METHOD OF FABRICATING A SEMICONDUCTOR ON INSULATOR DEVICE HAVING A FRONTSIDE SUBSTRATE CONTACT - Patent 1977445

(19)

(11)

EP 1 977 445 A1

(12)

(43)	Date of publication:
	08.10.2008 Bulletin 2008/41

(21)	Application number: 07700565.0

(22)	Date of filing: 10.01.2007

(51)

International Patent Classification (IPC):

H01L 21/74^(2006.01)

H01L 27/12^(2006.01)

(86)	International application number:
	PCT/IB2007/050077

(87)	International publication number:
	WO 2007/080545 (19.07.2007 Gazette 2007/29)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

(30)

Priority:

12.01.2006 EP 06100281

(71)	Applicant: NXP B.V.
	5656 AG Eindhoven (NL)

(72)	Inventor:
	ZIJLSTRA, Piebe, A. Redhill Surrey RH1 5HA (GB)

(74)	Representative: White, Andrew Gordon
	NXP Semiconductors Intellectual Property Department Cross Oak Lane Redhill Surrey RH1 5HA Redhill Surrey RH1 5HA (GB)

(54)	METHOD OF FABRICATING A SEMICONDUCTOR ON INSULATOR DEVICE HAVING A FRONTSIDE SUBSTRATE CONTACT