(19)
(11) EP 1 929 535 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
12.07.2017 Bulletin 2017/28

(45) Mention of the grant of the patent:
15.02.2017 Bulletin 2017/07

(21) Application number: 06796831.3

(22) Date of filing: 22.08.2006
(51) International Patent Classification (IPC): 
H01L 21/04(2006.01)
H01L 29/66(2006.01)
H01L 29/739(2006.01)
H01L 29/16(2006.01)
 H01L 21/316(2006.01)
H01L 29/51(2006.01)
H01L 29/78(2006.01)
(86) International application number:
PCT/JP2006/316795
(87) International publication number:
WO 2007/026622 (08.03.2007 Gazette 2007/10)

(54)

METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR DEVICE

VERFAHREN ZU HERSTELLUNG EINER SILIZIUMCARBID-HALBLEITERANORDNUNG

PROCÉDÉ DE FABRICATION D'UN DISPOSITIF DE SEMI-CONDUCTEURS EN CARBURE DE SILICIUM

(84) Designated Contracting States:
DE FR GB

(30) Priority: 29.08.2005 JP 2005247175

(43) Date of publication of application:
11.06.2008 Bulletin 2008/24

(73) Proprietors:
  • Nissan Motor Co., Ltd.
    Yokohama-shi, Kanagawa 221-0023 (JP)
  • ROHM CO., LTD.
    Kyoto-shi, Kyoto 615-8585 (JP)

(72) Inventors:
  • TANIMOTO, Satoshi
    Kanagawa 243-0192, (JP)
  • KAWAMOTO, Noriaki
    Kyoto 615-8585, (JP)
  • KITOU, Takayuki
    Kyoto 615-8585, (JP)
  • MIURA, Mineo
    Kyoto 615-8585, (JP)

(74) Representative: Grünecker Patent- und Rechtsanwälte PartG mbB 
Leopoldstraße 4
80802 München
80802 München (DE)


(56) References cited: : 
EP-A2- 0 697 716
US-A1- 2002 153 594
 WO-A-97/17730
   
  • TANIMOTO S ET AL: "HIGH-RELIABILITY ONO GATE DIELECTRIC FOR POWER MOSFETS" MATERIALS SCIENCE FORUM, AEDERMANNSFDORF, CH, vol. 483-485, 2005, pages 677-680, XP008071439 ISSN: 0255-5476
  • LIPKIN L ET AL: "CHALLENGES AND STATE-OF-THE-ART OF OXIDES ON SIC" MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, MATERIALS RESEARCH SOCIETY, PITTSBURG, PA, US, no. 640, 27 November 2000 (2000-11-27), pages H3101-H3110, XP008002243 ISSN: 0272-9172
  • JAMET PHILIPPE ET AL: "Effects of nitridation in gate oxides grown on 4H-SiC" JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 90, no. 10, 15 November 2001 (2001-11-15), pages 5058-5063, XP012053541 ISSN: 0021-8979
   
Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).