(19)
(11) EP 1 779 416 A2

(12)

(88) Date of publication A3:
10.08.2006

(43) Date of publication:
02.05.2007 Bulletin 2007/18

(21) Application number: 05772270.4

(22) Date of filing: 14.07.2005
(51) International Patent Classification (IPC): 
H01L 21/336(2006.01)
(86) International application number:
PCT/US2005/025212
(87) International publication number:
WO 2006/020064 (23.02.2006 Gazette 2006/08)
(84) Designated Contracting States:
DE IT

(30) Priority: 15.07.2004 US 893519

(71) Applicant: Fairchild Semiconductor Corporation
South Portland, ME 04106 (US)

(72) Inventors:
  • CAI, Jun
    Scarborough, ME 04074 (US)
  • HARLEY-STEAD, Michael
    Portland, ME 04101 (US)
  • HOLT, Jim G.
    Los Altos, CA 94024 (US)

(74) Representative: Schmidt, Steffen J. 
Wuesthoff & Wuesthoff, Patent- und Rechtsanwälte, Schweigerstrasse 2
81541 München
81541 München (DE)

   


(54) ASYMMETRIC HETERO-DOPED HIGH-VOLTAGE MOSFET (AH2MOS)