(19)
(11) EP 2 024 532 A2

(12)

(88) Date of publication A3:
21.02.2008

(43) Date of publication:
18.02.2009 Bulletin 2009/08

(21) Application number: 07797890.6

(22) Date of filing: 30.05.2007
(51) International Patent Classification (IPC): 
C23C 16/40(2006.01)
(86) International application number:
PCT/US2007/069999
(87) International publication number:
WO 2007/140424 (06.12.2007 Gazette 2007/49)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK RS

(30) Priority: 30.05.2006 US 803483 P
29.05.2007 US 754440

(71) Applicant: APPLIED MATERIALS, INC.
Santa Clara, CA 95052 (US)

(72) Inventors:
  • INGLE, Nitin, K.
    Santa Clara, CA 95051 (US)
  • YUAN, Zheng
    Fremont, CA 94539 (US)
  • GEE, Paul
    San Jose, CA 95123 (US)
  • SAPRE, Kedar
    Mountain View, CA 94041 (US)

(74) Representative: Zimmermann & Partner et al
Postfach 330 920
80069 München
80069 München (DE)

   


(54) CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN