CROSS-REFERENCE TO RELATED APPLICATIONS
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
INCORPORATION BY REFERENCE OF MATERIAL SUBMITTED ON A COMPACT DISC
COPYRIGHTED MATERIAL
BACKGROUND OF THE INVENTION
Field of the Invention (Technical Field):
[0005] The present invention relates to energetic material initiators.
Description of Related Art:
[0006] The initiation of an energetic material requires that a stable and reliable fuze
mechanism activate the chemical reaction at a desired time. Fuzes are often used in
conjunction with a safe and arm mechanism.. Electronic Safe and Arm Fuze (ESAF) designs
are increasingly being used due to their flexibility in state sensing, response logic
and use of electricity as the initiating power source. The initiator is the component
of the ESAF that converts the electrical energy to a form that can initiate the energetic
material. The finished initiator package volume, the cost of initiator fabrication,
the repeatability of initiator fabrication, and the required power to initiate an
energetic chemical reaction must be minimized while reliability, resistance to misfire,
and durability must be maximized for optimum service.
[0007] Electro-Explosive Devices (EEDs) typically incorporate hot wire, semiconductor bridge,
or exploding foil type initiators. Existing types of EEDs involve resistance heating
(and relatively high power) to produce a high temperature used to trigger a fuze chain
or energetic material. Existing devices that employ thin films include the following
references..
[0009] U.S. Patent No. 5,732,634, titled "Thin Film Bridge Initiators and Method of Manufacture", to Flickinger, et
al., discloses a vapor deposited thin film that produces a high temperature when a
relatively high current is passed through it. Again, the film does not comprise a
reactive material.
[0010] U.S. Patent No. 6,276,276, titled "Thin-Film Optical Initiator", to Erickson, discloses a film used in conjunction
with an optical power input (laser).. The laser heats a thin-film material which produces
a high temperature which then initiates an output charge.
[0011] The use of the multilayered thin film Exploding Film Initiator (EFI) of the invention
provides a greater initial energy output then a conventional EFI for an equivalent
input energy and can be tailored for initiation sensitivity and maximum achievable
temperature. Once initiated, relatively high temperatures can be reached by the EFI
through the release of chemically stored energy upon reaction of the EFI component
materials.
BRIEF SUMMARY OF THE INVENTION
[0012] The present invention is of an energetic thin film initiator and a method of making
same, comprising: providing a plurality of thin film layers of fuel; providing a plurality
of thin film layers of oxidizer, at least one interposed between two of the thin layers
of fuel; and providing an electrical input to the thin film layers that upon receipt
of an electrical pulse causes ignition of layers of fuel and oxidizer. In the preferred
embodiment, the electrical input comprises a pair of conductive electrical leads.
A silicon wafer substrate is preferred for the thin film layers. An electrical pulse
of less than or equal to approximately 2 watts causes ignition. A resultant temperature
of the ignition is preferably at least approximately 4600 degrees F.. The thin film
layers are tailored for one or more properties selected from stored chemical energy
content, maximum achievable reaction temperature, maximum reaction rate, deposition
thickness, and required deposition area. The thin film layers have a thickness of
less than approximately 100 micrometers for appropriate applications and less than
approximately 100 nanometers for others. The ignition primarily results from free
energy release associated with intermetallic reactions or from free energy release
associated with oxidation-reduction reactions.
[0013] Objects, advantages and novel features, and further scope of applicability of the
present invention will be set forth in part in the detailed description to follow,
taken in conjunction with the accompanying drawings, and in part will become apparent
to those skilled in the art upon examination of the following, or may be learned by
practice of the invention. The objects and advantages of the invention may be realized
and attained by means of the instrumentalities and combinations particularly pointed
out in the appended claims.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0014] The accompanying drawings, which are incorporated into and form a part of the specification,
illustrate one or more embodiments of the present invention and, together with the
description, serve to explain the principles of the invention. The drawings are only
for the purpose of illustrating one or more preferred embodiments of the invention
and are not to be construed as limiting the invention. In the drawings:
Fig 1 is a schematic diagram of a first embodiment of the invention; and
Fig. 2 is a schematic diagram of a second embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0015] The present invention relates to the production of an electro-explosive device (EED)
utilizing an exploding film initiator (EFI). In particular this invention relates
to the production of an EED by the application of a multilayered thin-film EFI. Using
developed and highly repeatable batch processing approaches involving thin-film deposition,
an energetic structure is fabricated by depositing layers of reactants onto a selected
substrate. The adjacent reactants form a repeating unit that is duplicated multiple
times during the thin-film deposition process until sufficient quantity of material
is accumulated on the substrate to function as an energetic initiator. Among other
possible initiation methods, a pair of electrical leads can supply a relatively low
voltage to the thin-film structure resulting in ohmic heating and reaction of the
initiator. This reaction is rapid and produces a high-temperature that, when placed
in contact with a fuze chain or another energetic material, results in the triggering
of another event. Relatively low power is required to produce sufficient heat within
the energetic material to release the chemical energy within this type of initiator,
and the fabrication process can be fully automated to produce structures that have
consistent reaction properties. Thin film deposition processes permit precise control
over the deposited structure geometry in such a way that the initiator can be tailored
for a variety of applications.. Thin-film deposition processes also permit the deposition
of insulating structures to electrically, thermally, or physically isolate the initiator
from its surrounding environment.
[0016] Figs. 1-2 show the preferred embodiments
10,30 of the invention, albeit not to scale. In Fig.. 1, the energetic thin film initiator
of the invention comprises a pair of layers
16,18 preferably on substrate
12, one layer of which comprises fuel and the other oxidizer. Electrical conductors
14,14' carry electrical impulses. The initiator ignites secondary energetic material
20. In Fig. 2, a plurality of pairs of layers of fuel/oxidizer are employed.
[0017] For example, a thin-film initiator can be deposited on a silicon wafer substrate.
The substrate is in part used to retain/protect thin-film initiator during handling.
After experiencing an electrical impulse (on the order of 2 watts or less) or other
sufficiently initiating stimulus, the deposited material reaction begins. The resultant
temperature of the thin-film reaction might be, for example, about 4600 degrees F;
but again, can be tailored by design the thin film deposition thickness of the various
layers and the selected deposition materials.
[0018] The deposited materials are selected for tailored performance regarding properties
such as stored chemical energy content, maximum achievable reaction temperature, and
maximum reaction rate, traded against deposition thickness and required deposition
area. Exothermic reaction of deposited materials result from the free energy release
associated with intermetallic reactions, or from oxidation-reduction reactions. The
selected reactive materials are deposited such that reactants are positioned in close
proximity (nanometer (i.e., thin films of thickness less than approximately 100 nanometers)
or micrometer (i.e., thin films of thickness less than approximately 100 micrometers)
scale). Repeated deposition of reactants in a layered structure increases the stored
energy content per unit area.
[0020] To reiterate, the initiator of the invention produces high thermal energy when a
relatively low electrical input is applied to the material releasing stored chemical
energy. The device can be fabricated using a variety of thin-film deposition techniques
to tailor the input (activation) requirements for initiation, and the resultant output
properties to suit the application When an electrical impulse is applied to the initiator
material, it starts a chemical reaction that releases stored chemical energy producing
a high temperature. This resultant high temperature is much greater than the electrical
impulse could have produced by itself.
[0021] Although the invention has been described in detail with particular reference to
these preferred embodiments, other embodiments can achieve the same results.. Variations
and modifications of the present invention will be obvious to those skilled in the
art and it is intended to cover in the appended claims all such modifications and
equivalents. The entire disclosures of all references, applications, patents, and
publications cited above are hereby incorporated by reference.
1. An energetic thin film initiator comprising:
a plurality of thin film layers of fuel;
a plurality of thin film layers of oxidizer, at least one interposed between two of
said thin layers of fuel; and
an electrical input to the thin film layers that upon receipt of an electrical pulse
causes ignition of layers of fuel and oxidizer.
2. The initiator of claim 1 wherein said electrical input comprises a pair of conductive
electrical leads.
3. The initiator of claim 1 additionally comprising a silicon wafer substrate for said
thin film layers.
4. The initiator of claim 1 wherein an electrical pulse of less than or equal to approximately
2 watts causes ignition.
5. The initiator of claim 1 wherein a resultant temperature of said ignition is at least
approximately 4600 degrees F.
6. The initiator of claim 1 wherein said thin film layers are tailored for one or more
properties selected from the group consisting of stored chemical energy content, maximum
achievable reaction temperature, maximum reaction rate, deposition thickness, and
required deposition area.
7. The initiator of claim 1 wherein said thin film layers have a thickness of less than
approximately 100 micrometers..
8. The initiator of claim 7 wherein said thin film layers have a thickness of less than
approximately 100 nanometers..
9. The initiator of claim 1 wherein said ignition primarily results from free energy
release associated with intermetallic reactions.
10. The initiator of claim 1 wherein said ignition primarily results from free energy
release associated with oxidation-reduction reactions.
11. A method of making an energetic thin film initiator, the method comprising:
providing a plurality of thin film layers of fuel;
providing a plurality of thin film layers of oxidizer, at least one interposed between
two of the thin layers of fuel; and
providing an electrical input to the thin film layers that upon receipt of an electrical
pulse causes ignition of layers of fuel and oxidizer.
12. The method of claim 11 wherein the electrical input comprises a pair of conductive
electrical leads.
13. The method of claim 11 additionally comprising the step of providing a silicon wafer
substrate for the thin film layers.
14. The method of claim 11 wherein an electrical pulse of less than or equal to approximately
2 watts causes ignition.
15. The method of claim 11 wherein a resultant temperature of the ignition is at least
approximately 4600 degrees F.
16. The method of claim 11 additionally comprising the step of tailoring the thin film
layers for one or more properties selected from the group consisting of stored chemical
energy content, maximum achievable reaction temperature, maximum reaction rate, deposition
thickness, and required deposition area.
17. The method of claim 11 wherein the thin film layers have a thickness of less than
approximately 100 micrometers.
18. The method of claim 17 wherein the thin film layers have a thickness of less than
approximately 100 nanometers.
19. The method of claim 11 wherein the ignition primarily results from free energy release
associated with intermetallic reactions.
20. The method of claim 11 wherein the ignition primarily results from free energy release
associated with oxidation-reduction reactions.