(19)
(11) EP 2 074 649 A2

(12)

(88) Date of publication A3:
03.07.2008

(43) Date of publication:
01.07.2009 Bulletin 2009/27

(21) Application number: 07826550.1

(22) Date of filing: 26.09.2007
(51) International Patent Classification (IPC): 
H01L 21/336(2006.01)
G11C 16/04(2006.01)
H01L 27/115(2006.01)
H01L 29/788(2006.01)
H01L 29/792(2006.01)
H01L 21/8247(2006.01)
H01L 21/28(2006.01)
(86) International application number:
PCT/IB2007/053911
(87) International publication number:
WO 2008/038236 (03.04.2008 Gazette 2008/14)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated Extension States:
AL BA HR MK RS

(30) Priority: 29.09.2006 EP 06121535

(71) Applicant: NXP B.V.
5656 AG Eindhoven (NL)

(72) Inventors:
  • SLOTBOOM, Michiel
    5656 AG Eindhoven (NL)
  • VAN DUUREN, Michiel J.
    5656 AG Eindhoven (NL)
  • AKIL, Nader
    5656 AG Eindhoven (NL)
  • VAN SCHAIJK, Robertus T.F.
    5656 AG Eindhoven (NL)
  • HUERTA, Almudena
    5656 AG Eindhoven (NL)

(74) Representative: Röggla, Harald et al
NXP Semiconductors Intellectual Property Department Gutheil-Schoder-Gasse 8-12
1101 Vienna
1101 Vienna (AT)

   


(54) A MULTI-TRANSISTOR BASED NON-VOLATILE MEMORY CELL WITH DUAL THRESHOLD VOLTAGE