(19)
(11) EP 1 782 455 A1

(12)

(43) Date of publication:
09.05.2007 Bulletin 2007/19

(21) Application number: 05760110.6

(22) Date of filing: 06.07.2005
(51) International Patent Classification (IPC): 
H01L 21/02(2006.01)
H01L 21/301(2006.01)
H01L 27/04(2006.01)
H01L 29/786(2006.01)
G06K 19/07(2006.01)
H01L 27/12(2006.01)
H01L 21/822(2006.01)
H01L 21/336(2006.01)
H01L 21/304(2006.01)
G06K 19/077(2006.01)
(86) International application number:
PCT/JP2005/012875
(87) International publication number:
WO 2006/006611 (19.01.2006 Gazette 2006/03)
(84) Designated Contracting States:
DE FI FR GB NL

(30) Priority: 09.07.2004 JP 2004203906

(71) Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Atsugi-shi, Kanagawa 243-0036 (JP)

(72) Inventors:
  • TSURUME, Takuya, SEMICONDUCTOR ENERGY LAB. CO. LTD
    Kanagawa 2430036 (JP)
  • DAIRIKI, Koji, SEMICONDUCTOR ENERGY LAB. CO., LTD.
    Kanagawa 2430036 (JP)
  • KUSUMOTO, Naoto, SEMICONDUCTOR ENERGY LAB. CO. LTD
    Kanagawa 2430036 (JP)

(74) Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät 
Maximilianstrasse 58
80538 München
80538 München (DE)

   


(54) IC CHIP AND ITS MANUFACTURING METHOD