| (19) |
 |
|
(11) |
EP 1 768 175 A8 |
| (12) |
CORRECTED EUROPEAN PATENT APPLICATION |
|
published in accordance with Art. 158(3) EPC |
| (15) |
Correction information: |
|
Corrected version no 1 (W1 A1) |
| (48) |
Corrigendum issued on: |
|
09.05.2007 Bulletin 2007/19 |
| (43) |
Date of publication: |
|
28.03.2007 Bulletin 2007/13 |
| (22) |
Date of filing: 30.05.2005 |
|
| (51) |
International Patent Classification (IPC):
|
| (86) |
International application number: |
|
PCT/JP2005/009891 |
| (87) |
International publication number: |
|
WO 2005/119758 (15.12.2005 Gazette 2005/50) |
|
| (84) |
Designated Contracting States: |
|
DE FR GB IT |
| (30) |
Priority: |
04.06.2004 JP 2004167435
|
| (71) |
Applicant: AZ Electronic Materials USA Corp. |
|
Somerville, NJ 08876 (US) |
|
| (72) |
Inventors: |
|
- NAGURA, Teruno
c/o AZ Electronic Materials (Japan) K.K.
Shizuoka 4371412 (JP)
- SHIMIZU, Yasuo
c/o AZ Electronic Materials (Japan) K.K.
Shizuoka 4371412 (JP)
- ICHIYAMA, Masaaki
c/o AZ Electronic Materials (Japan) K.K.
Shizuoka 4371412 (JP)
|
| (74) |
Representative: Isenbruck, Günter et al |
|
Isenbruck, Bösl, Hörschler, Wichmann, Huhn
Patentanwälte
Theodor-Heuss-Anlage 12
68165 Mannheim
68165 Mannheim (DE) |
|
| |
|
| (54) |
METHOD FOR FORMING TRENCH ISOLATION STRUCTURE |
(57) This invention provides a base material with a siliceous film, which is free from
voids and cracks in the interior of groove(s) in a trench isolation structure and
has excellent adhesion between a substrate and a siliceous film, and a process for
producing the base material with a siliceous film.
A trench isolation structure is formed by a method comprising coating a silicon-containing
polymer solution onto a substrate having trench isolation groove(s) of which the surface
has been continuously covered with a silicon nitride liner film, and heat treating
the coated substrate at a temperature of from 900°C to 1200°C. The base material with
a siliceous film is provided using the method.