DEPLETION-MODE MOSFET CIRCUIT AND APPLICATIONS - Patent 2109890

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EP 2 109 890 A2

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(88)	Date of publication A3:
	16.10.2008

(43)	Date of publication:
	21.10.2009 Bulletin 2009/43

(21)	Application number: 08728213.3

(22)	Date of filing: 24.01.2008

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International Patent Classification (IPC):

H01L 27/088^(2006.01)

(86)	International application number:
	PCT/US2008/051913

(87)	International publication number:
	WO 2008/092004 (31.07.2008 Gazette 2008/31)

(84)	Designated Contracting States:
	AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

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Priority:

24.01.2007 US 886363 P

(71)	Applicant: Keystone Semiconductor, Inc.
	Spring House, PA 19477 (US)

(72)	Inventor:
	LIN, Went, T. Ambler, PA 19002 (US)

(74)	Representative: Simons, Alison et al
	Dummett Copp 25 The Square Martlesham Heath Ipswich, Suffolk, IP5 3SL Ipswich, Suffolk, IP5 3SL (GB)

(54)	DEPLETION-MODE MOSFET CIRCUIT AND APPLICATIONS