......DE....FRGB....................................................................................*JDIM360 Ver 2.15 (14 Jul 2008) - 2999001/01779438CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120120321W172deBibliographieenBibliographyfrBibliographieEP05755884.3200506222007010920090929enenen200421098920040720JP2012032120121220070502200718201201182012032011072720120321201212H01L 29/778 20060101AFI20060220BHEP H01L 21/335 20060101ALI20060220BHEP deIII-V-HEMT-BAUELEMENTEenIII-V HEMT DEVICESfrDISPOSITIFS A TRANSISTORS HEMT SUR MATERIAUX III-VWO-A-01/57929US-A1- 2003 173 578SU Y-K ET AL: "FLICKER NOISE OF GAN-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH SI-DOPED ALGAN CARRIER INJECTION LAYER" IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, vol. 24, no. 10, October 2003 (2003-10), pages 622-624, XP001175117 ISSN: 0741-3106PATENT ABSTRACTS OF JAPAN vol. 2003, no. 06, 3 June 2003 (2003-06-03) -& JP 2003 059946 A (FURUKAWA ELECTRIC CO LTD:THE), 28 February 2003 (2003-02-28) cited in the applicationSugimoto, Masahiro; c/o Toyota Jidosha K. K.Toyota-cho,Toyota-shi, Aichi 4718571JPKachi, Tetsu; c/o K. K. Toyota Chuo Kenkyusho41-1, Aza Yokomichi, Oaza Nagakute; Nagakute-choAichi-gun, Aichi 4801192JPNakano, Yoshitaka; c/o K. K. Toyota Chuo Kenkyusho41-1,Aza Yokomichi, Oaza Nagakute; Nagakute-choAichi-gun, Aichi 4801192JPUesugi, Tsutomu; c/o K. K. Toyota Chuo Kenkyusho41-1,Aza Yokomichi, Oaza Nagakute; Nagakute-choAichi-gun, Aichi 4801192JPUeda, Hiroyuki; c/o K. K. Toyota Chuo Kenkyusho41-1,Aza Yokomichi, Oaza Nagakute; Nagakute-choAichi-gun, Aichi 4801192JPSoejima, Narumasa; c/o K. K. Toyota Chuo Kenkyusho41-1,Aza Yokomichi, Oaza Nagakute;Nagakute-choAichi-gun, Aichi 4801192JPToyota Jidosha Kabushiki Kaisha10024121358/TY00R69/EP1, Toyota-cho,Toyota-shi, Aichi-ken, 471-8571JPKuhnen & Wacker100061025Patent- und Rechtsanwaltsbüro Prinz-Ludwig-Strasse 40A85354 FreisingDEDEFRGBJP200501189120050622enWO20060089252006012620060420070502200718