(19)
(11) EP 1 852 480 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
12.12.2012 Bulletin 2012/50

(45) Mention of the grant of the patent:
26.09.2012 Bulletin 2012/39

(21) Application number: 07007629.4

(22) Date of filing: 13.04.2007
(51) International Patent Classification (IPC): 
H01L 21/02(2006.01)
H01L 21/321(2006.01)
C30B 29/40(2006.01)
 C09G 1/02(2006.01)
C30B 33/00(2006.01)

(54)

Method of processing a surface of group III nitride crystal and group III nitride crystal substrate

Verfahren zum Bearbeiten einer Oberfläche aus Gruppe-III-Nitrid-Kristall und Gruppe-III-Nitrid-Kristallsubstrat

Procédé pour le traitement d'une surface de cristal de nitrure du groupe III et substrat de cristal de nitrure du groupe III

(84) Designated Contracting States:
DE FR GB

(30) Priority: 01.05.2006 JP 2006127443

(43) Date of publication of application:
07.11.2007 Bulletin 2007/45

(73) Proprietor: Sumitomo Electric Industries, Ltd.
Osaka 541 0041 (JP)

(72) Inventors:
  • Nishiura, Takayuki
    Itami-shi Hyogo 664-0016 (JP)
  • Ishibashi, Keiji
    Itami-shi Hyogo 664-0016 (JP)

(74) Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser 
Leopoldstrasse 4
80802 München
80802 München (DE)


(56) References cited: : 
EP-A- 1 717 286
 US-B1- 6 488 767
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).