COMPOSITION COMPRISING NEOPENTASILANE AND METHOD OF PREPARING SAME

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EP 2 076 558 B8

(12)	CORRECTED EUROPEAN PATENT SPECIFICATION
	Note: Bibliography reflects the latest situation

(15)	Correction information:
	Corrected version no 1 (W1 B1)

(48)	Corrigendum issued on:
	01.08.2018 Bulletin 2018/31

(45)	Mention of the grant of the patent:
	18.04.2018 Bulletin 2018/16

(21)	Application number: 07811642.3

(22)	Date of filing: 29.08.2007

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International Patent Classification (IPC):

C08G 77/00^(2006.01)

C07F 7/02^(2006.01)

(86)	International application number:
	PCT/US2007/019165

(87)	International publication number:
	WO 2008/051328 (02.05.2008 Gazette 2008/18)

(54)	COMPOSITION COMPRISING NEOPENTASILANE AND METHOD OF PREPARING SAME NEOPENTASILAN ENTHALTENDE ZUSAMMENSETZUNG UND HERSTELLUNGSVERFAHREN DAFÜR COMPOSITION COMPRENANT DU NÉOPENTASILANE ET PROCÉDÉ DE PRÉPARATION

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

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Priority:

24.10.2006 US 853958 P

(43)	Date of publication of application:
	08.07.2009 Bulletin 2009/28

(73)	Proprietor: Dow Silicones Corporation
	Midland, MI 48686-0994 (US)

(72)	Inventors:
	CANNADY, John Patrick Midland, MI 48642 (US) ZHOU, Xiaobing Midland, MI 48642 (US)

(74)	Representative: Gillard, Richard Edward et al
	Elkington and Fife LLP Thavies Inn House 3-4 Holborn Circus London EC1N 2HA London EC1N 2HA (GB)

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References cited: :

WO-A-2004/036631

J.C. STURM ET AL: "Chemical Vapor Deposition Epitaxy of Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane"[Online] XP002464465 Princeton Institute of Science and Technology of Materials (PRISM) and Department of Electrical Engineering , Princeton University Princeton, NJ and Applied Materials, Santa Clara ,CA . Retrieved from the Internet: URL:http://www.princeton.edu/~sturmlab/pdf s/publications/CP.249.pdf> [retrieved on 2008-01-14]
K H CHUNG, J C STURM, E SANCHEZ ,K K SINGH AND S KUPPUARO: "The high growth rate of epitaxial silicon-carbon alloys by using chemical vapour deposition and neopentasilane" SEMICOND.SCI .TECHNOL. (2007), vol. 22, 7 December 2006 (2006-12-07), pages 158-160, XP002464466 Princeton Institute of Science and Technology of Materials (PRISM) and Department of Electrical Engineering, Princeton University , Princeton NJ, Applied Materials Santa Clara, CA
F. HÖFLER, R. JANNACH: "ZUR KENNTNIS DES NEOPENTASILANS", INORG. NUCL. CHEM. LETTERS, vol. 9, 1973, pages 723-725,
Robert Freund: "Neuer Aspekte zur basenkatalysierten Polykondesation von Silanen und zur präparativen Chemie der Silane und Silyl-Anionen", 1973, Inaugural-Dissertation, Köln pages 142-155,
KACZMARCZYC A ET AL: "The preparation and some properties of a new pentasilicon dodecachloride, Si5Cl12", JOURNAL OF INORGANIC AND NUCLEAR CHEMISTRY, PERGAMON PRESS, GB, vol. 26, 1 January 1964 (1964-01-01), pages 421-425, XP002628233, ISSN: 0022-1902

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