(19)
(11) EP 2 051 291 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
29.06.2011 Bulletin 2011/26

(43) Date of publication A2:
22.04.2009 Bulletin 2009/17

(21) Application number: 08000340.3

(22) Date of filing: 10.01.2008
(51) International Patent Classification (IPC): 
H01L 21/329(2006.01)
H01L 29/739(2006.01)
H01L 29/868(2006.01)
 H01L 29/36(2006.01)
H01L 29/861(2006.01)
H01L 29/88(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated Extension States:
AL BA MK RS

(30) Priority: 09.03.2007 US 684261

(71) Applicant: Diodes Fabtech Inc.
Lee's Summit MO 64086 (US)

(72) Inventors:
  • Hamerski, Roman J.
    Overland Park Kansas 66085 (US)
  • Chen, Zerui
    Surrey, British Columbia, V4N 1V2 (CA)
  • Hong, James Man-Fai
    San Leandro California 94577 (US)
  • Chiem, Johnny Duc Van
    Camarillo California 93012 (US)
  • Hruska, Christopher D.
    Blue Springs Missouri 64015 (US)
  • Eastman, Timothy
    Lee's Summit Missouri 64063 (US)

(74) Representative: Manasse, Uwe 
Forrester & Boehmert Pettenkoferstrasse 20-22
80336 München
80336 München (DE)

   


(54) High efficiency rectifier


(57) A high-efficiency power semiconductor rectifier device (10) comprising a δP++ layer (12), a P-body (14), an N-drift region (16), an N+ substrate (18), an anode (20), and a cathode (22). The method of fabricating the device (10) comprises the steps of depositing the N-drift region (16) on the N+ substrate (18), implanting boron into the N-drift region (16) to create a P-body region (14), forming a layer of titanium silicide (56) on the P-body region (14), and concentrating a portion of the implanted boron at the interface region between the layer of titanium silicide (56) and the P-body region (14) to create the 5P++ layer (12) of supersaturated P-doped silicon.







Search report