(19)
(11) EP 1 830 416 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
24.10.2007 Bulletin 2007/43

(43) Date of publication A2:
05.09.2007 Bulletin 2007/36

(21) Application number: 06124077.6

(22) Date of filing: 18.12.2003
(51) International Patent Classification (IPC): 
H01S 5/028(2006.01)
H01S 5/323(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

(30) Priority: 20.12.2002 US 435213 P
20.12.2002 US 434914 P
20.12.2002 US 434999 P
20.12.2002 US 435211 P

(62) Application number of the earlier application in accordance with Art. 76 EPC:
03800027.9 / 1573870

(71) Applicant: Cree Inc.
Durham, North Carolina 27703 (US)

(72) Inventors:
  • Haberern, Kevin W
    Cary, NC 27511 (US)
  • Rosado, Raymond
    Apex, NC 27502 (US)
  • Bergmann, Michael J
    Chapel Hill, NC 27516 (US)
  • Emerson, David T
    Durham, NC 27707 (US)

(74) Representative: Johnstone, Douglas Ian et al
Baron & Warren, 19 South End, Kensington
London W8 5BU
London W8 5BU (GB)

   


(54) Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices


(57) A method of forming a semiconductor device may include forming a semiconductor structure (14) on a substrate (12) wherein the semiconductor structure (14) defines a mesa (20) having a mesa surface (20A) opposite the substrate (12) and mesa sidewalls between the mesa surface and the substrate. A first passivation layer (30) can be formed on at least portions of the mesa sidewalls and on the substrate (12) adjacent the mesa sidewalls wherein at least a portion of the mesa surface (20A) is free of the first passivation layer (30) and wherein the first passivation layer (30) comprises a first material. A second passivation layer (40) can be formed on the first passivation layer (30) wherein at least a portion of the mesa surface (20A) is free of the second passivation layer (40), and wherein the second passivation layer (40) comprises a second material different than the first material. Related devices are also discussed.







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