ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIRO..CY..TRBGCZEEHUPLSK....IS..........*JDIM360 Ver 2.15 (14 Jul 2008) - 2999001/01886317CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120090408W173deBibliographieenBibliographyfrBibliographieEP06744974.4200605182007121920080507enenen683459 P20050519US2009040820091520080213200807200901072009022008073020090408200915G11C 16/02 20060101AFI20061207BHEP deVERFAHREN ZUM REGELN DES ZUERST SCHMELZENDEN BEREICHES EINER PCM-ZELLE UND DAMIT HERGESTELLTE VORRICHTUNGENenMETHOD FOR CONTROLLING THE "FIRST-TO-MELT" REGION IN A PCM CELL AND DEVICES OBTAINED THEREOFfrPROCEDES POUR CONTROLER LA REGION "PREMIERE A FONDRE" DANS UNE CELLULE PCM ET DISPOSITIFS OBTENUS A L'AIDE DE CES PROCEDESEP-A- 1 202 285US-A1- 2005 128 798P. HARING BOLÍVAR, F. MERGET, D.-H. KIM, B. HADAM AND H. KURZ: "Lateral design for phase change random access memory cells with low-current consumption" EUROPEAN SYMPOSIUM ON PHASE CHANGE AND OVONIC SCIENCE SYMPOSIUM, [Online] September 2004 (2004-09), XP002398214 Retrieved from the Internet: URL:http://www.epcos.org/pdf_2004/19paper_ haringbolivar.pdf> cited in the applicationGOUX, Ludovicc/o Philips IP & Standards Cross Oak LaneRedhill Surrey RH1 5HAGBWOUTERS, Dirkc/o Philips IP & Standards Cross Oak LaneRedhill Surrey RH1 5HAGBLISONI, Judithc/o Philips IP & Standards Cross Oak LaneRedhill Surrey RH1 5HAGBGILLE, Thomasc/o Philips IP & Standards Cross Oak LaneRedhill Surrey RH1 5HAGBNXP B.V.07652150006015EPHigh Tech Campus 605656 AG EindhovenNLINTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW01021501006015EPKapeldreef 753001 LeuvenBEWilliamson, Paul Lewiset al09345101NXP Semiconductors UK Ltd. Intellectual Property Department Betchworth House Station RoadRedhill Surrey RH1 1DLGBATBEBGCHCYCZDEDKEEESFIFRGBGRHUIEISITLILTLULVMCNLPLPTROSESISKTRIB200605157520060518enWO20061233052006112320064720080213200807