(19)
(11) EP 1 998 902 A2

(12)

(88) Date of publication A3:
06.03.2008

(43) Date of publication:
10.12.2008 Bulletin 2008/50

(21) Application number: 07757446.5

(22) Date of filing: 23.02.2007
(51) International Patent Classification (IPC): 
B05D 3/00(2006.01)
H01L 31/0336(2006.01)
H01L 31/032(2006.01)
(86) International application number:
PCT/US2007/062764
(87) International publication number:
WO 2007/101136 (07.09.2007 Gazette 2007/36)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

(30) Priority: 23.02.2006 US 361515
23.02.2006 US 361103
23.02.2006 US 361522
23.02.2006 US 361498
23.02.2006 US 361433
23.02.2006 US 361464
23.02.2006 US 361523
30.03.2006 US 395668
30.03.2006 US 396199
30.03.2006 US 395438
30.03.2006 US 394849

(71) Applicants:
  • Van Duren, Jeroen K.J.
    Menlo Park, CA 94025 (US)
  • Leidholm, Craig R.
    Sunnyvale, CA 94086 (US)

(72) Inventor:
  • ROBINSON, Matthew, R.
    Palo Alto, CA 94303 (US)

(74) Representative: Boyce, Conor et al
F. R. Kelly & Co. 27 Clyde Road Ballsbridge
Dublin 4
Dublin 4 (IE)

   


(54) HIGH-THROUGHPUT FORMATION OF SEMICONDUCTOR LAYER BY USE OF CHALCOGEN AND INTER-METALLIC MATERIAL