(19)
(11) EP 2 057 683 A2

(12)

(88) Date of publication A3:
02.05.2008

(43) Date of publication:
13.05.2009 Bulletin 2009/20

(21) Application number: 07840799.6

(22) Date of filing: 08.08.2007
(51) International Patent Classification (IPC): 
H01L 27/11(2006.01)
(86) International application number:
PCT/US2007/075520
(87) International publication number:
WO 2008/021911 (21.02.2008 Gazette 2008/08)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK RS

(30) Priority: 08.08.2006 US 836343 P
08.08.2006 US 836437 P
28.08.2006 US 840586 P
27.10.2006 US 855109 P
16.03.2007 US 918388 P

(71) Applicant: Nantero, Inc.
Woburn, MA 01801 (US)

(72) Inventors:
  • BERTIN, Claude, L.
    South Burlington, VT 05403 (US)
  • HUANG, X. M., Henry
    Woburn, MA 01801 (US)
  • RUECKES, Thomas
    Rockport, MA 01966 (US)
  • SIVARAJAN, Ramesh
    Shrewsbury, MA 01545 (US)

(74) Representative: Benson, Christopher 
Harrison Goddard Foote Fountain Precinct Balm Green
Sheffield, South Yorkshire S1 2JA
Sheffield, South Yorkshire S1 2JA (GB)

   


(54) MEMORY ELEMENTS AND CROSS POINT SWITCHES AND ARRAYS OF SAME USING NONVOLATILE NANOTUBE BLOCKS