METHOD OF MANUFACTURING A DIELECTRIC PORCELAIN

Description

FIELD OF THE INVENTION

[0001] The present invention relates to a method of manufacturing a dielectric porcelain, for example, a barium titanate-based dielectric porcelain composition, which is suitably used for manufacturing of a ceramic multilayer substrate or laminated piezoelectric element by use of low temperature co-fired ceramic (LTCC).

BACKGROUND ART

[0002] In recent years, it is designed to attain miniaturization and density growth of electronic equipment by integrating a passive part such as a capacitor or inductor which was conventionally mounted on a ceramic substrate surface into a ceramic multilayer substrate. Such a ceramic multilayer substrate is produced by forming a green sheet from a slurry of a dielectric porcelain composition and an organic solvent by doctor blade method followed by drying, printing a wiring conductor on the top surface of the sheet, forming a laminated body by laminating such green sheets of the same dielectric porcelain composition as described above, and co-firing it.

[0003] Such a ceramic multilayer substrate uses Ag or Cu with small specific resistance as the wiring conductor for performing high-performance signal processing at high speed. Therefore, various ceramic materials which can be co-fired with Ag and Cu at temperatures lower than 962°C that is the melting point of Ag and 1084°C that is the melting point of Cu are developed.

[0004] In the above-mentioned ceramic multilayer substrate, a one having a dielectric constant of 10 or less is suitably used for suppressing stray capacitance or coupling capacitance between wires. While, when a capacitor is formed within the ceramic multilayer substrate, it is desirable for the ceramics constituting the capacitor to have a high dielectric constant.

[0005] The barium titanate-based dielectric porcelain composition generally has a high dielectric constant, and can form a high-capacity capacitor within the ceramic multilayer substrate. However, since it needs a sintering temperature as high as 1150 to 1200°C or higher, Ag and Cu cannot be used as the wiring conductor to be co-fired. Therefore, it is necessary for the barium titanate-based dielectric porcelain composition to be sinterable at a temperature of 1000°C or lower while having practical dielectric constant and dielectric loss.

[0006] On the other hand, in use as a piezoelectric element, development of a piezoelectric material having a lead-free composition is demanded since conventional PZT contains lead that is an environmental load substance, and the barium titanate-based porcelain composition is attracting attention as a candidate thereof.

[0007] Further, in use as a laminated piezoelectric element through molding of sheets by the doctor blade method, it is important to develop a low-temperature sintering technique capable of suppressing use of expensive Pt or Pd. However, lead-free piezoelectric porcelain compositions disclosed in the past need firing temperatures of 1000°C or higher.

[0008] Various prior literatures are known for the barium titanate-based dielectric porcelain composition. In Japanese Patent Application Laid-Open No. Hei 5-120915A, lead is added to allow low-temperature firing.

[0009] Japanese Patent Application Laid-Open No. Sho 54-53300A describes addition of copper oxide and bismuth oxide.

[0010] Japanese Patent Application Laid-Open No. Sho 61-251561A describes addition of copper oxide.

[0011] Further, in Japanese Patent Application Later-Open Nos. 2001-143955A, 2000-226255A, 2000-264724A and 2003-335575A, barium titanate-based dielectric porcelain compositions are disclosed.

[0012] JP 11 278926 describes a dielectric porcelain having main crystalline particles comprising a perouskite type oxide compound containing at least Ba and Ti as metal elements and a grain boundary phase containing Si, Zn, Bi and Ti. Bi of the grain boundary phase exists as crystalline particles comprising a oxide compound containing Bi and Ti.

[0013] Lead-free piezoelectric porcelain compositions are disclosed, for example, in Japanese Patent Application Laid-Open Nos. Hei 11-228226A, Hei 11-228228A, and Hei 10-297969A, Japanese Patent No. 2942535A, and Japanese Patent Application Laid-Open Nos. Hei 11-29356A, 2002-160967A and 2002-265262A.

SUMMARY OF THE INVENTION

[0014] However, the dielectric porcelain compositions according to the related art are not desirable from the viewpoint of the environmental load of lead, since lead is contained an essential component. Otherwise, even if low-temperature sintering is possible, the resulting dielectric porcelain composition is low in electric characteristic, for example, with a dielectric constant of 1000 or less and an increasing trend of dielectric loss, and thus insufficient for practical use. A lead-free piezoelectric porcelain material which can be compactly sintered at a low temperature of 1000°C or lower has not been provided yet.

[0015] An object of the present invention is thus to provide a new barium titanate-based dielectric porcelain composition, which can be sintered at a temperature of 1000°C or lower.

[0016] The present invention provides a method of manufacturing a dielectric porcelain as set out in claim 1.

[0017] The present invention also relates to the use of the dielectric porcelain manufactured by this method as an electronic part.

[0018] According to the present invention, a barium titanate-based dielectric porcelain composition which can be sintered at a temperature of 1000°C or lower can be provided. This dielectric porcelain composition is a breakthrough composition without needing not only inclusion of a component such that it excessively loads on the environment such as lead, but also addition of a glass component for reducing the sintering temperature.

[0019] By using the dielectric porcelain composition obtained by the method of the present invention, a conductive film composed of a metal having a relatively low baking temperature such as silver can be co-fired with the dielectric porcelain composition, whereby various electronic parts which were conventionally difficult to manufacture can be provided. To this extent, the present invention has an extremely great industrial advantage.

BRIEF DESCRIPTION OF THE DRAWING

[0020] Fig. 1 is a schematic sectional view of an example of an electronic part to which the dielectric porcelain manufactured by the method of the present invention may be applied.

BEST MODES FOR CARRYING OUT THE INVENTION

[0021] It becomes increasingly important to integrate a high-capacity passive part into an electronic part, for example, in a LTCC material using Ag conductor. The prevent invention enables industrial manufacturing of such an electronic part to put into a new product into the market.

[0022] Further, the present invention is advantageously applicable to a purpose needing piezoelectric porcelain such as a laminated piezoelectric actuator since lead-free, low temperature-sinterable piezoelectric porcelain can be provided by the present invention.

[0023] The dielectric constant of the dielectric porcelain manufactured by the method of the present invention is not particularly limited. However, in a purpose needing a high dielectric constant such as a dielectric capacitor, it is preferred to set the dielectric constant to, for example, 1000 or more.

[0024] The barium titanate-based dielectric material referred to herein means a dielectric material mainly composed of barium titanate. Concretely, it can be, in the raw material stage, a calcined body of barium titanate or a mixture of titanium oxide and barium oxide which produce barium titanate after sintering. When the whole barium titanate-based dielectric material is 100 mol%, 100 mol% may be entirely composed of barium titanate. Otherwise, 30 mol% or less of the barium portion of the dielectric material can be substituted by strontium, calcium or magnesium. Further, 30 mol% or less of the titanium portion of the dielectric material can be substituted by zirconium.

[0025] In the main component 100 mol%, 0 to 30 mol% can be substituted by at least one compound selected from the group consisting of SrTiO₃, CaTiO₃, MgTiO₃ and BaZrO₃.

[0026] In the present invention, a dielectric porcelain is obtained by sintering a ceramic composition as set out in claim 1.

[0027] The composite oxides in (b) and (c) can be produced by calcination. As the composition oxide, CuBi₂O₄ can be given as an example.

[0028] The total amount of Bi₂O₃ and CuO is controlled to 4 to 10 parts by weight or more, whereby the dielectric constant of porcelain when fired at 1000°C or lower can be improved, for example, to 1000 or more. The dielectric loss can be also reduced. From the viewpoint of improving the dielectric constant, the total amount of the sub-components is controlled preferably to 4.5 parts by weight or more, more preferably to 5.0 parts by weight or more.

[0029] The dielectric constant of the porcelain is improved also by controlling the total amount of the sub-components to 10.0 parts by weight or less. From this point of view, the total amount of the sub-components is controlled preferably to 9.0 parts by weight or less.

[0030] The molar ratio of the total amount of CuO to Bi₂O₃ (the total amount of CuO: Bi₂O₃) is set within the range of 1.5:1.0 to 1.0:5.0. The range is further preferably 1.5:1.0 to 1.0:2.0. According to this, the dielectric constant of porcelain can be further improved with further reduction in dielectric loss, and low-temperature firing at 1000°C or lower can be performed.

[0031] The composition is sintered at a temperature of 900 to 1000°C. Sintering is difficult at a temperature below 900°C. By setting the sintering temperature to 1000°C or lower, extensive development of the purposes as described above can be attained with a great industrial advantage. The sintering temperature is further preferably 980°C or lower. When Ag is used as the conductor, it is preferred to set the sintering temperature to 950°C or lower.

[0032] When the porcelain composition manufactured by the method of the present invention is used as a capacitor, a means for improving dielectric characteristic by composition control of high-temperature firing BaTiO₃ is also applicable thereto. For example, by firing at 1000°C or lower depending on the kind of additives, X7R characteristic of EIA standard and B characteristic of JIS standard can be satisfied with a dielectric constant at room temperature ranging from 1000 to 4000.

[0033] In a preferred embodiment, one or more compounds selected from the group consisting of ZnO, Nb₂O₅ and MnO are added to the ceramic composition in a total amount of 0.1 part by weight or more and 1.5 parts by weight or less. According to this, the X7R characteristic of EIA standard or the B characteristic of JIS standard can be satisfied. These characteristics, which are standards related to the electrostatic capacitance of the dielectric porcelain composition and consequently temperature characteristic of electronic part performance, are advantageous for extensive development as electronic parts.

[0034] From the point of improving the temperature characteristic of electrostatic capacitance of the dielectric porcelain manufactured by the method of the invention, the total added amount of the one or more compounds selected from the group consisting of ZnO, Nb₂O₅ and MnO further preferably may be 0.2 part by weight or more, or, 1.2 parts by weight or less.

[0035] The dielectric porcelain obtained by the method of the present invention can have a dielectric constant at 25°C of 1000 or more. The upper limit thereof is not particularly limited, but is generally apt to be 4000 or less. The dielectric loss at 25°C can be reduced to 5% or less.

[0036] It is preferred that the ceramic composition of the present invention substantially contains no oxide of Pb, except traces of unavoidable impurities.

[0037] The ceramic composition includes 4 to 10 parts by weight in total of CuO and Bi₂O₃ as the sub-components. According to this, development of piezoelectricity is facilitated in the dielectric porcelain obtained by the present invention.

[0038] When the dielectric porcelain obtained by the present invention is used as piezoelectric porcelain, it is preferred that the piezoelectric constant is 10 or more although it is not particularly limited. In such a use, the dielectric constant does not have to be high as in the use as dielectric capacitor.

[0039] From the point of the piezoelectricity, it is preferred to control the amount of ZnO to 0.1 part by weight or less. From this point of view, it is further preferred that ZnO is not substantially contained (in this case, also, unavoidable impurities are allowable).

[0040] It is preferred that MgO is not substantially contained (in this case, also unavoidable impurities are allowable).

[0041] In a preferred embodiment, MnO is added to the ceramic composition in an amount of 0.02 part by weight or more and 0.2 part by weight or less. According to this, the piezoelectricity of the dielectric porcelain obtained by the method of the present invention can be further enhanced. From the point of the improvement in piezoelectricity, the amount of MnO is controlled preferably to 0.05 part by weight or more. From the point of the improvement in piezoelectricity, the amount of MnO is controlled preferably to 0.15 part by weight or less, further preferably to 0.1 part by weight or less.

[0042] In a preferred embodiment, lithium is added to the ceramic composition in an amount of 0.05 part by weight or more and 0.3 part by weight or less in terms of Li₂O₃. According to this, the piezoelectricity of the dielectric porcelain obtained by the present invention can be further enhanced. From the point of the improvement in piezoelectricity, the amount of Li₂CO₃ is controlled preferably to 0.2 part by weight or less, further preferably to 0.15 part by weight or less.

[0043] In a preferred embodiment, the added amount (total value) of MnO amount and Li₂CO₃-converted amount to the ceramic composition is 0.05 part by weight or more and 0.6 part by weight or less. According to this, the piezoelectricity of the dielectric porcelain obtained can be further enhanced. From the point of the improvement in piezoelectricity, the total amount of the both is controlled preferably to 0.1 part by weight or more. From the point of the improvement in piezoelectricity, the total added amount of the both is controlled preferably to 0.3 part by weight or less, further preferably to 0.2 part by weight.

[0044] In another embodiment, the present invention includes the use of a dielectric porcelain, obtained by the above method, as an electronic part. Particularly preferably, the electronic part comprises a low-temperature sinterable conductive film composed ofAg, Cu or Ag-Pd alloy.

[0045] The ceramic composition substantially contains no glass component.

[0046] As the raw material of each metal component, for example, oxide, nitrate, carbonate and sulfate of each metal can be used.

[0047] In the present invention, the ratio of each metal oxide component is an equivalent for each metal oxide in the raw material mixture. The equivalent for each metal oxide in the raw material mixture is determined by the mixing ratio of each metal raw material. In the present invention, the mixing ratio of each metal raw material is weighed by a precision scale, and the equivalent is calculated based on the weighed value.

[0048] The electronic part is not particularly limited, and examples thereof include a laminated ceramic capacitor, a multilayer wiring board, a dielectric composite module, and a laminated piezoelectric actuator.

[0049] A dielectric porcelain obtained by the method of the present invention can be integrated with the other low-dielectric constant dielectric porcelain composition having a dielectric constant ε of 150 or less. As the composition system of low-temperature fired porcelain constituting the other dielectric layer, the followings are particularly preferred:

        BaO-TiO₂-ZnO

        BaO-TiO₂-Bi₂O₃-Nd₂O₃

        BaO-TiO₂-Bi₂O₃-La₂O₃-Sm₂O₃

        BaO-Al₂O₃-SiO₂-ZnO.

[0050] When a dielectric porcelain is produced according to the present invention, preferably, each metal component raw material is mixed at a predetermined ratio, the resulting mixed powder is calcined at 900 to 1200°C, and the calcined body is pulverized to give ceramic powder. The ceramic powder is preferably granulated while mixing with an appropriate binder such as polyvinyl alcohol, and the granulated powder is molded. The resulting molded body is fired at 900 to 1000°C to thereby obtain a dielectric porcelain composition.

[0051] Fig. 1 shows an example of an electronic part to which a dielectric porcelain obtained by the present invention can be applied. The part shown in the drawing is a multilayer wiring board with built-in capacitor. An integrated circuit 1 is mounted on a multilayer wiring board 10 through an external electrode 3 and a solder bump 2. The multilayer wiring board 10 is composed of, for example, a porcelain 4 with low dielectric constant as described above and porcelains 5 and 6 with high dielectric constant of the dielectric porcelain composition of the present invention. According to an appropriate design, inner layer electrodes 7 and via conductors 8 are vertically and horizontally formed to constitute multilayer wiring. In this part 10, each of C1, C2 and C3 forms a capacitor, which can be used for each predetermined purpose.

EXAMPLES and Comparative Examples

(Experiment A)

[0052] BaCO3 and TiO₂ were weighted, wet-mixed while adding pure water thereto by a ball mill, and dried. The resulting dried product was powderized, calcined at 1100°C for 2 hours in the atmosphere, and wet-pulverized so as to have an average particle size of about 1.0 µm to thereby obtain a barium titanate calcined powder.

[0053] Each powder of Bi₂O₃, CuO, ZnO and MgO was weighed as needed so as to have each composition shown in Tables 1 and 2, and added to the barium titanate powder. The mixture was wet-mixed by a ball mill for 15 hours, dried, and granulated while adding a proper amount of polyvinyl alcohol, and the resulting granulated product was molded at a pressure of about 1 ton/cm² to thereby obtain a disk-like molded body having a diameter of 12 mm and a thickness of 1.0 mm. The resulting molded body was mainly fired in the atmosphere at each temperature shown in Tables 1 and 2 to thereby prepare a dielectric porcelain sample of each example.

[0054] The bulk density, dielectric constant (ε), and dielectric loss of each dielectric porcelain sample were measured. The results are summarized in Tables 1 and 2. The measurement methods are as follows.

(Bulk Density)

[0055] Archimedes method

(Dielectric Constant) and (Dielectric Loss)

[0056] LCR Meter (1 kHz, 1 V)

Table 1

Sample No.	Main Component	First sub-component (weight parts)				Sub-Components Total	Bi2O3 : MeO	Sintering Temperature	Bulk density	Dielectric Constant ε	Dielectric Constant
	BaTiO3	Bi2O3	CuO	ZnO	MgO	(weight Parts)	Molar Ratio	°C	(g/cm3)		(%)
A1*	100	2.6	0.4			3.0	1 : 1	900	5.50	680	7.1
A2*	100	2.6	0.4			3.0	1 : 1	950	5.56	869	6.8
A3*	100	2.6	0.4			3.0	1 : 1	1000	5.60	921	6.1
A4	100	3.4	0.6			4.0	1 : 1	900	5.63	1032	3.6
A5	100	3.4	0.6			4.0	1 : 1	950	5.86	1058	3.2
A6	100	3.4	0.6			4.0	1 : 1	1000	5.99	1185	3.8
A7*	100	5.1	0.9			6.0	1 : 1	850	Not sintered
A8	100	5.1	0.9			6.0	1 : 1	900	5.85	1121	2.9
A9	100	5.1	0.9			6.0	1 : 1	950	5.90	1344	3.1
A10	100	5.1	0.9			6.0	1 : 1	1000	5.92	1405	3.9
A11*	100	5.1	0.9			6.0	1 : 1	1050	5.96	1931	6.2
A12	100	8.5	1.5			10.0	1 : 1	900	5.93	1145	3.4

* Comparative Example

Table 2

Sample No.	Main Component	First sub-component (weight parts)				First Sub-component Total	Bi2O3 : MeO	Sintering Temperature	Bulk Density	Dielectric Constant ε	Dielectric Loss
	BaTiO3	Bi2O3	CuO	ZnO	MgO	(weight parts)	Molar ratio	(°C)	(g/cm3)		(%)
A13	100	8.5	1.5			10.0	1 : 1	950	5.95	1082	2.9
A14	100	8.5	1.5			10.0	1 : 1	1000	5.91	1016	3.6
A15*	100	10.2	1.8			12.0	1 : 1	900	5.88	931	7.6
A16*	100	4.3		0.7		5.0	1 : 1	950	5.56	1135	1.9
A17*	100	4.3		0.7		5.0	1 : 1	1000	5.73	1451	2.6
A18*	100	8.5		1.5		10.0	1 : 1	950	5.72	1325	3.6
A19*	100	8.5		1.5		10.0	1 : 1	1000	5.83	1214	3.2
A20*	100	4.6			0.4	5.0	1 : 1	950	5.46	1089	2.1
A21*	100	4.6			0.4	5.0	1 . 1	1000	5.63	1023	3.8
A22*	100	9.2			0.8	10.0	1 : 1	950	5.59	1136	4.9
A23*	100	9.2			0.8	10.0	1 : 1	1000	5.66	1212	4.2

* Comparative Example

[0057] Samples A1, A2 and A3 in which the total amount of first sub-components was set to 3.0 parts by weight were low in dielectric constant and high in dielectric loss. In Samples A4, A5 and A6 in which the total amount of the first sub-components was set to 4.0 parts by weight, the dielectric loss was reduced with high dielectric constant. Sample A7 was not sintered although the sintering temperature was lowered to 850°C. Samples A8 to A10 in which the total amount of the first sub-components was set to 6.0 parts by weight, the dielectric constant was further increased with low dielectric loss. In Sample A11 in which the firing temperature was set to 1050°C, the dielectric constant was further improved. However, the dielectric loss was slightly reduced. Samples A12, A13 and A14 in which the total amount of first sub-components was set to 10.0 parts by weight were high in dielectric constant and low in dielectric loss.

[0058] In Sample A15 in which the total amount of first sub-components was set to 12.0 parts by weight, the dielectric constant was reduced, and the dielectric loss was also deteriorated. Samples A16 to A19 in which ZnO was used instead of CuO were high in dielectric constant and low in dielectric loss. In Samples A20 to A23 in which MgO was used instead of CuO, the dielectric loss could be reduced with high dielectric constant. However, CuO and ZuO are seemed to be more preferred.

(Experiment B)

[0059] Porcelain of each composition shown in Table 3 was produced in the same manner as in Experiment A, and evaluated for each characteristic shown in Table 3. The total amount of the first sub-components and the composition ratio of bismuth oxide to the other oxide MeO in the first sub-components were varied as shown in Table 3.

Table 3

Sample No.	Main Component	First sub-components (weight parts)				First Sub-components Total	Bi2O3: MeO	Sintering Temperature	Bulk Density	Dielectric Constant ε	Dielectric Loss
	BaTiO3	Bi2O3	CuO	ZnO	MgO	(weight parts)	Molar ratio	(°C)	(g/cm3)		(%)
B1	100	4.5	1.5			6.0	1.0:2.0	920	5.30	778	10.1
B2	100	4.8	1.2			6.0	1.0:1.5	920	5.77	1036	4.9
B3	100	5.5	0.5			6.0	2.0:1.0	920	5.84	1164	4.2
B4	100	5.8	0.2			6.0	5.0:1.0	920	5.48	1032	4.4
B5	100	5.9	0.1			6.0	7.0:1.0	920	5.21	430	12.1
B6*	100	6.0				6.0	-	980	Not sintered
B7*	100	4.4		1.6		6.0	1.0:2.0	980	Not sintered
B8*	100	4.8		1.2		6.0	1.0:1.5	960	5.57	1221	3.6
B9*	100	5.1		0.9		6.0	2.0:1.0	960	5.81	1542	3.9
B10*	100	5.5		0.5		6.0	5.0:1.0	960	5.51	1158	4.1
B11*	100	5.8		0.2		6.0	7.0:1.0	980	Not sintered
B12*	100	5.1			0.9	6.0	1.0:2.0	980	Not sintered
B13*	100	5.3			0.7	6.0	1.0:1.5	980	5.41	1431	2.2
B14*	100	5.8			0.2	6.0	2.0:1.0	980	5.77	1551	2.8
B15*	100	5.9			0.1	6.0	5.0:1.0	980	5.38	1031	3.8

* Comparative Example

[0060] In Samples B 2 to B5, B8 to B10, and B 13 to B15 in which the molar ratio of the total amount (MeO) of at least one compound selected from the group consisting of CuO, ZnO and MgO to Bi₂O₃ ranges from 1.5:1.0 to 1.0:5.0, each characteristic was particularly excellent.

(Experiment C)

[0061] Porcelain of each composition show in Tables 4 and 5 was produced in the same manner as in Experiment A, and evaluated for each characteristic shown in Table 4. As the main component, a part of BaTiO₃ was substituted by other components shown in Tables 4 and 5.

Table 4

Sample No.	Main components (molar %)					First Sub-components (weight parts)		First Subcomponents Total	Sintering Temperature	Bulk Density	Dielectric Constant ε	Dielectric Loss
	BaTiO3	SrTiO3	CaTiO3	MgTiO3	BaZrO3	Bi2O3	CuO	(weight parts)	(°C)	(g/cm3)		(%)
C1	90	10				4.3	0.7	5.0	980	5.81	2263	3.1
C2	80	10				5.1	0.9	6.0	940	5.89	2152	3.3
C3	70	20				4.3	0.7	5.0	980	5.85	2981	3.3
C4	90	20				5.1	0.9	6.0	940	5.87	2889	2.9
C5	80	30				4.3	0.7	5.0	980	5.87	3851	3.4
C6	70	30				5.1	0.9	6.0	940	5.81	3621	3.9
C7	99		1			4.3	0.7	5.0	980	5.79	1522	1.3
C8	99		1			5.1	0.9	6.0	940	5.77	1515	1.4
C9	98		2			4.3	0.7	5.0	980	5.65	1321	1.5
C10	98		2			5.1	0.9	6.0	940	5.71	1301	1.3
C11	95		5			4.3	0.7	5.0	980	5.88	1288	1.3
C12	95		5			5.1	0.9	6.0	940	5.99	1311	1.2

Table 5

Sample No.	Main components (molar %)					First Subcomponents (weight parts)		First Sub-Components Total	Sintering Temperature	Bulk Density	Dielectric Constant ε	Dielectric loss
	BaTiO3	SrTiO3	CaTiO3	MgTiO3	BaZrO3	Bi2O3	CuO	(weight parts)	(°C)	(g/cm3)		(%)
C13	99			1		4.3	0.7	5.0	980	5.87	1941	2.0
C14	99			1		5.1	0.9	6.0	940	5.98	1534	1.9
C15	98			2		4.3	0.7	5.0	980	5.86	2037	1.9
C16	98			2		5.1	0.9	6.0	940	5.85	1621	1.8
C17	95			5		4.3	0.7	5.0	980	5.71	2213	2.1
C18	95			5		5.1	0.9	6.0	940	5.73	1910	2.2
C19	90				10	4.3	0.7	5.0	980	5.41	1856	3.6
C20	90				10	5.1	0.9	6.0	940	5.89	1648	4.1
C21	80				20	4.3	0.7	5.0	980	5.92	2431	4.6
C22	80				20	5.1	0.9	6.0	940	5.77	2251	3.9
C23	70				30	4.3	0.7	5.0	980	5.61	3982	4.4
C24	70				30	5.1	0.9	6.0	940	5.66	3880	3.9

[0062] Consequently, in also Samples C1 to C24, low-temperature firing could be performed by adding predetermined amounts of the first sub-components according to the present invention, and the dielectric constant of the porcelain could be increased to reduce the dielectric loss.

(Experiment D)

[0063] Porcelain of each composition shown in Table 6 was produced in the same manner as in Experiment A, and evaluated for each characteristic shown in Tables 6 and 7. Second sub-components were added in amounts shown in Table 6 while fixing the total amount of the first sub-components to 5.0 or 6.0 parts by weight.

[0064] The electrostatic capacitance of the porcelains was measured as follows. The difference between maximum value and minimum value of the electrostatic capacitance in each designated temperature range is shown in Table 7. "X7R" and "B" represent the degrees of satisfaction for X7R characteristic of EIA standard and B characteristic of JIS standard, respectively, with "○" showing that the standards are satisfied and "×" showing that the standards are unsatisfied.

Table 6

No.	Main Component	First Sub-Components (weight Parts)			First Sub-Component Total	Second Sub-Components (weight Parts)			Second Sub-components total	Sintering Temperature	Bulk Density	Dielectric Constant ε	Dielectric Loss
	BaTiO3	Bi2O3	CuO		Weight Parts	ZnO	Nb2O5	MnO	Weight Parts	°C	g/cm3		(%)
D1	100	4.3	0.7		5.0	0.2			0.2	960	5.55	1581	1.3
D2	100	4.3	0.7		5.0	0.5			0.5	960	5.89	1989	1.1
D3	100	4.3	0.7		5.0	0.8			0.8	960	5.85	1972	1.3
D4	100	4.3	0.7		5.0	1			1.0	960	5.87	1921	0.9
D5	100	4.3	0.7		5.0	1.2			1.2	960	6.79	1968	1
D6	100	4.3	0.7		5.0		0.2		0.2	960	5.68	1522	2.8
D7	100	4.3	0.7		5.0	0.4		0.1	0.5	960	5.96	1301	0.7
D8	100	4.3	0.7		5.0	0.2		0.3	0.5	960	5.88	1288	0.6
D9	100	5.1	0.9		6.0	0.2			0.2	930	5.99	2521	0.7
D10	100	5.1	0.9		6.0	0.5			0.5	930	5.87	2640	0.9
D11	100	5.1	0.9		6.0	0.8			0.8	930	5.98	2621	1
D12	100	5.1	0.9		6.0	1			1.0	930	5.86	2699	0.8
D13	100	5.1	0.9		6.0	1.2			1.2	930	5.85	2683	0.7
D14	100	5.1	0.9		6.0		0.2		0.2	930	5.73	1836	2.9
D15	100	5.1	0.9		6.0		0.5		0.5	930	5.41	1856	2.1
D16	100	5.1	0.9		6.0	0.2		0.3	0.5	930	5.87	1698	0.5

Table 7

Sample No.	Temperature-dependency of electrostatic capacity
	ΔC (-55 °C/25 °C)	ΔC (125 °C/25 °C)	X7R	ΔC (-25 °C/20 °C)	ΔC (85 °C/20 °C)	B
D1	-22.0	+0.02	×	-9.3	+6.2	○
D2	-14.3	-6.8	○	-8.5	-1.3	○
D3	-13.9	-7.9	○	-8.2	-2.8	○
D4	-13.3	-12.5	○	-8.4	-4.5	○
D5	-14.1	-14.3	○	-7.7	-5.8	○
D6	-14.7	+10.8	○	-8.9	+9.9	○
D7	-14.3	+20.6	×	-6.9	+9.5	○
D8	-14.4	+14.3	○	-7.1	+5.1	○
D9	-20.8	-2.8	×	-7.5	+0.1	○
D10	-13.2	-4.1	○	-3.9	-4.8	○
D11	-12.6	-10.9	○	-0.2	-4.4	○
D12	-9.6	-13.9	○	+0.6	-5.8	○
D13	-8.3	-14.8	○	+0.9	-8.7	○
D14	-20.9	+25.2	×	-8.6	+9.7	○
D15	-13.2	+1.8	○	-7.2	+7.9	○
D16	-13.8	+13.1	○	-8:9	+5.9	○

[0065] In each of Samples D1 to D16, low-temperature firing could be performed, and the dielectric loss of porcelain could be remarkably reduced with high dielectric constant. Further, it was found that the temperature change rate of electrostatic capacitance of the porcelain can be reduced to satisfy the X7R characteristic of EIA standard and the B characteristic of JIS standard.

(Experiment E-A)

[0066] Porcelain of each composition shown in Table 8 was produced in the same manner as in Experiment A. The piezoelectricity measuring sample was formed to have a dimension after sintering of 12 mm (length) × 3 mm (width) × 1 mm (thickness). Measurement of bulk density, dielectric constant (ε) and dielectric loss was performed to the porcelain of each example. The results are summarized in Table 8. Further, whether the porcelain could be polarized or not was also examined. The poling was performed by applying an electric field of 2 to 2.5 kV/mm in silicone oil of 70°C for 15 minutes.

Table 8

	Main component	sub-component (weight parts)		total sub - components	Bi2O3: CuO	sintering temperature	Density	Dielectric Constant ε	Dielectric Loss tanδ	Polarization
	BaTiO3	Bi2O3	CuO	Weight parts	Molar Ratio	°C	(g/cm3)		(%)
E1*	100	2.6	0.4	3.0	1 : 1	900	5.50	680	7.1	×
E2*	100	2.6	0.4	3.0	1 : 1	950	5.56	869	6.8	×
E3	100	3.4	0.6	4.0	1 : 1	900	5.63	1032	3.6	○
E4	100	3.4	0.6	4.0	1 : 1	950	5.86	1058	3.2	×
E5*	100	5.1	0.9	6.0	1 : 1	850	Not sintered			×
E6	100	5.1	0.9	6.0	1 : 1	900	5.85	1121	2.9	○
E7	100	5.1	0.9	6.0	1 : 1	950	5.90	1344	3.1	○
E8	100	5.1	0.9	6.0	1 : 1	1000	5.92	1405	3.9	○
E9*	100	5.1	0.9	6.0	1 : 1	1050	5.96	1931	6.2	×
E10	100	8.5	1.5	10.0	1 : 1	950	5.95	1082	2.9	○
E11*	100	10.2	1.8	12.0	1 : 1	900	5.88	984	7.6	×

* Comparative Example

[0067] Sample E5 was not sintered because the firing temperature was as low as 850°C. Sample E9 was found not to be polable although the dielectric constant was increased with a firing temperature of 1050°C. Accordingly, polable compact dielectric porcelain with high dielectric constant that is a sintered body of barium titanate-based porcelain composition in a low-temperature area of 1000°C or lower is provided first by the present invention.

(Experiment E-B)

[0068] Dielectric porcelain of each composition shown in Tables 9, 10 and 11 was produced in the same manner as in Experiment A. In Experiments E12 to E29, MnO was added in each amount shown in Tables 9 and 10. In Experiments E 30 to E41, Li₂CO₃ was added in each amount shown in Table 11. Each characteristic was measured as follows.

(Density, Dielectric Constant, Dielectric Loss)

[0069] According to Experiment A (Electromechanical Coupling Factor k₃₁, Piezoelectric Constant d₃₁, Mechanical Quality Factor Qm)

Resonance-antiresonance method

[0070] 

Table 9

	Main Component	Sub- Component (weight Parts)		Bi2O3 : CuO	MnO Weight Parts	Sintering Temperature	Density	Dielectric Constant ε	Dielectric Loss tanδ	Electromechanical Coupling Factor (k31)	Piezoelectric Constant (d31)	Mechanical quality Constant (Qm)
	BaTiO3	Bi2O3	CuO	Molar Ratio		° C	(g/cm3)		(%)	(%)	(10-12m/V)
E6	100	5.1	09	1 : 1		900	5.85	1121	2.9	2.8	8.7	195
E7	100	5.1	0.9	1 : 1		950	5.90	1344	3.1	3.7	13.0	85
E8	100	5.1	0.9	1 : 1		1000	5.92	1405	3.9	5.2	17.8	44
E12	100	5.1	0.9	1 : 1	0.02	900	5.88	911	1.5	4.0	10.1	298
E13	100	5.1	0.9	1 : 1	002	920	5.86	920	3.5	3.1	17.7	232
E14	100	5.1	0.9	1 : 1	0.02	940	5.92	921	2.5	2.8	16.9	298
E15	100	4.3	0.7	1 : 1	002	960	5.91	937	3.5	3.4	18.3	201
E16	100	4.3	0.7	1 : 1	0.02	980	5.91	984	2.5	2.8	16.9	279
E17	100	4.3	0.7	1 : 1	0.02	1000	5.94	921	3.1	4.8	16.4	298
E18	100	5.1	0.9	1 : 1	0.1	900	5.89	1398	3.7	5.6	18.9	131
E19	100	5.1	0.9	1 : 1	0.1	920	5.87	1395	3.2	69	19.7	109
E20	100	5.1	0.9	1 : 1	0.1	940	5.88	1336	3.1	76	18.0	136

Table 1 0

	Main Component	Sub- Component (weight Parts)		Bi2O3 : CuO	MnO Weight Parts	Sintering Temperature	Density	Dielectric Constant ε	Dielectric Loss tanδ	Electromechanical Coupling Factor (k31)	Piezoelectric Constant (d31)	Mechanical quality Constant (Qm)
	BaTiO3	Bi2O3	CuO	Molar Ratio		°C	(g/cm3)		(%)	(%)	(10-12m/lV)
E21	100	4.3	0.7	1 : 1	0.1	960	5.93	1304	3.9	7.8	19.1	117
E22	100	4.3	0.7	1 : 1	0.1	980	5.94	1273	3.6	8.1	19.6	102
E23	100	4.3	0.7	1 : 1	0.1	1000	5.98	1116	3.1	8.2	19.2	102
E24	100	5.1	0.9	1 : 1	0.15	900	5.97	1430	5.7	3.6	8.9	71
E25	100	5.1	0.9	1 : 1	0.2	900	5.99	1552	6.2	2.9	10.1	70
E26	100	5.1	0.9	1 : 1	0.15	940	5.97	1496	5.1	3.6	8.4	70
E27	100	5.1	0.9	1 : 1	0.2	940	5.98	1430	6.9	2.8	9.4	61
E28	100	5.1	0.9	1 : 1	0.15	1000	5.94	1304	5.6	4.1	9.7	40
E29	100	5.1	0.9	1 : 1	0.2	1000	5.93	1336	6.1	3.2	10.1	49

Table 11

	Main Component	Sub-Component (weight Parts)		Bi2O3 : CuO	Li2CO3 Weight Parts	Sintering Temperature	Density	Dielectric Constant ε	Dielectric Loss tanδ	Electromechanical Coupling Factor (k31)	Piezoelectric Constant (d31)	Mechanical quality Constant (Qm)
	BaTiO3	Bi2O3	CuO	Molar Ratio		° C	(g/cm3)		(%)	(%)	(10-12m/V)
E30	100	5.1	0.9	1 : 1	0.05	900	5.98	890	0.6	8.1	16.9	279
E31	100	5.1	0.9	1 : 1	0.1	900	5.98	838	0.6	12.1	24.8	216
E32	100	5.1	0.9	1 : 1	0.05	940	5.99	822	1.5	13.6	25.7	201
E33	100	4.3	0.7	1 : 1	0.1	940	5.95	835	1.6	14.4	27.7	174
E34	100	4.3	0.7	1 : 1	0.05	1000	5.94	869	1.8	14.0	29.7	151
E35	100	4.3	0.7	1 : 1	0.1	1000	5.99	834	1.5	14.6	30.0	169
E36	100	5.1	0.9	1 : 1	0.2	900	5.91	1203	6.6	6.2	17.2	272
E37	100	5.1	0.9	1 : 1	0.3	900	5.96	1029	7.8	4.7	11.6	333
E38	100	5.1	0.9	1 : 1	0.2	940	5.95	1136	6.5	7.3	19.0	373
E39	100	4.3	0.7	1 : 1	0.3	940	5.97	1148	7.6	7.1	18.9	369
E40	100	4.3	0.7	1 : 1	0.2	1000	5.96	1183	6.8	8.0	21.0	358
E41	100	4.3	0.7	1 : 1	0.3	1000	5.99	1148	7.5	7.2	19.3	302

[0071] As is apparent from Tables 9, 10 and 11, the dielectric porcelain composition of the present invention can provide compact porcelains which show relatively high dielectric constant by firing in a low temperature area of 900 to 1000°C. Further, a piezoelectric constant of an unprecedented high level can be ensured as lead-free porcelain obtained by firing at 1000°C or lower.

[0072] It was found from Samples E12 to E29 that the piezoelectric constant can be further enhanced by controlling the ratio of MnO to 0.1 part by weight or less.

[0073] Further, it was found from Samples E30 to E41 that the piezoelectric constant can be further enhanced by controlling the ratio of Li₂CO₃ to 0.05 to 0.10 part by weight.

[0074] While specific preferred embodiments have been shown and described, the present invention is never limited by these specific embodiments, and can be carried out with various modifications and substitutions without departing from the scope of the claims thereof.

Claims

1. A method of manufacturing a dielectric porcelain, the method including the step of sintering a ceramic composition comprising:

(A) 100 parts by weight of a barium titanate-based dielectric material selected from the group consisting of:

(i) barium titanate;

(ii) barium titanate with up to 30 mol % or less of the barium substituted by strontium, calcium or magnesium;

(iii) barium titanate with up to 30 mol % or less of the titanium substituted by zirconium; and

(iv) barium titanate with up to 30 mol % or less of the barium substituted by strontium, calcium or magnesium and with up to 30 mol % or less of the titanium substituted by zirconium,

and

(B) 4 to 10 parts by weight in total of Bi₂O₃ and CuO as subcomponents, wherein the molar ratio of CuO to Bi₂O₃ ranges from 1.5:1.0 to 1.0:5.0, and wherein the Bi₂O₃ and CuO are added as:

(a) Bi₂O₃ and CuO;

(b) CuBi₂O₄ ; or

(c) Bi₂O₃, CuO and CuBi₂O₄,

wherein the ceramic composition contains substantially no glass component and wherein the composition is sintered at a temperature of 900 to 1000°C.

2. A method according to claim 1, wherein 0 to 30 mol% of the barium titanate in (A)(i) is substituted with at least one component selected from the group consisting of SrTiO₃, CaTiO3, MgTiO₃ and BaZrO₃.

3. A method according to claim 1 or claim 2, wherein at least one component selected from the group consisting of ZnO, Nb₂O₅ and MnO is added to the ceramic composition in an amount of 0.1 part by weight or more and 1.5 parts by weight or less.

4. A method according to claim 3, wherein MnO is added in an amount of 0.02 part by weight or more and 0.2 part by weight or less.

5. A method according to claim 4, wherein lithium is added in an amount of 0.05 part by weight or more and 0.3 part by weight or less in terms of Li₂CO₃.

6. Use of a dielectric porcelain manufactured by the method of any one of claims 1 to 5 as an electronic part.

7. Use according to claim 6 wherein the electronic part comprises the dielectric porcelain and a conductive film comprising a material selected from the group consisting of Ag, Cu and Ag-Pd alloy.

Ansprüche

1. Verfahren zur Herstellung eines dielektrischen Porzellans, wobei das Verfahren den Schritt des Sinterns einer Keramikzusammensetzung umfasst, die Folgendes umfasst:

(A) 100 Gewichtsteile eines aus der aus

(i) Bariumtitanat;

(ii) Bariumtitanat, wobei bis zu 30 Mol-% oder weniger des Bariums durch Strontium, Calcium oder Magnesium substituiert ist;

(iii) Bariumtitanat, wobei bis zu 30 Mol-% oder weniger des Titans durch Zirconium substituiert ist; und

(iv) Bariumtitanat, wobei bis zu 30 Mol-% oder weniger des Bariums durch Strontium, Calcium oder Magnesium substituiert ist und bis zu 30 Mol-% oder weniger des Titans durch Zirconium substituiert ist,

bestehenden Gruppe ausgewählten dielektrischen Materials auf Bariumtitanatbasis
und

(B) insgesamt 4 bis 10 Gewichtsteile von Bi₂O₃ und CuO als Subkomponenten, worin das Molverhältnis zwischen CuO und Bi₂O₃ von 1,5:1,0 bis 1,0:5,0 reicht und worin Bi₂O₃ und CuO wie folgt zugesetzt werden:

(a) als Bi₂O₃ und CuO;

(b) als CuBi₂O₄; oder

(c) als Bi₂O₃, CuO und CuBi₂O₄,

worin die Keramikzusammensetzung im Wesentlichen keine Glaskomponente umfasst und worin die Zusammensetzung bei einer Temperatur von 900 bis 1000 °C gesintert wird.

2. Verfahren nach Anspruch 1, worin 0 bis 30 Mol-% des Bariumtitanats in (A) (i) durch zumindest eine aus der aus SrTiO₃ CaTiO₃ MgTiO₃ und BaZrO₃ bestehenden Gruppe ausgewählte Komponente substituiert ist.

3. Verfahren nach Anspruch 1 oder Anspruch 2, worin zumindest eine aus der aus ZnO, Nb₂O₅ und MnO bestehenden Gruppe ausgewählte Komponente in einer Menge von 0,1 Gewichtsteilen oder mehr bzw. 1,5 Gewichtsteilen oder weniger zugesetzt wird.

4. Verfahren nach Anspruch 3, worin MnO in einer Menge von 0,02 Gewichtsteilen oder mehr bzw. 0,2 Gewichtsteilen oder weniger zugesetzt wird.

5. Verfahren nach Anspruch 4, worin Lithium in einer Menge von im Sinne von Li₂CO₃ 0,05 Gewichtsteilen oder mehr bzw. 0,3 Gewichtsteilen oder weniger zugesetzt wird.

6. Verwendung eines dielektrischen Porzellans, das durch ein Verfahren nach einem der Ansprüche 1 bis 5 hergestellt ist, als elektronisches Bauteil.

7. Verwendung nach Anspruch 6, worin das elektronische Bauteil das dielektrische Porzellan und einen leitfähigen Film umfasst, der ein aus der aus Ag, Cu und Ag-Pd-Legierung bestehenden Gruppe ausgewähltes Material umfasst.

Revendications

1. Procédé pour fabriquer une porcelaine diélectrique, le procédé comprenant l'étape consistant à fritter une composition de céramique comprenant :

(A) 100 parties en poids d'un matériau diélectrique à base de titanate de baryum choisi dans le groupe constitué par:

(i) le titanate de baryum ;

(ii) du titanate de baryum dont jusqu'à 30 % en moles ou moins du baryum sont remplacés par du strontium, du calcium ou du magnésium ;

(iii) du titanate de baryum dont jusqu'à 30 % en moles ou moins du titane sont remplacés par du zirconium ; et

(iv) du titanate de baryum dont jusqu'à 30 % en moles ou moins du baryum sont remplacés par du strontium, du calcium ou du magnésium, et dont jusqu'à 30 % en moles ou moins du titane sont remplacés par du zirconium, et

(B) 4 à 10 parties en poids au total de Bi₂O₃ et de CuO en tant que composants secondaires, le rapport molaire du CuO au Bi₂O₃ étant situé dans la plage allant de 1,5/1,0 à 1,0/5,0, et le Bi₂O₃ et le CuO étant ajoutés sous forme de :

(a) Bi₂O₃ et CuO ;

(b) CuBi₂O₄ ; ou

(c) Bi₂O₃, CuO et CuBi₂O₄,

dans lequel la composition de céramique ne contient pratiquement pas de composant de verre, et dans lequel la composition est frittée à une température de 900 à 1000°C.

2. Procédé selon la revendication 1, dans lequel 0 à 30 % en moles du titanate de baryum dans (A)(i) sont remplacés par au moins un composant choisi dans le groupe constitué par SrTiO₃, CaTiO₃, MgTiO₃ et BaZrO₃.

3. Procédé selon la revendication 1 ou la revendication 2, dans lequel au moins un composant choisi dans le groupe constitué par ZnO, Nb₂O₅ et MnO est ajouté à la composition de céramique en une quantité de 0,1 partie en poids ou plus et de 1,5 parties en poids ou moins.

4. Procédé selon la revendication 3, dans lequel du MnO est ajouté en une quantité de 0,02 partie en poids ou plus et de 0,2 partie en poids ou moins.

5. Procédé selon la revendication 4, dans lequel du lithium est ajouté en une quantité de 0,05 partie en poids ou plus et de 0,3 partie en poids ou moins en termes de Li₂CO₃.

6. Utilisation d'une porcelaine diélectrique fabriquée par le procédé de l'une quelconque des revendications 1 à 5 en tant que pièce électronique.

7. Utilisation selon la revendication 6, dans laquelle la pièce électronique comprend la porcelaine diélectrique et un film conducteur comprenant un matériau choisi dans le groupe constitué par Ag, Cu, et un alliage Ag-Pd.

Drawing