(19)
(11) EP 2 073 276 B8

(12) CORRECTED EUROPEAN PATENT SPECIFICATION
Note: Bibliography reflects the latest situation

(15) Correction information:
Corrected version no 1 (W1 B1)

(48) Corrigendum issued on:
06.03.2019 Bulletin 2019/10

(45) Mention of the grant of the patent:
21.11.2018 Bulletin 2018/47

(21) Application number: 08021551.0

(22) Date of filing: 11.12.2008
(51) International Patent Classification (IPC): 
H01L 31/0687(2012.01)
H01L 31/0304(2006.01)
 H01L 31/0693(2012.01)
H01L 31/18(2006.01)

(54)

EXPONENTIALLY DOPED LAYERS IN INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS

EXPONENTIELL DOTIERTE SCHICHTEN IN INVERTIERTEN METAMORPHEN MEHRFACHSOLARZELLEN

COUCHES DOPÉES DE MANIÈRE EXPONENTIELLE DANS DES CELLULES SOLAIRES MULTI-JONCTIONS MÉTAMORPHIQUES INVERSÉES

(84) Designated Contracting States:
DE FR IT

(30) Priority: 13.12.2007 US 956069

(43) Date of publication of application:
24.06.2009 Bulletin 2009/26

(73) Proprietor: SolAero Technologies Corp.
Albuquerque, NM 87123 (US)

(72) Inventors:
  • Stan, Mark A
    Albuquerque NM 87122 (US)
  • Cornfeld, Arthur
    Sandia Park NM 87074 (US)
  • Ley, Vance
    Albuquerque, NM 87123 (US)

(74) Representative: adares Patent- und Rechtsanwälte Reininger & Partner GmbB 
Tauentzienstraße 7 b/c
10789 Berlin
10789 Berlin (DE)


(56) References cited: : 
EP-A2- 1 863 099
 US-A1- 2004 166 681
   
  • CHUNG B C ET AL: "HIGH-EFFICIENCY ALGAAS SOLAR CELLS GROWN BY METALORGANIC VAPOR PHASE EPITAXY", PHOTOVOLTAIC SPECIALISTS CONFERENCE. LAS VEGAS, SEPT. 26 - 30, 1988; [PHOTOVOLTAIC SPECIALISTS CONFERENCE], NEW YORK, IEEE, US, vol. 1, 26 September 1988 (1988-09-26), pages 486-490, XP000166691,
  • H. C. HAMAKER: "Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar-cell devices", JOURNAL OF APPLIED PHYSICS, vol. 58, no. 6, 1 January 1985 (1985-01-01), page 2344, XP55033201, ISSN: 0021-8979, DOI: 10.1063/1.335957
  • R.J. SOUKUP ET AL: "Limitations of built-in electric field enhancement of minority carrier current collection in GaAs backwall schottky barrier solar cells", SOLAR CELLS, vol. 18, no. 2, 1 August 1986 (1986-08-01) , pages 139-151, XP55033145, ISSN: 0379-6787, DOI: 10.1016/0379-6787(86)90032-3
  • KHAN Z R ET AL: "New expression for base transit time in an exponentially doped base bipolar transistor for all levels of injection", MICROELECTRONICS, 2003. ICM 2003. PROCEEDINGS OF THE 15TH INTERNATIONA L CONFERENCE ON CAIRO, EGYPT DEC. 9-11, 2003, PISCATAWAY, NJ, USA,IEEE, 9 December 2003 (2003-12-09), pages 340-343, XP010697485, ISBN: 978-977-05-2010-9
  • STREIT D C ET AL: "Effect of exponentially graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistors", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 12, no. 5, 1 May 1991 (1991-05-01), pages 194-196, XP011406118, ISSN: 0741-3106, DOI: 10.1109/55.79553
   
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