(19)
(11) EP 1 721 865 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
28.09.2011 Bulletin 2011/39

(43) Date of publication A2:
15.11.2006 Bulletin 2006/46

(21) Application number: 06075963.6

(22) Date of filing: 28.04.2006
(51) International Patent Classification (IPC): 
B81C 1/00(2006.01)
 G01P 15/12(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK YU

(30) Priority: 12.05.2005 US 127457

(71) Applicant: Delphi Technologies, Inc.
Troy, Michigan 48007 (US)

(72) Inventors:
  • Rich, David B.
    Kokomo, IN 46901 (US)
  • Crist, Steven M.
    Charlotte, NC 28269 (US)

(74) Representative: Denton, Michael John et al
Delphi France SAS 64 Avenue de la Plaine de France ZAC Paris Nord II B.P. 65059, Tremblay en France
95972 Roissy Charles de Gaulle Cedex
95972 Roissy Charles de Gaulle Cedex (FR)

   


(54) Piezoresistive sensing structure


(57) A technique for manufacturing a piezoresistive sensing structure (170) includes a number of process steps. Initially, a piezoresistive element (108) is implanted into a first side of an assembly (102,106,104A) that includes a semiconductor material (102,104A). A passivation layer (110A) is then formed on the first side of the assembly (102,106,104A) over the element (108). The passivation layer (110A) is then removed from selected areas on the first side of the assembly (102,106,104A). A first mask is then provided on the passivation layer (110A) in a desired pattern. A beam (152), which includes the element (108), is then formed in the assembly over at least a portion of the assembly (102,106,104A) that is to provide a cavity (103). The passivation layer (110A) provides a second mask, in the formation of the beam (152), that determines a width of the formed beam (152).







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