(19)
(11) EP 1 842 239 A2

(12)

(43) Date of publication:
10.10.2007 Bulletin 2007/41

(21) Application number: 06718789.8

(22) Date of filing: 19.01.2006
(51) International Patent Classification (IPC): 
H01L 29/78(2006.01)
H01L 21/8238(2006.01)
(86) International application number:
PCT/US2006/001768
(87) International publication number:
WO 2006/078740 (27.07.2006 Gazette 2006/30)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK YU

(30) Priority: 19.01.2005 US 905745

(71) Applicant: International Business Machines Corporation
Armonk, New York 10504 (US)

(72) Inventors:
  • CHEN, Xiangdong
    Poughquag, New York 12570 (US)
  • YANG, Haining, S.
    Wappingers Falls, New York 12590 (US)

(74) Representative: Williams, Julian David 
IBM United Kingdom Limited Intellectual Property Law Hursley Park
Winchester Hampshire SO21 2JN
Winchester Hampshire SO21 2JN (GB)

   


(54) STRUCTURE AND METHOD TO OPTIMIZE STRAIN IN CMOSFETS