| (84) |
Designated Contracting States: |
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AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE
SI SK TR |
| (30) |
Priority: |
19.05.2005 US 683459 P
|
| (43) |
Date of publication of application: |
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13.02.2008 Bulletin 2008/07 |
| (73) |
Proprietors: |
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- NXP B.V.
5656 AG Eindhoven (NL)
- INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW
3001 Leuven (BE)
|
|
| (72) |
Inventors: |
|
- GOUX, Ludovic
Redhill Surrey RH1 5HA (GB)
- WOUTERS, Dirk
Redhill Surrey RH1 5HA (GB)
- LISONI, Judith
Redhill Surrey RH1 5HA (GB)
- GILLE, Thomas
Redhill Surrey RH1 5HA (GB)
|
| (74) |
Representative: Williamson, Paul Lewis et al |
|
NXP Semiconductors UK Ltd.
Intellectual Property Department
Betchworth House
Station Road Redhill
Surrey RH1 1DL Redhill
Surrey RH1 1DL (GB) |
| (56) |
References cited: :
EP-A- 1 202 285
|
US-A1- 2005 128 798
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| |
|
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- P. HARING BOLĂVAR, F. MERGET, D.-H. KIM, B. HADAM AND H. KURZ: "Lateral design for
phase change random access memory cells with low-current consumption" EUROPEAN SYMPOSIUM
ON PHASE CHANGE AND OVONIC SCIENCE SYMPOSIUM, [Online] September 2004 (2004-09), XP002398214
Retrieved from the Internet: URL:http://www.epcos.org/pdf_2004/19paper_ haringbolivar.pdf>
cited in the application
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