(19) |
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(11) |
EP 1 739 712 A8 |
(12) |
CORRECTED EUROPEAN PATENT APPLICATION |
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Note: Bibliography reflects the latest situation |
(15) |
Correction information: |
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Corrected version no 1 (W1 A2) |
(48) |
Corrigendum issued on: |
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21.02.2007 Bulletin 2007/08 |
(88) |
Date of publication A3: |
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10.01.2007 Bulletin 2007/02 |
(43) |
Date of publication: |
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03.01.2007 Bulletin 2007/01 |
(22) |
Date of filing: 29.05.2006 |
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(51) |
International Patent Classification (IPC):
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(84) |
Designated Contracting States: |
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AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE
SI SK TR |
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Designated Extension States: |
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AL BA HR MK YU |
(30) |
Priority: |
31.05.2005 KR 20050046200
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(71) |
Applicant: Samsung SDI Co., Ltd. |
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Suwon-si
Gyeonggi-do (KR) |
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(72) |
Inventors: |
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- Jeon, Sang-Ho
Legal & Team, Samsung SDI Co., LTD.
Kyunggi-do (KR)
- Lee, Chun-Gyoo
Legal & IP Team Samsung SDI Co.,LTD
Kyunggi-do (KR)
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(74) |
Representative: Hengelhaupt, Jürgen |
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Gulde Hengelhaupt Ziebig & Schneider
Wallstrasse 58/59 10179 Berlin 10179 Berlin (DE) |
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(54) |
Electron emission device |
(57) An electron emission device includes electron emission regions formed on a first
substrate, a driving electrode for controlling emission of electrons emitted from
the electron emission regions, and a focusing electrode for focusing the electrons
and having an opening through which the electrons pass. A first insulating layer is
disposed between the driving electrode and the focusing electrode. The focusing electrode
and the insulating layer satisfy at least one of the following two conditions: 1.0
≤ |Vf/t| ≤ 6.0; and 0.2 ≤ |Vf/Wh| ≤ 0.4, where Vf (V) indicates the voltage applied
to the focusing electrode, t (µm) indicates the thickness of the insulating layer,
and Wh (µm) indicates the width of the opening of the focusing electrode.