(19)
(11) EP 1 825 519 A1

(12)

(43) Date of publication:
29.08.2007 Bulletin 2007/35

(21) Application number: 05821307.5

(22) Date of filing: 05.12.2005
(51) International Patent Classification (IPC): 
H01L 29/772(2006.01)
(86) International application number:
PCT/KR2005/004116
(87) International publication number:
WO 2006/062317 (15.06.2006 Gazette 2006/24)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

(30) Priority: 08.12.2004 KR 20041033063
11.05.2005 KR 20050039098

(71) Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Daejeon-city 305-350 (KR)

(72) Inventors:
  • YOUN, Doo-hyeb
    Daejeon-city 305-761 (KR)
  • KIM, Hyun-tak
    Daejeon-city 305-761 (KR)
  • CHAE, Byung-gyu
    Daejeon-city 305-350 (KR)
  • MAENG, Sung-lyul
    Cheongju-city, Chungcheongbuk-do 361-808 (KR)
  • KANG, Kwang-yong
    Daejeon-city 305-707 (KR)

(74) Representative: Betten & Resch 
Patentanwälte, Theatinerstrasse 8
80333 München
80333 München (DE)

   


(54) DEVICE USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE