A NOVEL DEPOSITION-PLASMA CURE CYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE - Patent 2036120

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EP 2 036 120 A2

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(88)	Date of publication A3:
	28.08.2008

(43)	Date of publication:
	18.03.2009 Bulletin 2009/12

(21)	Application number: 07784191.4

(22)	Date of filing: 29.05.2007

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International Patent Classification (IPC):

H01L 21/302^(2006.01)

(86)	International application number:
	PCT/US2007/069899

(87)	International publication number:
	WO 2007/140377 (06.12.2007 Gazette 2007/49)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
	Designated Extension States:
	AL BA HR MK RS

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Priority:

30.05.2006 US 803481 P
25.05.2007 US 753968

(71)	Applicant: APPLIED MATERIALS, INC.
	Santa Clara, CA 95052 (US)

(72)	Inventors:
	CHEN, Xiaolin San Jose, CA 95131 (US) NEMANI, Srinivas, D. Sunnyvale, CA 94087 (US) VENKATARAMAN, Shankar Santa Clara, CA 95051 (US)

(74)	Representative: Zimmermann & Partner
	Isartorplatz 1 80331 München 80331 München (DE)

(54)	A NOVEL DEPOSITION-PLASMA CURE CYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE