(19) |
 |
|
(11) |
EP 1 916 223 A8 |
(12) |
CORRECTED EUROPEAN PATENT APPLICATION |
|
Note: Bibliography reflects the latest situation |
(15) |
Correction information: |
|
Corrected version no 1 (W1 A1) |
(48) |
Corrigendum issued on: |
|
23.07.2008 Bulletin 2008/30 |
(43) |
Date of publication: |
|
30.04.2008 Bulletin 2008/18 |
(22) |
Date of filing: 24.10.2007 |
|
(51) |
International Patent Classification (IPC):
|
|
(84) |
Designated Contracting States: |
|
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO
SE SI SK TR |
|
Designated Extension States: |
|
AL BA HR MK RS |
(30) |
Priority: |
24.10.2006 RU 2006137605 12.12.2006 KR 20060126401
|
(71) |
Applicants: |
|
- Samsung SDI Co., Ltd.
Suwon-si
Gyeonggi-do (KR)
- Ioffe Physico- Technical Institute of Russian
Academy of Sciences
Saint-Petersburg 194021 (RU)
|
|
(72) |
Inventors: |
|
- Kim, Yoon-Jin
Gyeonggi-do (KR)
- Zang, Dong-Sik
Gyeonggi-do (KR)
- Kim, Jae-Myung
Gyeonggi-do (KR)
- Moon, Hee-Sung
Gyeonggi-do (KR)
- Garifovich, Gabdullin Pavel
191126, St. Petersburg (RU)
- Nikolayevich, Davydov Sergey
194064, St. Petersburg (RU)
- Vasilyevich, Korablev Vadim
195274, St. Petersburg (RU)
- Efimovich, Kravchik Alexander
198259, St. Petersburg (RU)
- Vasilyevich, Sokolov Vasily
198096, St. Petersburg (RU)
- Alexandrovna, Kukushkina Yulia
195027, St. Petersburg (RU)
- Fedorovich, Tereshchenko Gennady
117218, Moscow (RU)
|
(74) |
Representative: Hengelhaupt, Jürgen et al |
|
Anwaltskanzlei
Gulde Hengelhaupt Ziebig & Schneider
Wallstrasse 58/59 10179 Berlin 10179 Berlin (DE) |
|
|
|
(54) |
Method of preparing a carbonaceous material for an emitter of an electron emission
device |
(57) Provided are carbide derived carbon materials prepared by thermochemically reacting
carbide compounds and a halogen containing gas and extracting all atoms of the carbide
compounds except carbon atoms, wherein the intensity ratios of the graphite G band
at 1590 cm
-1 to the disordered-induced D band at 1350 cm-1 are in the range of 0.3 through 5 when
the carbide derived carbon is analyzed using Raman peak analysis, wherein the BET
surface area of the carbide derived carbon is 1000 m
2/g or more, wherein a weak peak or wide single peak of the graphite (002) surface
is seen at 2θ = 25° when the carbide derived carbon is analyzed using X-ray diffractometry,
and wherein the electron diffraction pattern of the carbide derived carbon is the
halo pattern typical of amorphous carbon when the carbide derived carbon is analyzed
using electron microscopy.