(19)
(11) EP 1 788 619 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
09.09.2009 Bulletin 2009/37

(43) Date of publication A2:
23.05.2007 Bulletin 2007/21

(21) Application number: 06123926.5

(22) Date of filing: 13.11.2006
(51) International Patent Classification (IPC): 
H01L 21/205(2006.01)
H01S 5/323(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK RS

(30) Priority: 18.11.2005 KR 20050110882
19.10.2006 KR 20060102046

(71) Applicant: Samsung Electronics Co., Ltd.
Suwon-si, Gyeonggi-do 442-743 (KR)

(72) Inventors:
  • Paek, Ho-sun, c/o Samsung Adv. Inst. of Techn.
    Yongin-sin, Gyeonggi-do (KR)
  • Lee, Sung-nam, c/o Samsung Adv. Inst. of Techn.
    Yongin-sin, Gyeonggi-do (KR)
  • Son, Joong-kon, c/o Samsung Adv. Inst. of Techn.
    Yongin-sin, Gyeonggi-do (KR)
  • Sakong, Tan, c/o Samsung Adv. Inst. of Techn.
    Yongin-sin, Gyeonggi-do (KR)

(74) Representative: Greene, Simon Kenneth 
Elkington and Fife LLP Prospect House 8 Pembroke Road
Sevenoaks Kent TN13 1XR
Sevenoaks Kent TN13 1XR (GB)

   


(54) Semiconductor device and method of fabricating the same


(57) Provided are a semiconductor device having an improved surface morphology characteristic, and a method of fabricating the same. The semiconductor device includes: an r-plane sapphire substrate (12); an AlxGa(1-x)N(0≤ x<1) buffer layer (14) epitaxially grown on the r-plane sapphire substrate to a thickness in the range of 100-20000 Å in a gas atmosphere containing nitrogen (N2) and at a temperature of 900-1100°C; and a first a-plane GaN layer (16) formed on the buffer layer.







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