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Designated Contracting States: |
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DE FR GB IT |
| (30) |
Priority: |
12.05.2005 JP 2005139451 10.08.2005 JP 2005231877 10.08.2005 JP 2005231966
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Date of publication of application: |
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23.01.2008 Bulletin 2008/04 |
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Proprietor: Ricoh Company, Ltd. |
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Tokyo 143-8555 (JP) |
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| (72) |
Inventors: |
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- SARAYAMA, Seiji
Sendai-shi, Miyagi, 9811105 (JP)
- IWATA, Hirokazu
Sendai-shi, Miyagi, 9813122 (JP)
- FUSE, Akihiro
Natori-shi, Miyagi, 9811244 (JP)
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| (74) |
Representative: Schwabe - Sandmair - Marx |
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Patentanwälte
Stuntzstraße 16 81677 München 81677 München (DE) |
| (56) |
References cited: :
JP-A- 2002 128 586 JP-A- 2003 313 098
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JP-A- 2003 238 296 JP-A- 2003 313 098
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- SARAYAMA S. AND IWATA H.: 'Flux-ho ni yoru Kohinshitsu Chikka Gallium no Kessho Seicho
(High Quality Crystal Growth of Gallium Nitride by Flux Method)' RICOH TECHNICAL REPORT
vol. 30, December 2004, pages 9 - 19, XP003003066
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