......DE....FRGB........NL..............FI..........................................................JJDIM360 Ver 1.28 (29 Oct 2014) - 2999001/01973386CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120160113W172deBibliographieenBibliographyfrBibliographieEP08004409.2200803102010051020100701enenen200707783320070323JP2016011320160220080924200839201511112015462015072220160113201602H05B 33/14 20060101AFI20150706BHEP H05B 33/20 20060101ALI20150706BHEP H05B 33/18 20060101ALI20150706BHEP C09K 11/06 20060101ALI20150706BHEP H01L 51/00 20060101ALI20150706BHEP H01L 27/32 20060101ALI20150706BHEP H01L 51/50 20060101ALI20150706BHEP deLICHTEMITTIERENDE VORRICHTUNG UND ELEKTRONISCHE VORRICHTUNGenLIGHT-EMITTING DEVICE AND ELECTRONIC DEVICEfrDISPOSITIF ÉLECTROLUMINESCENT ET DISPOSITIF ÉLECTRONIQUEEP-A- 1 670 083EP-A- 1 690 866US-A1- 2006 063 031US-A1- 2006 105 201"Highly efficient organic light emitting diodes (OLED) for displays and lighting" PROCEEDINGS OF SPIE, vol. 6192, 2006, XP040223532ZHOU X ET AL: "HIGH-EFFICIENCY ELECTROPHOSPHORESCENT ORGANIC LIGHT-EMITTING DIODES WITH DOUBLE LIGHT-EMITTING LAYERS" APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 81, no. 21, 18 November 2002 (2002-11-18), pages 4070-4072, XP001142713 ISSN: 0003-6951LEE YOUNG ET AL: "Fabrication of highly efficient and stable doped red organic light-emitting device using 2-methyl-9,10-di(2-napthyl)anthracene and tris(8-hydroxyquinolinato)aluminum as cohost materials" APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 89, no. 18, 2 November 2006 (2006-11-02), pages 183515-183515, XP012086790 ISSN: 0003-6951Nomura, Ryojic/o Semiconductor Energy Laboratory Co., Ltd. 398, HaseAtsugi-shi Kanagawa-ken 243-0036JPSatoshi, Seoc/o Semiconductor Energy Laboratory Co., Ltd. 398, HaseAtsugi-shi Kanagawa-ken 243-0036JPNobuharu, Ohsawac/o Semiconductor Energy Laboratory Co., Ltd. 398, HaseAtsugi-shi Kanagawa-ken 243-0036JPTsunenori, Suzukic/o Semiconductor Energy Laboratory Co., Ltd. 398, HaseAtsugi-shi Kanagawa-ken 243-0036JPSachiko, Kawakamic/o Semiconductor Energy Laboratory Co., Ltd. 398, HaseAtsugi-shi Kanagawa-ken 243-0036JPHarue, Osakac/o Semiconductor Energy Laboratory Co., Ltd. 398, HaseAtsugi-shi Kanagawa-ken 243-0036JPHideko, Inouec/o Semiconductor Energy Laboratory Co., Ltd. 398, HaseAtsugi-shi Kanagawa-ken 243-0036JPSemiconductor Energy Laboratory Co., Ltd.100218135EP57310W900kap398 HaseAtsugi-shi, Kanagawa-ken 243-0036JPGrünecker Patent- und Rechtsanwälte PartG mbB100060488Leopoldstraße 480802 MünchenDEDEFIFRGBNL20091202200949