[0001] The present invention concerns a sputter ion pump having an improved magnet assembly.
[0002] As known, and referring to Fig. 1, a sputter ion pump 10 is a device for producing
high vacuum conditions. It comprises a vacuum enclosure 20 housing at least one anode
30 consisting of a plurality of hollow cylindrical pump cells 40, and a cathode 50
consisting of plates, e.g. made of titanium, located on opposite ends of cells 40.
Pump 10 comprises means 60 for applying to the anode a higher potential than the cathode
potential. Magnets 70 located external to enclosure 20, at opposite ends of pump cells
40, are further provided for producing a magnetic field oriented parallel to the axes
of said pump cell.
[0003] During operation, when a potential difference is applied between anode 30 and cathode
50 (typically, 3 to 9 kV), a strong electric field region is generated between anode
cells 40 and cathode 50, resulting in electron emission from the cathode, the electrons
being then captured in the anode cells. Electrons collide with and ionise gas molecules
inside pump cells 40. The resulting positive ions, because of the electric field,
are attracted by cathode 50 and collide with the surface thereof. Ion collision with
the titanium plates forming cathode 50 results in the "sputtering" phenomenon, that
is, the emission of titanium atoms from the cathode surface.
[0004] The provision of magnets 70 for generating a magnetic field B allows imparting helical
trajectories to electrons, so as to increase the lengths of their paths between the
cathode and the anode and, consequently, the chances of colliding with gas molecules
inside the pump cells and ionising such molecules.
[0005] A drawback of prior art ion pumps is the considerable decrease in the pumping speed
at low pressures.
[0006] Different parameters exist that affect the pumping speed of an ion pump and that
can be acted upon. One such parameter is the magnetic field strength.
[0007] In this respect, international patent application
WO 2004/061889 discloses an ion pump in which the magnetic field strength is changed by providing
additional magnets. More particularly, the ion pump disclosed in
WO 2004/061889 includes primary magnets of opposite polarities disposed on opposite ends of the
pump cells, and secondary magnets disposed on two opposite sides of the pump cells,
perpendicularly to the primary magnets. Possibly, additional secondary magnets can
be provided on two other opposite sides of the pump cells, perpendicularly to both
the primary magnets and the other secondary magnets.
[0008] Use of magnetic assemblies including perpendicular pairs of primary magnets and secondary
magnets in order to achieve a high strength magnetic field was already known, e.g.,
from
US 4,937,545.
[0009] Yet, also the solution proposed in
WO 2004/061889 has some non-negligible drawbacks, depending in particular on the considerable size
and weight increase due to the provision of secondary magnets along two, or even four
sides of the pump cells.
[0010] It is therefore an object of the present invention to overcome the drawbacks of the
prior art, by providing a sputter ion pump capable of providing satisfactory pumping
speeds even at low pressures, while having limited overall size and weight.
[0011] It is another object of the present invention to provide a sputter ion pump that
is simple and cheap to manufacture.
[0012] Experimental studies carried out by the Applicant have surprisingly shown that providing
secondary magnets disposed on only one side of the pump cells, even though it leads
to an asymmetric configuration of the magnetic assembly, is sufficient to ensure an
increase in the magnetic field strength and a corresponding increase in the pumping
speed, even at low pressures.
[0013] Thanks to the above asymmetric configuration of the pumping assembly, an ion pump
can be obtained that has reduced size, weight and manufacturing costs as compared
to the pump disclosed in
WO 2004/061889, which has a symmetric configuration of the magnetic assembly.
[0014] Further features and advantages of the sputter ion pump in accordance with the invention
will become more apparent from the detailed description of some preferred embodiments
of the invention, given by way of non limiting examples, with reference to the accompanying
drawings, in which:
- Fig. 1 is a cross sectional schematic view of a prior art ion pump;
- Fig. 2 is a perspective schematic view of a ion pump according to a first embodiment
of the invention;
- Fig. 3 is a schematic side view of the ion pump of Fig. 2;
- Figs. 4A and 4B are graphs showing the behaviour of the transversal magnetic field
component in a longitudinal cross-section of a prior art pump and of the pump of Fig.
2, respectively;
- Fig. 5 is a graph showing the behaviour of the pumping speed as a function of pressure
for a prior art ion pump and for the ion pump of Fig. 2;
- Fig. 6 is a perspective schematic view of a ion pump according to a second embodiment
of the invention;
- Fig. 7 is a schematic side view of the ion pump of Fig. 6.
[0015] Referring to Figs 2 and. 3, there is shown a sputter ion pump according to a first
embodiment of the invention.
[0016] Ion pump 1 comprises a vacuum enclosure 3 housing the plates forming the cathode
and the pump cells forming the anode. Vacuum enclosure 3 and the components housed
therein, which are made in accordance with the prior art shown in Fig. 1, will not
be further described.
[0017] Vacuum enclosure 3 is connected to a connecting flange 5 for connecting pump 1 with
a chamber to be evacuated and is provided with a high voltage electric feedthrough
7 allowing pump connection to a power supply.
[0018] Primary magnets 9a, 9b are located external to vacuum enclosure 3, at opposite ends
of the cylindrical anode pump cells, for producing a magnetic field parallel to the
pump cell axes.
[0019] In accordance with the invention, in order to achieve a high pumping speed even at
low pressures, a secondary magnet assembly 11, comprising one or more magnets, is
provided on one side only of pump cells 3 housed within enclosure 3. More particularly,
in the illustrated example, secondary magnet assembly 11 is provided only on the bottom
side of enclosure 3, opposite connecting flange 5.
[0020] The magnets in secondary magnet assembly 11 (or secondary magnets) are so arranged
as to produce a magnetic field in orthogonal direction to the field produced by primary
magnets 9a, 9b, thereby reducing the edge effects of the primary magnets.
[0021] Preferably, secondary magnets 11 are permanent magnets.
[0022] As shown in Figs. 2 and 3, pump 1 is equipped with a substantially U-shaped bearing
structure 13 associated with enclosure 3, primary and secondary magnets 9a, 9b, 11
being secured to that structure by means of screws 15.
[0023] Referring in particular to Fig. 3, it can be appreciated that, in the illustrated
embodiment, secondary magnet assembly 11 includes two secondary magnets 11', 11" arranged
side by side and having opposite polarities.
[0024] Referring to Figs. 4A and 4B, there is shown the strength of the transversal magnetic
field component (in Tesla) in a longitudinal cross-section respectively of a prior
art pump made in accordance with the layout of Fig. 1 and of the pump in accordance
with the invention, in the embodiment shown in Figs. 2 and 3. The dotted-line rectangle
corresponds to the region occupied by the pump cells forming the pump anode.
[0025] As it is clearly apparent, the provision of secondary magnets 11 results in a considerable
increase in magnetic field strength. More particularly, thanks to secondary magnets
11, there is a considerable increase in the region where the transversal magnetic
field component exceeds a critical value (0.14 Tesla in the illustrated example),
above which the maximum efficiency of the pump cells is achieved.
[0026] Actually, as known, two different pumping modes are associated with sputter ion pumps,
namely a high magnetic field (HMF) mode and a low magnetic field (LMF) mode. If the
magnetic field inside the ion pump falls below a critical value, the transition from
HMF pumping mode to LMF pumping mode occurs, with a consequent reduction in the pumping
speed. The critical value of the magnetic field is a function of pressure and, more
particularly, it increases as pressure decreases, so that remaining above the critical
value as pressure decreases is more and more difficult.
[0027] Thus, a stronger magnetic field (in particular above 0.14 Tesla, in the illustrated
example) results in maintaining HMF pumping mode also at very low pressures, consequently
improving the pumping speed.
[0028] In this respect, in Fig. 5, the behaviour of the pumping speed versus pressure for
the ion pump of Figs. 2 and 3 is shown and compared to the behaviour of a prior art
pump made in accordance with the layout of Fig. 1. It can be appreciated that both
curves have substantially the same behaviour in the pressure range 10
-6 to 10
-8 mbars (10
-4 to 10
-6 Pa), even if the ion pump in accordance with the invention allows attaining pumping
speeds exceeding by about 20% those of a pump without secondary magnets.
[0029] The main difference can however be appreciated in the pressure range 10
-8 to 10
-9 mbars (10
-6 to 10
-7 Pa). In the case of the pump in accordance with the invention, the pumping speed
decreases as pressure decreases, but the pumping speed loss keeps limited. On the
contrary, without secondary magnets, the pumping speed suffers from an extremely strong
reduction. Consequently, at pressures close to 10
-9 mbars (10
-7 Pa), the pumping speed of a pump in accordance with the invention is about twice
the pumping speed of a pump lacking secondary magnets, but otherwise identical.
[0030] Turning now back to Fig. 4B, it is interesting to note that the strength of the transversal
magnetic field component exceeds the critical value in a larger portion of the region
occupied by the pump cells as compared to the prior art solutions, and, in particular,
that, notwithstanding the asymmetric arrangement of the secondary magnets in accordance
with the invention, such a strength exceeds said critical value over the whole central
area of said region and not only on the side closest to secondary magnet assembly
11.
[0031] Thus, as stated above, a sputter ion pump with satisfactory pumping speed even at
low pressures can be obtained by using a reduced number of secondary magnets disposed
on a single side of the pump cells and, consequently, by keeping the size, the weight
and the manufacturing costs limited as compared to the ion pump disclosed in
WO 2004/061889.
[0032] Thus, the pump in accordance with the invention attains the desired aims.
[0033] Turning now to Figs. 6 and 7, there is shown a second preferred embodiment of pump
1 in accordance with the invention.
[0034] In accordance with that second embodiment, a plate 17 is provided on the side of
vacuum enclosure 3 opposite to secondary magnets 11 in order to confine inside the
pump the magnetic field due to the provision of secondary magnets 11.
[0035] To this end, said plate 17 is made of a ferromagnetic material.
[0036] In Figs. 6 and 7, being secondary magnets 11 disposed on the bottom side of pump
1, plate 17 is located at the top side of the pump, is secured to bearing structure
13 through screws 19 and is so shaped as to allow the neck of connecting flange 5
to pass.
[0037] It is clear that the above description has been given by way of non-limiting example
and that several changes and modifications can be included within the inventive principle
upon which the present invention is based.
[0038] By way of example, a number of secondary magnets other than two could be provided,
or the secondary magnets could be disposed on a different side of the vacuum enclosure,
without departing from the scope of the invention.
1. A sputter ion pump (1) comprising:
- a vacuum enclosure (3) equipped with a connecting flange (5) for connecting the
pump with a chamber to be evacuated;
- an anode, located inside said enclosure and consisting of a plurality of pump cells;
- a cathode, located inside said enclosure and consisting of plates located at opposite
ends of said pump cells;
- primary magnets (9a, 9b), located on opposite ends of said pump cells, for producing
a magnetic field coaxial with said pump cells;
characterised in that said pump (1) further comprises secondary magnets (11; 11', 11") disposed on one
side only of said pump cells, so as to confer an asymmetrical configuration to the
magnetic assembly consisting of said primary magnets (9a, 9b) and said secondary magnets
(11; 11', 11 ").
2. The sputter ion pump (1) as claimed in claim 1, wherein said secondary magnets (11;
11', 11") are disposed on the side of said enclosure (3) opposite to said connecting
flange (5).
3. The sputter ion pump (1) as claimed in claim 1, wherein two said secondary magnets
(11; 11', ,11") are provided and are arranged with opposite polarities.
4. The sputter ion pump (1) as claimed in any preceding claim, wherein said secondary
magnets (11; 11', 11 ") are permanent magnets.
5. The sputter ion pump (1) as claimed in any preceding claim, wherein said primary magnets
(9a, 9b) and said secondary magnets (11; 11', 11") are housed within a substantially
U-shaped bearing structure (13) secured to said enclosure (3).
6. The sputter ion pump (1) as claimed in any preceding claim, wherein said pump (1)
further comprises a plate (17) located on the side of said enclosure (3) opposite
to said secondary magnets (11; 11', 11").
7. The sputter ion pump (1) as claimed in claim 6, wherein said plate (17) is made of
ferromagnetic material, so as to confine the magnetic field generated by said secondary
magnets (11; 11', 11").