|
(11) | EP 1 830 416 A3 |
(12) | EUROPEAN PATENT APPLICATION |
|
|
|
|
|||||||||||||||||||||||
(54) | Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices |
(57) A method of forming a semiconductor device may include forming a semiconductor structure
(14) on a substrate (12) wherein the semiconductor structure (14) defines a mesa (20)
having a mesa surface (20A) opposite the substrate (12) and mesa sidewalls between
the mesa surface and the substrate. A first passivation layer (30) can be formed on
at least portions of the mesa sidewalls and on the substrate (12) adjacent the mesa
sidewalls wherein at least a portion of the mesa surface (20A) is free of the first
passivation layer (30) and wherein the first passivation layer (30) comprises a first
material. A second passivation layer (40) can be formed on the first passivation layer
(30) wherein at least a portion of the mesa surface (20A) is free of the second passivation
layer (40), and wherein the second passivation layer (40) comprises a second material
different than the first material. Related devices are also discussed.
|