(19)
(11) EP 2 146 250 A8

(12) CORRECTED EUROPEAN PATENT APPLICATION
published in accordance with Art. 153(4) EPC

(15) Correction information:
Corrected version no 1 (W1 A1)

(48) Corrigendum issued on:
03.03.2010 Bulletin 2010/09

(43) Date of publication:
20.01.2010 Bulletin 2010/03

(21) Application number: 08752271.0

(22) Date of filing: 01.05.2008
(51) International Patent Classification (IPC): 
G03F 7/40(2006.01)
H01L 21/027(2006.01)
(86) International application number:
PCT/JP2008/058341
(87) International publication number:
WO 2008/136499 (13.11.2008 Gazette 2008/46)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

(30) Priority: 01.05.2007 JP 2007120833

(71) Applicant: AZ Electronic Materials USA Corp.
Somerville, New Jersey 08876 (US)

(72) Inventors:
  • HONG, Sung-Eun
    Somerville, New Jersey 08876 (US)
  • TAKANO, Yusuke
    Kakegawa-shi Shizuoka 437-1412 (JP)
  • KANG, Wen-Bing
    Kakegawa-shi Shizuoka 437-1412 (JP)

(74) Representative: Rippel, Hans Christoph 
Isenbruck Bösl Hörschler Wichmann LLP Eastsite One Seckenheimer Landstrasse 4
68163 Mannheim
68163 Mannheim (DE)

   


(54) WATER-SOLUBLE RESIN COMPOSITION FOR THE FORMATION OF MICROPATTERNS AND PROCESS FOR THE FORMATION OF MICROPATTERNS WITH THE SAME


(57) A process which comprises applying a water-soluble resin composition comprising a water-soluble vinyl resin, a compound having at least two amino groups in the molecule, a solvent, and, if necessary, an additive such as a surfactant on a resist pattern (2) formed on a substrate (1) to form a water-soluble resin film (3), modifying part of the water-soluble resin film adjacent to the resist pattern through mixing to form a water-insolubilized layer (4) which cannot be removed by water washing on the surface of the resist pattern, and removing unmodified part of the water-soluble resin film by water washing and which enables the effective scale-down of separation size and hole opening size of a resist pattern to a level finer than the limit of resolution of the wave length of exposure. It is preferable to use as the water-soluble vinyl resin a homopolymer of a nitrogen-containing vinyl monomer such as acrylamine, vinylpyrrolidone or vinylimidazole, a copolymer of two or more nitrogen-containing vinyl monomers, or a copolymer of at least one nitrogen-containing vinyl monomer and at least one nitrogen-free vinyl monomer.