FIELD-EFFECT DEVICE HAVING A METAL-INSULATOR-SEMICONDUCTOR HIGH-VOLTAGE STRUCTURE AND METHOD OF MAKING THE SAME - Patent 1735839

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EP 1 735 839 A2

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(88)	Date of publication A3:
	30.03.2006

(43)	Date of publication:
	27.12.2006 Bulletin 2006/52

(21)	Application number: 05709000.3

(22)	Date of filing: 11.03.2005

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International Patent Classification (IPC):

H01L 29/78^(2006.01)
H01L 29/06^(2006.01)
H01L 29/41^(2006.01)
H01L 29/51^(2006.01)

H01L 29/786^(2006.01)
H01L 29/36^(2006.01)
H01L 29/417^(2006.01)

(86)	International application number:
	PCT/IB2005/050887

(87)	International publication number:
	WO 2005/091371 (29.09.2005 Gazette 2005/39)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR

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Priority:

15.03.2004 US 553310 P

(71)	Applicant: Koninklijke Philips Electronics N.V.
	5621 BA Eindhoven (NL)

(72)	Inventors:
	LETAVIC, Theodore Briarcliff Manor, New York 10510-8001 (US) PETRUZELLO, John Briarcliff Manor, New York 10510-8001 (US) SIMPSON, Mark Briarcliff Manor, New York 10510-8001 (US)

(74)	Representative: Eleveld, Koop Jan
	Philips Intellectual Property & Standards, P.O. Box 220 5600 AE Eindhoven 5600 AE Eindhoven (NL)

(54)	FIELD-EFFECT DEVICE HAVING A METAL-INSULATOR-SEMICONDUCTOR HIGH-VOLTAGE STRUCTURE AND METHOD OF MAKING THE SAME