(19)
(11) EP 2 151 299 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
19.06.2013 Bulletin 2013/25

(43) Date of publication A2:
10.02.2010 Bulletin 2010/06

(21) Application number: 09154680.4

(22) Date of filing: 09.03.2009
(51) International Patent Classification (IPC): 
B24B 37/04(2012.01)
 B24D 3/32(2006.01)
(84) Designated Contracting States:
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR
Designated Extension States:
AL BA RS

(30) Priority: 05.08.2008 US 221581

(71) Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
Newark, DE 19713 (US)

(72) Inventors:
  • Kulp, Mary Jo
    Newark, DE 19711 (US)
  • Crkvenac, T. Todd
    Hockessin, DE 19707 (US)

(74) Representative: Kent, Venetia Katherine 
Patent Outsourcing Limited 1 King Street
Bakewell Derbyshire DE45 1DZ
Bakewell Derbyshire DE45 1DZ (GB)

   


(54) Chemical mechanical polishing pad


(57) The polishing pad is for polishing patterned semiconductor substrates. The pad includes a polymeric matrix and hollow polymeric particles within the polymeric matrix. The polymeric matrix is a polyurethane reaction product of a curative agent and an isocyanate-terminated polytetramethylene ether glycol at an NH2 to NCO stoichiometric ratio of 80 to 97 percent. The isocyanate-terminated polytetramethylene ether glycol has an unreacted NCO range of 8.75 to 9.05 weight percent. The hollow polymeric particles having an average diameter of 2 to 50 µm and a wt%b and densityb of constituents forming the polishing pad as follows:


where densitya equals an average density of 60 g/l, where densityb is an average density of 5 g/l to 500g/l, where wt%a is 3.25 to 4.25 wt%. The polishing pad has a porosity of 30 to 60 percent by volume; and a closed cell structure within the polymeric matrix forms a continuous network surrounding the closed cell structure.





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