for the piezoelectric/electrostrictive layer that serves as the
emitter section.
[0239] When the piezoelectric/electrostrictive layer is formed using a ceramic, the ceramic
may further contain an oxide of lanthanum, calcium, strontium, molybdenum, tungsten,
barium, niobium, zinc, nickel, or manganese, or any combination of these oxides, or
other compounds. The ceramic described above may further contain SiO
2, CeO
2, Pb
5Ge3O
11, or any combination of these. In particular, a PT-PZ-PMN-based piezoelectric material
containing 0.2 percent by weight of SiO
2, 0.1 percent by weight of CeO
2, or 1 to 2 percent by weight of Pb
5Ge
3O
11 is preferable.
[0240] In detail, for example, a ceramic mainly composed of lead magnesium niobate, lead
zirconate, and lead titanate, and containing lanthanum or strontium in addition to
these is particularly preferable.
[0241] The piezoelectric/electrostrictive layer may be dense or porous. When the piezoelectric/electrostrictive
layer is porous, the void ratio is preferably 40% or less.
[0242] When an antiferroelectric layer is used as the emitter section 13, the antiferroelectric
layer preferably contains lead zirconate as a main component, lead zirconate and lead
stannate as main components, lead zirconate containing lanthanum oxide as an additive,
or a lead zirconate and lead stannate containing lead niobate as an additive.
[0243] The antiferroelectric layer may be porous. When the antiferroelectric layer is porous,
the void ratio thereof is preferably 30% or less.
[0244] In particular, strontium tantalate bismuthate (SrBi
2Ta
2O
9) is suitable for the emitter section, since it exhibits low fatigue by repeated polarization
reversal. The material exhibiting low fatigue due to polarization reversal is a laminar
ferroelectric compound represented by general formula (BiO
2)
2+(A
m-1B
mO
3m+1)
2-. In the formula, the ions of the metal A are Ca
2+, Sr
2+, Ba
2+, Pb
2+, Bi
3+, La
3+, or the like, and the ions of the metal B are Ti
4+, Ta
5+, Nb
5+, or the like. Alternatively, a piezoelectric ceramic based on barium titanate, lead
zirconate, or PZT may be combined with an additive to impart semiconductive properties
to the ceramic. In such a case, since the emitter section 13 provide an uneven electric
field distribution, it becomes possible to concentrate the electric field near the
boundary with the upper electrode that contributes to emit electrons.
[0245] The baking (firing) temperature of the emitter section 13 can be decreased by adding
a glass component, such as lead borosilicate glass, or a low-melting-point compound
(such as bismuth oxide) other than the glass component to the piezoelectric/electrostrictive/ferroelectric/antiferroelectric
ceramic.
[0246] In forming the emitter section with the piezoelectric/electrostrictive/ferroelectric/antiferroelectric
ceramic, the emitter section may be formed from a molded sheet, a laminated sheet,
or a composite of the molded sheet or the laminated sheet stacked or bonded on a supporting
substrate.
[0247] An emitter section that is hardly damaged by collision of electrons or ions can be
produced by using a material having a high melting point or a high evaporation temperature,
e.g., a non-lead material, for the emitter section.
[0248] The emitter section may be formed by various thick-film forming processes, such as
a screen printing process, a dipping process, an application process, an electrophoresis
process, and an aerosol deposition process, or by various thin-film forming processes,
such as an ion-beam process, a sputtering process, a vacuum deposition process, an
ion-plating process, a chemical vapor deposition (CVD) process, and a plating process.
In particular, a powdered piezoelectric/electrostrictive material may be molded to
form the emitter section, and the molded emitter section may be impregnated with a
low-melting-point glass or sol particles to form a film at a temperature as low as
700°C or 600°C or less.
(Upper Electrode 14)
[0249] An organometal paste is used to form the upper electrode, since it can produce a
thin film by firing (baking). An example of the organometal paste is a platinum resinate
paste. The upper electrode is preferably made of an oxide electrode that can suppress
the fatigue due to polarization reversal or a platinum resinate paste containing an
oxide for suppress the fatigue due to polarization reversal. Examples of the oxide
electrode that suppress the fatigue due to polarization reversal include ruthenium
oxide (RuO
2), iridium oxide (IrO
2), strontium ruthenate (SrRuO
3), La
1-xSr
xCoO
3 (e.g., x = 0.3 or 0.5), La
1-xCa
xMnO
3 (e.g., x = 0.2), and La
1-xCa
xMn
1-yCO
yO
3 (e.g., x = 0.2, y =0.05).
[0250] Furthermore, preferably, the average diameter of the through-holes 14a of the upper
electrode 14 is smaller than the grain size of the dielectric material of the emitter
section 13. In addition, preferably, the upper electrode 14 contains a metal, and
the through-holes 14a are pores formed by crystal grains of the metal. The process
of forming the upper electrode 14 and the materials of the upper electrode 14 will
be described in detail below.
[0251] The upper electrode 14 can be formed by extending an "organometallic compound containing
at least two types of metals" of silver (Ag), gold (Au), iridium (Ir), rhodium (Rh),
ruthenium (Ru), platinum (Pt), platinum (Pd), aluminum (Al), cupper (Cu), nickel (Ni),
chromium (Cr), molybdenum (Mo), tungsten (W), and titanium (Ti) on the upper portion
of the material forming the emitter section 13 in the shape of a film and baking the
compound at a predetermined temperature.
[0252] Here, the "organometallic compound containing at least two types of metals" may be
any of a compound formed by mixing two or more types of organometallic compounds each
of which containing only one type of metal, one type of organometallic compound containing
two or more types of metals, and a compound formed by mixing one type of organometallic
compound containing two or more types of meals with another organometallic compound.
Further, preferably, the "organometallic compound containing at least two types of
metals" may contain at least a noble metal. Furthermore, preferably, the noble metal
may include platinum (Pt), gold (Au), or iridium (Ir).
(Example 1)
[0253] For example, one organometallic compound containing only one type of metal, i.e.,
Pt and another organometallic compound containing only one type of metal, i.e., Ir
having the melting point higher than that of Pt are mixed with 97 percent by weight
of Pt and 3 percent by weight of Ir (Pt:Ir = 97:3). Then, the mixed organometallic
compound paste is printed on the upper surface of the material forming the emitter
section 13 by screen printing so as to be extended in the shape of a film, and is
thereafter dried at a 100°C temperature. Then, the formed compound is heated and temperature-increased
to 700°C with the temperature rise rate 47°C/min (47°C per minute). The organometallic
compound is kept in this state for 30 minutes to be baked (fired). By this process,
the upper electrode 14 is manufactured. Alternatively, the mixture and agitation of
97 percent by weight of Pt and 3 percent by weight of Ir may be printed on the material
forming the emitter section 13, then may be dried at 100°C, and may be temperature-increased
to 700°C with the temperature rise rate of 1400°C/min, may be kept in this state for
30 minutes to be manufactured (baked).
(Example 2)
[0254] One organometallic compound containing only one type of metal, i.e., Pt and another
organometallic compound containing only one type of metal, i.e., Au having the melting
point lower than that of Pt are mixed with 95 percent by weight of Pt and 5 percent
by weight of Au (Pt:Au=95:5). Then, the mixed organometallic compound paste is printed
on the upper surface of the material forming the emitter section 13 by screen printing
to be extended in the shape of a film, and is thereafter dried at 100°C. Further,
the formed compound is heated and temperature-increased to 650°C with the temperature
rise rate of 43°C/min (43°C per minute) and is kept in this state for 30 minutes to
be baked (fired). By this process, the upper electrode 14 can be preferably manufactured.
(Example 3)
[0255] The upper electrode 14 can be manufactured, containing three types of organometallic
compounds. For example, one organometallic compound containing only one type of metal,
i.e., Pt, serving as the base material, another organometallic compound containing
only one type of metal, i.e., Au having the melting point lower than that of Pt, and
another organometallic compound containing one type of metal, i.e., Ir having the
melting point higher than that of Pt are mixed with 93 percent by weight of Pt, 4.5
percent by weight of Au, and 2.5 percent by weight of Ir. Then, the mixed organometallic
compound paste is printed on the upper surface of the material forming the emitter
section 13 by screen printing to be extended in the shape of a film, and is thereafter
dried at 100°C. Further, the formed compound is heated and temperature-increased to
700°C with the temperature rise rate of 47°C/min (47°C per minute). The organometallic
compound is kept in this state for 30 minutes to be baked (fired). By this process,
the upper electrode can be preferably manufactured.
(Example 4)
[0256] The mixed organometallic compound containing Pt, Au, and Ir as described in the Example
2 is printed on the upper surface of the material forming the emitter section 13 by
screen printing to be extended in the shape of a film. Thereafter, the compound is
dried at a 100°C temperature. Further, the formed compound is heated and temperature-increased
to 700°C with the temperature rise rate of 23°C/sec (23°C per second, i.e., 1400°C
per minute). The mixed organometallic compound is kept in this state for 30 minutes
to be baked (fired). By this process, the upper electrode 14 can be manufactured.
(Example 5)
[0257] The upper electrode containing only one type of metal can be manufactured as follows.
For example, an organometallic compound paste containing only one type of metal, i.e.,
the above-mentioned metal (here, Pt) is printed on the upper surface of the material
forming the emitter section 13 by screen printing to be extended in the shape of film.
Thereafter, the compound is dried at 100°C. Further, the formed compound is heated
and temperature-increased to 600°C with the temperature rise rate of 20°C/sec (20°C
per second, i.e., 1200°C per minute). The organometallic compound is kept in this
state for 30 minutes to be baked (fired).
[0258] The above-manufactured upper electrode 14 has the micro through holes 14a whose average
diameter is 10 nm or more and less than 100 nm, and thus can emit a large amount of
electrons. As mentioned above, the average diameter of the micro through holes 14a
may be 0.01 µm or more and 10 µm or less.
[0259] Further, the upper electrode may contain an aggregate of scale materials (e.g., black
lead) or an aggregate of conductive materials including scale materials. The above-described
material aggregate originally has a portion of separated scales. Therefore, such portion
can be used as the micro through hole of the upper electrode without the baking (firing).
Furthermore, organic resin and a metallic thin film are laminated on the emitter section
in this order and the organic resin is thereafter baked to form the micro through
holes in the metallic thin film, thereby forming the upper electrode.
[0260] The upper electrode may contain the above materials and may be formed by various
thick-film forming processes, such as a screen printing process, a spraying process,
a coating process, a dipping process, an application process, and an electrophoresis
process, or by various typical thin-film forming processes, such as a sputtering process,
an ion-beam process, a vacuum deposition process, anion-plating process, a chemical
vapor deposition (CVD) process, and a plating process.
[0261] As described above, the electron-emitting apparatus according to the present invention
stepwise increases the drive voltage, thereby emitting the electrons a plurality of
times, which are accumulated in the emitter section 13 by once electron-accumulation
operation. Therefore, the inrush current does not flow through the electron-emitting
element. Thus, the deterioration of the element due to the heat is prevented and the
amount of emitted electrons can be increased.
[0262] Further, in the electron-emitting apparatuses, the collector electrode 18 is earthed
while unnecessary electron-emission may be emitted, and the collector voltage Vc is
applied to the collector electrode 18 while the electron emission is required. Thus,
each of the electron-emitting apparatus can impart sufficient energy to electrons
properly emitted while avoiding unnecessary electron emission, and therefore, provide
a display that can present satisfactory images. Moreover, even when the space between
the upper electrode 14 and the collector electrode 18 enters a plasma state, the plasma
can be eliminated since the collector electrode 18 is intermittently turned off. As
a result, continuous generation of intense emission due to a continuing plasma state
can be avoided.
[0263] In addition, the apparatus includes the focusing electrode. Thus, the distance between
the upper electrode and the collector electrode can be increased since the emitted
electrons substantially travel in the right upward direction of the upper electrode.
As a result, dielectric breakdown between the upper electrode and the collector electrode
can be suppressed or avoided. Because the possibility of dielectric breakdown between
the upper electrode and the collector electrode reduces, the first collector voltage
V1 (Vc) applied to the collector electrode 18 during the period in which the collector
electrode 18 is turned on can be set larger. Thus, large energy can be imparted to
the electrons reaching the phosphors, and the luminance of the display can be thereby
increased.
[0264] Note that the present invention is not limited to the embodiments described above
and various other modifications and alternations can be adopted without departing
from the scope of the invention. For example, each of the electron-emitting apparatus
according to above described embodiments comprises a plurality of electron-emitting
elements, however, the electron-emitting apparatus may comprise only one electron-emitting
element. Further, for example, as shown in Fig. 25, the focusing electrodes 16 may
be formed not only between the upper electrodes 14 adjacent to each other in the X-axis
direction but also between the upper electrodes 14 adjacent to each other in the Y-axis
direction in a plan view.
[0265] In addition, the phosphor may be in contact with the upper electrode 14 on the surface
of the upper electrode 14 opposed to the emitter section 13. With this configuration,
electrons emitted via the micro through holes 14a of the upper electrodes 14 collide
with the phosphor disposed just on the top of the upper electrode 14, and the phosphor
is excited to generates the light. Note that the above-mentioned phosphor as well
as both the phosphors 19 and 19' described in the embodiments are the "phosphors for
emitting light by the collision of electrons, disposed to be opposed to the upper
electrode 14 on the upper part of the upper electrode 14".
[0266] Furthermore, as shown in Fig. 26, one pixel PX of the electron-emitting apparatus
may include four elements (a first upper electrode 14-1, a second upper electrode
14-2, a third upper electrode 14-3, and a fourth upper electrode 14-4), and focusing
electrodes 16. In such a case, for example, a green phosphor (not shown) is disposed
directly above the first upper electrode 14-1, a red phosphor (not shown) is disposed
directly above each of the second upper electrode 14-2 and the fourth upper electrode
14-4, and a blue phosphor (not shown) is disposed directly above the third upper electrode
14-3. The focusing electrodes 16 are formed to surround each of the upper electrodes
14. With this arrangement, electrons emitted from the upper electrode 14 of a particular
element reach only the phosphor disposed directly above the particular upper electrode
14. Thus, satisfactory color purity can be maintained, and blurring of the image patterns
can be avoided.
[0267] As shown in Figs. 27 and 28, an electron-emitting apparatus 60 according to the present
invention may include a plurality of completely independent elements aligned on the
substrate 11, each element including a lower electrode 62, an emitter section 63,
and an upper electrode 64. In this apparatus, the gaps between the elements may be
filled with insulators 65, and the focusing electrodes 66 may be disposed on the upper
surfaces of the insulators 65 between the upper electrodes 64 adjacent to each other
in the X-axis direction. With the electron-emitting apparatus 60 having such a structure,
electrons can be emitted from each of the elements either simultaneously or at independent
timings.
[0268] The substrate 11 may be made of a material primarily containing aluminum oxide or
a material primarily made of a mixture of aluminum oxide and zirconium oxide.
[0269] In addition, in the fourth and the fifth embodiments, the drive voltage has a rectangular
waveform (i.e., the voltage pulse is a rectangular wave), the drive voltage may alter
with an inclination when increasing and decreasing. In other words, the waveform of
the voltage pulse for emitting electrons may be in a shape of a trapezoid or a triangle,
and so on.
[0270] Furthermore, the level of a voltage applied between the upper electrode and the lower
electrode during an interval between successive voltage pulses for electron emissions
(i.e., the level of the drive voltage at which the element voltage is set at a voltage
level that causes no electron accumulation into the emitter section during a period
between two successive pulses for electron emissions) may be a value which differs
for each voltage pulse interval; or paraphrasing it more specifically, the levels
of the third voltage Vp3 during the electron holding periods Tp3 may be values varying
from one electron holding period Tp3 to another.