INSULATED GATE FIELD EFFECT TRANSISTORS - Patent 1820217

(19)

(11)

EP 1 820 217 A2

(12)

(43)	Date of publication:
	22.08.2007 Bulletin 2007/34

(21)	Application number: 05821637.5

(22)	Date of filing: 01.12.2005

(51)

International Patent Classification (IPC):

H01L 29/00^(2006.01)

(86)	International application number:
	PCT/IB2005/053994

(87)	International publication number:
	WO 2006/059300 (08.06.2006 Gazette 2006/23)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
	Designated Extension States:
	AL BA HR MK YU

(30)

Priority:

02.12.2004 GB 0426412

(71)	Applicant: Koninklijke Philips Electronics N.V.
	5621 BA Eindhoven (NL)

(72)	Inventor:
	BROWN, Adam, Philips Int. Property & Standards Redhill Surrey RH1 5HA (GB)

(74)	Representative: White, Andrew Gordon
	NXP Semiconductors IP Department Cross Oak Lane Redhill, Surrey RH1 5HA Redhill, Surrey RH1 5HA (GB)

(54)	INSULATED GATE FIELD EFFECT TRANSISTORS