Tunnel magnetoresistance element

(19)

(11)

EP 1 925 946 A8

(12)	CORRECTED EUROPEAN PATENT APPLICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 A2)

(48)	Corrigendum issued on:
	09.06.2010 Bulletin 2010/23

(43)	Date of publication:
	28.05.2008 Bulletin 2008/22

(21)	Application number: 08102546.2

(22)	Date of filing: 24.05.2002

(51)

International Patent Classification (IPC):

G01R 33/09^(2006.01)

(84)	Designated Contracting States:
	DE FR GB

(30)

Priority:

31.05.2001 JP 2001163757

(62)	Application number of the earlier application in accordance with Art. 76 EPC:
	02730704.0 / 1391942

(71)	Applicants:
	National Institute of Advanced Industrial Science and Technology Tokyo 100-0013 (JP) Japan Science and Technology Agency Kawaguchi-shi, Saitama 332-0012 (JP)

(72)	Inventors:
	Nagahama, Taro c/o Nat. Institute of Advanced Industrial Science Tsukuba-shi, Ibaraki 305-0046 (JP) Yuasa, Shinji c/o Nat. Institute of Advanced Industrial Science Tsukuba-shi, Ibaraki 305-0046 (JP) Suzuki, Yoshishige c/o Nat. Institute of Advanced Industrial Science Tsukuba-shi Ibaraki 305-0046 (JP)

(74)	Representative: Hoarton, Lloyd Douglas Charles
	Forrester & Boehmert Pettenkoferstrasse 20-22 80336 Munich 80336 Munich (DE)


	Remarks:
	This application was filed on 12.03.2008 as a divisional application to the application mentioned under INID code 62.

(54)	Tunnel magnetoresistance element

(57) A tunnel magnetoresistive element having a structure in which a nonmagnetic single-crystal metal or nonmagnetic highly-oriented-polycrystalline interlayer lies between a barrier layer and a ferromagnetic electrode.