P-I-N DIODE CRYSTALLIZED ADJACENT TO A SILICIDE IN SERIES WITH A DIELECTRIC ANTIFUSE AND METHODS OF FORMING THE SAME - Patent 2092562

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EP 2 092 562 A2

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(88)	Date of publication A3:
	24.07.2008

(43)	Date of publication:
	26.08.2009 Bulletin 2009/35

(21)	Application number: 07840040.5

(22)	Date of filing: 13.11.2007

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International Patent Classification (IPC):

H01L 27/102^(2006.01)

(86)	International application number:
	PCT/US2007/023855

(87)	International publication number:
	WO 2008/060543 (22.05.2008 Gazette 2008/21)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

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Priority:

15.11.2006 US 560283
15.11.2006 US 560289

(71)	Applicant: Sandisk 3D LLC
	Milpitas, CA 95035 (US)

(72)	Inventor:
	HERNER, S. Brad San Jose, CA 95125 (US)

(74)	Representative: Hitchcock, Esmond Antony
	Marks & Clerk LLP 90 Long Acre London WC2E 9RA London WC2E 9RA (GB)

(54)	P-I-N DIODE CRYSTALLIZED ADJACENT TO A SILICIDE IN SERIES WITH A DIELECTRIC ANTIFUSE AND METHODS OF FORMING THE SAME