(19)
(11) EP 1 858 025 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
18.03.2009 Bulletin 2009/12

(45) Mention of the grant of the patent:
24.12.2008 Bulletin 2008/52

(21) Application number: 07108189.7

(22) Date of filing: 14.05.2007
(51) International Patent Classification (IPC): 
G11C 11/406(2006.01)
G11C 11/403(2006.01)
 G11C 11/402(2006.01)

(54)

Semiconductor memory operated by internal and external refresh

Halbleiterspeicher mit internem und externem Refresh

Mémoire à semi-conducteur à rafraîchissement interne et externe

(84) Designated Contracting States:
DE FR GB

(30) Priority: 18.05.2006 JP 2006138840

(43) Date of publication of application:
21.11.2007 Bulletin 2007/47

(73) Proprietor: Fujitsu Microelectronics Limited
Tokyo 163-0722 (JP)

(72) Inventor:
  • Kawakubo, Tomohiro
    Kawasaki-shi, Kanagawa 211-8588 (JP)

(74) Representative: Wilding, Frances Ward 
Haseltine Lake Lincoln House
300 High Holborn London WC1V 7JH
300 High Holborn London WC1V 7JH (GB)


(56) References cited: : 
JP-A- 63 020 798
US-A- 5 566 119
 US-A- 5 208 779
US-B1- 6 438 055
   
       
    Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).