(19)
(11) EP 1 918 938 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
01.07.2009 Bulletin 2009/27

(43) Date of publication A2:
07.05.2008 Bulletin 2008/19

(21) Application number: 07020259.3

(22) Date of filing: 17.10.2007
(51) International Patent Classification (IPC): 
G11C 19/18(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK RS

(30) Priority: 31.10.2006 KR 20060106665

(71) Applicant: Samsung Electronics Co., Ltd.
Seoul 442-742 (KR)

(72) Inventors:
  • Na, Byoung-Sun
    Hwaseong-si Gyeonggi-do (KR)
  • Ki, Dong-Hyeon
    Dobong-gu Seoul (KR)
  • Lee, Min-Cheol
    Dongjak-gu Seoul (KR)
  • Ahn, Soon-Il
    Cheonan-si Chungcheongnam-do (KR)

(74) Representative: Weitzel, Wolfgang 
Dr. Weitzel & Partner Patentanwälte Friedenstrasse 10
89522 Heidenheim
89522 Heidenheim (DE)

   


(54) Gate driving circuit, display apparatus having the same, and method thereof


(57) In a gate driving circuit and a display apparatus having the gate driving circuit, a pull-up transistor of a present stage among plural stages, which are connected one after another to each other and sequentially output a gate signal, pulls up a present gate signal output through an output terminal to a gate-on voltage. A buffer transistor is connected to a control terminal of the pull-up transistor to receive a previous output signal from a previous stage and to turn on the pull-up transistor. The buffer transistor has a chargeability that is about two times or greater than the chargeability of the pull-up transistor. Thus, the size of the pull-up transistor may be reduced, thereby preventing a malfunction of the gate driving circuit when the gate driving circuit is operated under conditions of high temperature or low temperature.







Search report