SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE MEMORY CELL WITH A SUPERLATTICE CHANNEL AND ASSOCIATED METHODS - Patent 2016624

(19)

(11)

EP 2 016 624 A1

(12)

(43)	Date of publication:
	21.01.2009 Bulletin 2009/04

(21)	Application number: 07761833.8

(22)	Date of filing: 03.05.2007

(51)

International Patent Classification (IPC):

H01L 29/788^(2006.01)
H01L 29/15^(2006.01)

H01L 27/115^(2006.01)

(86)	International application number:
	PCT/US2007/068155

(87)	International publication number:
	WO 2007/131117 (15.11.2007 Gazette 2007/46)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
	Designated Extension States:
	AL BA HR MK RS

(30)

Priority:

05.05.2006 US 381787
05.05.2006 US 381794

(71)	Applicant: Mears Technologies, Inc.
	Waltham, MA 02451 (US)

(72)	Inventors:
	KREPS, Scott A. Waltham, MA 02451 (US) RAO, Kalipatnam Vivek Grafton, Massachusetts 01519 (US)

(74)	Representative: Ferreccio, Rinaldo
	c/o Botti & Ferrari S.r.l. Via Locatelli 5 20124 Milano 20124 Milano (IT)

(54)	SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE MEMORY CELL WITH A SUPERLATTICE CHANNEL AND ASSOCIATED METHODS