(19)
(11) EP 1 938 361 A2

(12)

(88) Date of publication A3:
18.05.2006

(43) Date of publication:
02.07.2008 Bulletin 2008/27

(21) Application number: 05784383.1

(22) Date of filing: 22.09.2005
(51) International Patent Classification (IPC): 
H01L 21/02(2006.01)
(86) International application number:
PCT/IB2005/053126
(87) International publication number:
WO 2006/035377 (06.04.2006 Gazette 2006/14)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

(30) Priority: 28.09.2004 US 613998 P
17.11.2004 US 628683 P

(71) Applicant: Koninklijke Philips Electronics N.V.
5621 BA Eindhoven (NL)

(72) Inventors:
  • SUN, Hongjiang
    Briarcliff Manor, NY 10510-8001 (US)
  • LAU, Kaman
    Briarcliff Manor, NY 10510-8001 (US)
  • MCDONALD, Peggie
    Briarcliff Manor, NY 10510-8001 (US)
  • BELL, Nancy, E.
    Briarcliff Manor, NY 10510-8001 (US)
  • NESHEIWAT, Tayel
    Briarcliff Manor, NY 10510-8001 (US)

(74) Representative: White, Andrew Gordon 
NXP Semiconductors IP Department Cross Oak Lane
GB-Redhill, Surrey RH1 5HA
GB-Redhill, Surrey RH1 5HA (GB)

   


(54) INTEGRATED SICR METAL THIN FILM RESISTORS FOR SIGE RF-BICMOS TECHNOLOGY