......DE....FRGB....................................................................................JDIM360 Ver 2.40 (30 Jan 2013) - 2999001/01895595CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120131106W172deBibliographieenBibliographyfrBibliographieEP07021535.5199710172007112620080818enenen2758449619961018JP2013110620134520080305200810201305082013192012112620131106201345H01L 29/66 20060101AFI20120515BHEP H01L 29/739 20060101ALI20120515BHEP H01L 29/06 20060101ALI20120515BHEP deHalbleitervorrichtung und elektrische StromwandlervorrichtungenSemiconductor device and electric power conversion apparatus therewithfrDispositif semiconducteur et appareil de conversion d'énergie électrique correspondantEP-A- 0 735 591EP-A1- 0 615 292GB-A- 2 113 907GB-A- 2 243 952JP-A- 3 205 832US-A- 5 382 538PATENT ABSTRACTS OF JAPAN vol. 012, no. 420 (E-679), 8 November 1988 (1988-11-08) & JP 63 157477 A (NISSAN MOTOR CO LTD), 30 June 1988 (1988-06-30)97308267.0083750819971017Mori, Mutsuhiro1-124-6, KeyakidaiMito-shi, Ibaraki 310JPUchino, Yoshihiroc/o Hitachi, Ltd., Intellectual Property Group, 12th Floor, Marunouchi Center Building, 6-1, Marunouchi 1-chome, Chiyoda-kuTokyo 100-8220JPSakurai, Naoki7-6-302, Omika-cho 6-chome,Hitachi-shi, Ibaraki 319-12JPKobayashi, Hideo7-6-305, Omika-cho 6-chome,Hitachi-shi, Ibaraki 319-12JPSakano, JunichiYuuhou-ryo B216, 20-3, Ayukawa-cho 6-chome,Hitachi-shi, Ibaraki 316JPHitachi, Ltd.100828731RAJ/FP65069766-6, Marunouchi 1-chomeChiyoda-ku Tokyo 100-8280JPJohnson, Richard Alanet al100765636Mewburn Ellis LLP 33 Gutter LaneLondon EC2V 8ASGBDEFRGB20080604200823