Method for manufacturing soi wafer

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EP 1 998 368 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	30.07.2014 Bulletin 2014/31

(45)	Mention of the grant of the patent:
	04.06.2014 Bulletin 2014/23

(21)	Application number: 08009380.0

(22)	Date of filing: 21.05.2008

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International Patent Classification (IPC):

H01L 21/762^(2006.01)

(54)	Method for manufacturing soi wafer Verfahren zur Herstellung eines SOI-Wafers Procédé de fabrication d'une tranche SOI

(84)	Designated Contracting States:
	BE DE FR

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Priority:

31.05.2007 JP 2007145624

(43)	Date of publication of application:
	03.12.2008 Bulletin 2008/49

(73)	Proprietor: Shin-Etsu Chemical Co., Ltd.
	Tokyo 100-0004 (JP)

(72)	Inventors:
	Akiyama, Shoji Annaka-shi Gunma-ken (JP) Kubota, Yoshihiro Annaka-shi Gunma-ken (JP) Ito, Atsuo Annaka-shi Gunma-ken (JP) Tanaka, Koichi Annaka-shi Gunma-ken (JP) Kawai, Makoto Annaka-shi Gunma-ken (JP) Tobisaka, Yuuji Annaka-shi Gunma-ken (JP)

(74)	Representative: Wibbelmann, Jobst
	Wuesthoff & Wuesthoff Patent- und Rechtsanwälte Schweigerstrasse 2 81541 München 81541 München (DE)

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References cited: :

EP-A1- 1 635 396
WO-A1-00/63954
WO-A2-03/005434

EP-A2- 1 926 139
WO-A1-2004/040476

Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention).