ATBECHDEDKESFRGBGRITLILUNLSEMCPTIESILTLVFIROMKCYALTRBGCZEEHUPLSKBAHRIS..MT..RS..*XDIM360 Ver 2.15 (14 Jul 2008) - 1100000/02074649A220090701EP07826550.12007092620090429enenen0612153520060929EP2009070120092720090701200927H01L 21/336 20060101AFI20080423BHEP H01L 29/792 20060101ALI20080423BHEP G11C 16/04 20060101ALI20080423BHEP H01L 21/8247 20060101ALI20080423BHEP H01L 27/115 20060101ALI20080423BHEP H01L 21/28 20060101ALI20080423BHEP H01L 29/788 20060101ALI20080423BHEP deNICHT FLÜCHTIGE SPEICHERZELLE MIT DOPPELSCHWELLENSPANNUNG AUF BASIS MEHRERER TRANSISTORENenA MULTI-TRANSISTOR BASED NON-VOLATILE MEMORY CELL WITH DUAL THRESHOLD VOLTAGEfrCELLULE DE MÉMOIRE NON VOLATILE À PLUSIEURS TRANSISTORS DOTÉE D'UNE TENSION DE SEUIL DOUBLENXP B.V.08244220005536EP2High Tech Campus 605656 AG EindhovenNLSLOTBOOM, MichielNXP Semiconductors IP Department HTC 60 1.31 Prof Holstlaan 45656 AG EindhovenNLVAN DUUREN, Michiel J.NXP Semiconductors IP Department HTC 60 1.31 Prof Holstlaan 45656 AG EindhovenNLAKIL, NaderNXP Semiconductors IP Department HTC 60 1.31 Prof Holstlaan 45656 AG EindhovenNLVAN SCHAIJK, Robertus T.F.NXP Semiconductors IP Department HTC 60 1.31 Prof Holstlaan 45656 AG EindhovenNLHUERTA, AlmudenaNXP Semiconductors IP Department HTC 60 1.31 Prof Holstlaan 45656 AG EindhovenNLRöggla, Haraldet al09252151NXP Semiconductors Intellectual Property Department Gutheil-Schoder-Gasse 8-121101 ViennaATATBEBGCHCYCZDEDKEEESFIFRGBGRHUIEISITLILTLULVMCMTNLPLPTROSESISKTRAL20090429BA20090429HR20090429MK20090429RS20090429IB200705391120070926enWO20080382362008040320081420080703000000