FLASH MEMORY CELL HAVING BURIED FLOATING GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - Patent 1849188

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EP 1 849 188 A1

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(43)	Date of publication:
	31.10.2007 Bulletin 2007/44

(21)	Application number: 06703617.8

(22)	Date of filing: 24.01.2006

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International Patent Classification (IPC):

H01L 27/115^(2006.01)

(86)	International application number:
	PCT/KR2006/000257

(87)	International publication number:
	WO 2006/085718 (17.08.2006 Gazette 2006/33)

(84)	Designated Contracting States:
	DE FR IT

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Priority:

14.02.2005 KR 20050011803

(71)	Applicant: Excel Semiconductor Inc.,
	Seongnam-si, Gyeonggi-do 462-807 (KR)

(72)	Inventors:
	Jang, Yoon Soo, 909-604, Yongin-suji Yongin-si, Gyeonggi-do 462-170 (KR) Park, Kwang Seocho-gu, Seoul 137-060 (KR) Song, Bok Nam Seongnam-si, Gyeonggi-do 463-901 (KR) Choi, Seounk Ouk, Ga-103, KyungNam Villa Anyang-si, Gyeonggi-do 431070 (KR) Kim, Han Heung Bucheon-si, Gyeonggi-do 420-020 (KR)

(74)	Representative: Neobard, William John et al
	Kilburn & Strode 20 Red Lion Street London WC1R 4PJ London WC1R 4PJ (GB)

(54)	FLASH MEMORY CELL HAVING BURIED FLOATING GATE STRUCTURE AND METHOD OF MANUFACTURING THE SAME