(19)
(11) EP 1 879 231 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
16.03.2011 Bulletin 2011/11

(43) Date of publication A2:
16.01.2008 Bulletin 2008/03

(21) Application number: 07111743.6

(22) Date of filing: 04.07.2007
(51) International Patent Classification (IPC): 
H01L 27/146(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK RS

(30) Priority: 10.07.2006 JP 2006189244

(71) Applicant: CANON KABUSHIKI KAISHA
Ohta-ku Tokyo 146-8501 (JP)

(72) Inventors:
  • Ura, Ken-ichiro
    Tokyo 146-8501 (JP)
  • Fukumoto, Yoshihiko
    Tokyo 146-8501 (JP)
  • Kataoka, Yuzo
    Tokyo 146-8501 (JP)

(74) Representative: TBK-Patent 
Bavariaring 4-6
80336 München
80336 München (DE)

   


(54) Photoelectric conversion device and image pickup system with photoelectric conversion device


(57) A photoelectric conversion device comprises a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type serving as a photoelectric conversion element together with a part of the first semiconductor region; a gate electrode transferring electric carriers generated in the photoelectric conversion element to a third semiconductor region of the second conductivity type. Moreover, the photoelectric conversion device comprises an isolation region for electrically isolating the second semiconductor region from a fourth semiconductor region of the second conductivity type adjacent to the second semiconductor region. Wiring for applying voltage to the gate electrode is arranged on the isolation region. Here, a fifth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is provided between the fourth semiconductor region and the isolation region.







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