(19)
(11)
EP 1 779 416 A2
(12)
(88)
Date of publication A3:
10.08.2006
(43)
Date of publication:
02.05.2007
Bulletin 2007/18
(21)
Application number:
05772270.4
(22)
Date of filing:
14.07.2005
(51)
International Patent Classification (IPC):
H01L
21/336
(2006.01)
(86)
International application number:
PCT/US2005/025212
(87)
International publication number:
WO 2006/020064
(
23.02.2006
Gazette 2006/08)
(84)
Designated Contracting States:
DE IT
(30)
Priority:
15.07.2004
US 893519
(71)
Applicant:
Fairchild Semiconductor Corporation
South Portland, ME 04106 (US)
(72)
Inventors:
CAI, Jun
Scarborough, ME 04074 (US)
HARLEY-STEAD, Michael
Portland, ME 04101 (US)
HOLT, Jim G.
Los Altos, CA 94024 (US)
(74)
Representative:
Schmidt, Steffen J.
Wuesthoff & Wuesthoff, Patent- und Rechtsanwälte, Schweigerstrasse 2
81541 München
81541 München (DE)
(54)
ASYMMETRIC HETERO-DOPED HIGH-VOLTAGE MOSFET (AH2MOS)