METHOD FOR PASSIVATING A SUBSTRATE SURFACE

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EP 1 911 102 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	31.10.2012 Bulletin 2012/44

(45)	Mention of the grant of the patent:
	26.09.2012 Bulletin 2012/39

(21)	Application number: 06783861.5

(22)	Date of filing: 28.07.2006

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International Patent Classification (IPC):

H01L 31/18^(2006.01)
H01L 21/3105^(2006.01)
C23C 16/56^(2006.01)

H01L 21/316^(2006.01)
C23C 16/40^(2006.01)
C23C 16/513^(2006.01)

(86)	International application number:
	PCT/NL2006/000393

(87)	International publication number:
	WO 2007/013806 (01.02.2007 Gazette 2007/05)

(54)	METHOD FOR PASSIVATING A SUBSTRATE SURFACE VERFAHREN ZUM PASSIVIEREN EINER SUBSTRATOBERFLÄCHE PROCEDE DE PASSIVATION DE LA SURFACE D'UN SUBSTRAT

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

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Priority:

29.07.2005 NL 1029647

(43)	Date of publication of application:
	16.04.2008 Bulletin 2008/16

(73)	Proprietor: Roth & Rau B.V.
	5657 EB Eindhoven (NL)

(72)	Inventors:
	BIJKER, Martin Dinant NL-5709 KR Helmond (NL) HOEX, Bram NL-5014 KX Tilburg (NL) KESSELS, Wilhelmus Mathijs Marie NL-5045 ZZ Tilburg (NL) VAN DE SANDEN, Mauritius Cornelis Maria NL-5017 JH Tilburg (NL)

(74)	Representative: Hatzmann, Martin
	Vereenigde Johan de Wittlaan 7 2517 JR Den Haag 2517 JR Den Haag (NL)

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References cited: :

US-A- 4 253 881

US-A- 5 462 898

LEGUIJT C ET AL: "Low temperature surface passivation for silicon solar cells" SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 40, no. 4, 1 August 1996 (1996-08-01), pages 297-345, XP004008111 ISSN: 0927-0248
CHEN Z ET AL: "SILICON SURFACE AND BULK DEFECT PASSIVATION BY LOW TEMPERATURE PECVD OXIDES AND NITRIDES" WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY. WAIKOLOA, DEC. 5 - 9, 1994, NEW YORK, IEEE, US, vol. VOL. 2 CONF. 1, 5 December 1994 (1994-12-05), pages 1331-1334, XP000680085 ISBN: 0-7803-1460-3
VERMEULEN T ET AL: "Interaction between bulk and surface passivation mechanisms in thin film solar cells on defected silicon substrates" PROC. OF THE 25TH PVSC CONFERENCE, MAY 13-17 1996, WASHINGTON D.C., USA, IEEE, 13 May 1996 (1996-05-13), pages 653-656, XP010208236
ELGAMEL H E ET AL: "EFFICIENT COMBINATION OF SURFACE AND BULK PASSIVATION SCHEMES OF HIGH-EFFICIENCY MULTICRYSTALLINE SILICON SOLAR CELLS" JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 78, no. 5, 1 September 1995 (1995-09-01), pages 3457-3461, XP000541608 ISSN: 0021-8979
ROHATGI A ET AL: "COMPREHENSIVE STUDY OF RAPID, LOW-COST SILICON SURFACE PASSIVATION TECHNOLOGIES" IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 47, no. 5, May 2000 (2000-05), pages 987-993, XP000928620 ISSN: 0018-9383
NAGAYOSHI H ET AL: "The stability of SiNx:H/SiO2 double-layer passivation with Hydrogen-radical annealing" PROCEEDINGS OF THE EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, vol. 1, 30 June 1997 (1997-06-30), pages 739-742, XP002160392

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