A semiconductor memory device with information loss self-detect capability

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EP 1 717 817 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	18.05.2016 Bulletin 2016/20

(45)	Mention of the grant of the patent:
	13.04.2016 Bulletin 2016/15

(21)	Application number: 05103557.4

(22)	Date of filing: 29.04.2005

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International Patent Classification (IPC):

G11C 13/00^(2006.01)

G11C 16/34^(2006.01)

(54)	A semiconductor memory device with information loss self-detect capability Halbleiterspeicheranordnung mit Fähigkeit zur Informationsverlusterkennung Dispositif de mémoire à semi-conducteurs avec la capacité de détection de perte d'information

(84)	Designated Contracting States:
	DE FR GB IT

(43)	Date of publication of application:
	02.11.2006 Bulletin 2006/44

(73)	Proprietor: Micron Technology, Inc.
	Boise, Idaho 83707 (US)

(72)	Inventors:
	Resta, Claudio I-23030 Villa di Tirano (SO) (IT) Bedeschi, Ferdinando I-20052 Monza (MI) (IT)

(74)	Representative: Manley, Nicholas Michael et al
	WP Thompson 8th Floor 1 Mann Island Liverpool L3 1BP Liverpool L3 1BP (GB)

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References cited: :

EP-A- 1 426 971
US-A- 5 671 180
US-A1- 2003 218 925
US-B1- 6 249 841

US-A- 5 359 205
US-A- 5 999 448
US-A1- 2004 165 456

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).