(19)
(11) EP 1 708 259 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
07.01.2015 Bulletin 2015/02

(45) Mention of the grant of the patent:
22.10.2014 Bulletin 2014/43

(21) Application number: 06251792.5

(22) Date of filing: 30.03.2006
(51) International Patent Classification (IPC): 
H01L 29/778(2006.01)
H01L 29/20(2006.01)
 H01L 29/812(2006.01)

(54)

Semiconductor device having GaN-based semiconductor layer

Halbleiteranordnung mit GaN-basierter Halbleiterschicht

Dispositif semi-conducteur avec couche semi-conductrice à base de GaN

(84) Designated Contracting States:
DE FR GB

(30) Priority: 30.03.2005 JP 2005096902

(43) Date of publication of application:
04.10.2006 Bulletin 2006/40

(73) Proprietor: Sumitomo Electric Device Innovations, Inc.
Yokohama-shi Kanagawa 244-0845 (JP)

(72) Inventors:
  • Kurachi, Shunsuke, Eudyna Devices Inc.
    Nakakoga-gun Yamanashi 409-3883 (JP)
  • Komatani, Tsutomu, Eudyna Devices Inc.
    Nakakoga-gun Yamanashi 409-3883 (JP)

(74) Representative: Fenlon, Christine Lesley et al
Haseltine Lake LLP Lincoln House, 5th Floor 300 High Holborn
London WC1V 7JH
London WC1V 7JH (GB)


(56) References cited: : 
WO-A-2005/024955
US-A1- 2004 201 038
 US-A1- 2001 028 100
   
  • TAN W S ET AL: "Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors" JOURNAL OF PHYSICS D. APPLIED PHYSICS, IOP PUBLISHING, BRISTOL, GB, vol. 35, no. 7, 19 March 2002 (2002-03-19), pages 595-598, XP009098462 ISSN: 0022-3727
  • ARULKUMARAN S ET AL: "Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride" APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 84, no. 4, 26 January 2004 (2004-01-26), pages 613-615, XP012061941 ISSN: 0003-6951
  • HWANG J ET AL: "Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors" SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 48, no. 2, February 2004 (2004-02), pages 363-366, XP004470558 ISSN: 0038-1101
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).